Fizika i Tekhnika Poluprovodnikov
RUS  ENG    JOURNALS   PEOPLE   ORGANISATIONS   CONFERENCES   SEMINARS   VIDEO LIBRARY   PACKAGE AMSBIB  
General information
Latest issue
Archive

Search papers
Search references

RSS
Latest issue
Current issues
Archive issues
What is RSS



Fizika i Tekhnika Poluprovodnikov:
Year:
Volume:
Issue:
Page:
Find






Personal entry:
Login:
Password:
Save password
Enter
Forgotten password?
Register


Fizika i Tekhnika Poluprovodnikov, 2017, Volume 51, Issue 3, Pages 367–371
DOI: https://doi.org/10.21883/FTP.2017.03.44209.8377
(Mi phts6211)
 

This article is cited in 6 scientific papers (total in 6 papers)

Semiconductor structures, low-dimensional systems, quantum phenomena

Multilayer photosensitive structures based on porous silicon and rare-earth-element compounds: Study of spectral characteristics

N. Yu. Kirsanova, N. V. Latukhinaa, D. A. Lizunkovaa, G. A. Rogozhinaa, M. V. Stepikhovab

a Samara National Research University
b Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
Abstract: The spectral characteristics of the specular reflectance, photosensitivity, and photoluminescence (PL) of multilayer structures based on porous silicon with rare-earth-element (REE) ions are investigated. It is shown that the photosensitivity of these structures in the wavelength range of 0.4–1.0 $\mu$m is higher than in structures free of REEs. The structures with Er$^{3+}$ ions exhibit a luminescence response at room temperature in the spectral range from 1.1 to 1.7 $\mu$m. The PL spectrum of the erbium impurity is characterized by a fine line structure, which is determined by the splitting of the $^{4}I_{15/2}$ multiplet of the Er$^{3+}$ ion. It is shown that the structures with a porous layer on the working surface have a much lower reflectance in the entire spectral range under study (0.2–1.0 $\mu$m).
Received: 26.07.2016
Accepted: 12.09.2016
English version:
Semiconductors, 2017, Volume 51, Issue 3, Pages 353–356
DOI: https://doi.org/10.1134/S1063782617030101
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: N. Yu. Kirsanov, N. V. Latukhina, D. A. Lizunkova, G. A. Rogozhina, M. V. Stepikhova, “Multilayer photosensitive structures based on porous silicon and rare-earth-element compounds: Study of spectral characteristics”, Fizika i Tekhnika Poluprovodnikov, 51:3 (2017), 367–371; Semiconductors, 51:3 (2017), 353–356
Citation in format AMSBIB
\Bibitem{KirLatLiz17}
\by N.~Yu.~Kirsanov, N.~V.~Latukhina, D.~A.~Lizunkova, G.~A.~Rogozhina, M.~V.~Stepikhova
\paper Multilayer photosensitive structures based on porous silicon and rare-earth-element compounds: Study of spectral characteristics
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2017
\vol 51
\issue 3
\pages 367--371
\mathnet{http://mi.mathnet.ru/phts6211}
\crossref{https://doi.org/10.21883/FTP.2017.03.44209.8377}
\elib{https://elibrary.ru/item.asp?id=29006029}
\transl
\jour Semiconductors
\yr 2017
\vol 51
\issue 3
\pages 353--356
\crossref{https://doi.org/10.1134/S1063782617030101}
Linking options:
  • https://www.mathnet.ru/eng/phts6211
  • https://www.mathnet.ru/eng/phts/v51/i3/p367
  • This publication is cited in the following 6 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
    Statistics & downloads:
    Abstract page:47
    Full-text PDF :28
     
      Contact us:
     Terms of Use  Registration to the website  Logotypes © Steklov Mathematical Institute RAS, 2024