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Fizika i Tekhnika Poluprovodnikov, 2021, Volume 55, Issue 12, Pages 1210–1215
DOI: https://doi.org/10.21883/FTP.2021.12.51707.9722 (Mi phts4918) 		 
This article is cited in 2 scientific papers (total in 2 papers)

Semiconductor structures, low-dimensional systems, quantum phenomena

Dependence of luminescence properties of the ordered groups of epitaxially grown Ge(Si) nanoislands on the parameters of pit-patterned SOI substrate

Zh. V. Smaginaa, V. A. Zinov'eva, M. V. Stepikhovab, A. V. Peretokinbc, S. A. Dyakovd, E. E. Rodyakinaae, A. V. Novikovbc, A. V. Dvurechenskiiae

a Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
b Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
c Lobachevsky State University of Nizhny Novgorod
d Skolkovo Institute of Science and Technology
e Novosibirsk State University
Full-text PDF (1416 kB) Citations (2)
DOI: https://doi.org/10.21883/FTP.2021.12.51707.9722
Abstract: This paper presents the results of studies of the luminescence properties of structures with Ge(Si) quantum dots (QDs), in which a pit-patterned surface of silicon on insulator substrate served both for the spatial ordering of QDs and for the formation of a two-dimensional photonic crystal. It is shown that by choosing the parameters of pit-patterned substrate (the diameter of the pits and the period of their location), it is possible to provide a significant increase of intensity of the QD luminescence signal in the near-IR range. This enhancement is associated with interaction of spatially ordered QD emission with the modes of a photonic crystal formed by the pattern of pits. The effect of amplification of the luminescence signal persists up to room temperature.
Keywords: Ge(Si) nanoislands, quantum dots, spatial ordering, luminescence, photonic crystal.
Funding agency Grant number
Russian Science Foundation 21-72-20184
Received: 24.07.2021
Revised: 02.08.2021
Accepted: 02.08.2021
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: Zh. V. Smagina, V. A. Zinov'ev, M. V. Stepikhova, A. V. Peretokin, S. A. Dyakov, E. E. Rodyakina, A. V. Novikov, A. V. Dvurechenskii, “Dependence of luminescence properties of the ordered groups of epitaxially grown Ge(Si) nanoislands on the parameters of pit-patterned SOI substrate”, Fizika i Tekhnika Poluprovodnikov, 55:12 (2021), 1210–1215
Citation in format AMSBIB
\Bibitem{SmaZinSte21}
\by Zh.~V.~Smagina, V.~A.~Zinov'ev, M.~V.~Stepikhova, A.~V.~Peretokin, S.~A.~Dyakov, E.~E.~Rodyakina, A.~V.~Novikov, A.~V.~Dvurechenskii
\paper Dependence of luminescence properties of the ordered groups of epitaxially grown Ge(Si) nanoislands on the parameters of pit-patterned SOI substrate
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2021
\vol 55
\issue 12
\pages 1210--1215
\mathnet{http://mi.mathnet.ru/phts4918}
\crossref{https://doi.org/10.21883/FTP.2021.12.51707.9722}
\elib{https://elibrary.ru/item.asp?id=46667392}
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  • https://www.mathnet.ru/eng/phts/v55/i12/p1210
    • This publication is cited in the following 2 articles:
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