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This article is cited in 6 scientific papers (total in 6 papers)
Semiconductor structures, low-dimensional systems, quantum phenomena
Multilayer photosensitive structures based on porous silicon and rare-earth-element compounds: Study of spectral characteristics
N. Yu. Kirsanova, N. V. Latukhinaa, D. A. Lizunkovaa, G. A. Rogozhinaa, M. V. Stepikhovab a Samara National Research University
b Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
Abstract:
The spectral characteristics of the specular reflectance, photosensitivity, and photoluminescence (PL) of multilayer structures based on porous silicon with rare-earth-element (REE) ions are investigated. It is shown that the photosensitivity of these structures in the wavelength range of 0.4–1.0 $\mu$m is higher than in structures free of REEs. The structures with Er$^{3+}$ ions exhibit a luminescence response at room temperature in the spectral range from 1.1 to 1.7 $\mu$m. The PL spectrum of the erbium impurity is characterized by a fine line structure, which is determined by the splitting of the $^{4}I_{15/2}$ multiplet of the Er$^{3+}$ ion. It is shown that the structures with a porous layer on the working surface have a much lower reflectance in the entire spectral range under study (0.2–1.0 $\mu$m).
Received: 26.07.2016 Accepted: 12.09.2016
Citation:
N. Yu. Kirsanov, N. V. Latukhina, D. A. Lizunkova, G. A. Rogozhina, M. V. Stepikhova, “Multilayer photosensitive structures based on porous silicon and rare-earth-element compounds: Study of spectral characteristics”, Fizika i Tekhnika Poluprovodnikov, 51:3 (2017), 367–371; Semiconductors, 51:3 (2017), 353–356
Linking options:
https://www.mathnet.ru/eng/phts6211 https://www.mathnet.ru/eng/phts/v51/i3/p367
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