|
Fizika i Tekhnika Poluprovodnikov, 2016, Volume 50, Issue 3, Pages 350–353
(Mi phts6515)
|
|
|
|
This article is cited in 4 scientific papers (total in 4 papers)
Semiconductor structures, low-dimensional systems, quantum phenomena
Epitaxially grown monoisotopic Si, Ge, and Si$_{1-x}$Ge$_{x}$ alloy layers: production and some properties
A. P. Detochenkoa, S. A. Denisovab, M. N. Drozdovb, A. I. Mashina, V. A. Gavvac, A. D. Bulanovac, A. V. Nezhdanova, A. A. Ezhevskiia, M. V. Stepikhovaab, V. Yu. Chalkova, V. N. Trushina, D. V. Shengurovab, V. G. Shengurova, N. V. Abrosimovd, H. Riemannd a Lobachevsky State University of Nizhny Novgorod
b Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
c Institute of Chemistry of High-Purity Substances RAS, Nizhnii Novgorod
d Leibniz Institute for Crystal Growth, Berlin, Germany
Abstract:
The technology of the growth of Si, Ge, and Si$_{1-x}$Ge$_{x}$ layers by molecular-beam epitaxy with the use of a sublimation source of monoisotopic $^{30}$Si or $^{28}$Si and/or gas sources of monogermane $^{74}$GeH$_{4}$ is demonstrated. All of the epitaxial layers are of high crystal quality. The secondary-ion mass spectroscopy data and Raman data suggest the high isotopic purity and structural perfection of the $^{30}$Si, $^{28}$Si, $^{74}$Ge, and $^{30}$Si$_{1-x}^{74}$Ge$_{x}$ layers. The $^{30}$Si layers doped with Er exhibit an efficient photoluminescence signal.
Keywords:
Epitaxial Layer, $^{30}$Si Layer, Alloy Layer, Silicon Isotope, Monogermane.
Received: 09.09.2015 Accepted: 09.09.2015
Citation:
A. P. Detochenko, S. A. Denisov, M. N. Drozdov, A. I. Mashin, V. A. Gavva, A. D. Bulanov, A. V. Nezhdanov, A. A. Ezhevskii, M. V. Stepikhova, V. Yu. Chalkov, V. N. Trushin, D. V. Shengurov, V. G. Shengurov, N. V. Abrosimov, H. Riemann, “Epitaxially grown monoisotopic Si, Ge, and Si$_{1-x}$Ge$_{x}$ alloy layers: production and some properties”, Fizika i Tekhnika Poluprovodnikov, 50:3 (2016), 350–353; Semiconductors, 50:3 (2016), 345–348
Linking options:
https://www.mathnet.ru/eng/phts6515 https://www.mathnet.ru/eng/phts/v50/i3/p350
|
Statistics & downloads: |
Abstract page: | 32 | Full-text PDF : | 9 |
|