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Fizika i Tekhnika Poluprovodnikov, 2018, Volume 52, Issue 9, Pages 1028–1033
DOI: https://doi.org/10.21883/FTP.2018.09.46151.8841 (Mi phts5734) 		 
This article is cited in 7 scientific papers (total in 7 papers)

Semiconductor structures, low-dimensional systems, quantum phenomena

Study of the structural and emission properties of Ge(Si) quantum dots ordered on the Si(001) surface

Zh. V. Smaginaa, V. A. Zinovyeva, G. K. Krivyakinab, E. E. Rodyakinaab, P. A. Kuchinskayaa, B. I. Fomina, A. N. Yablonskiic, M. V. Stepikhovac, A. V. Novikovc, A. V. Dvurechenskiiab

a Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
b Novosibirsk State University
c Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
Full-text PDF (920 kB) Citations (7)
DOI: https://doi.org/10.21883/FTP.2018.09.46151.8841
Abstract: A method for creation of Ge/Si structures with space-arranged nanoislands by heteroepitaxy on the pre-patterned Si(001) substrates with a square grid of the etched pits is developed. The influence of depth and inter-pit spacing on the nucleation and growth of Ge(Si) nanoislands is studied. It is shown, that the nanoislands are formed either inside pits or at their periphery depending on the pit depth. It is found that the size of the nanoislands grown inside the pits goes up with the increase of the inter-pit distance from 1 to 4 $\mu$m. The pronounced photoluminescence signal related with the space-arranged arrays of quantum dots with a period of 1 $\mu$m is observed in the range of energies from 0.9 to 1.0 eV.
Keywords: Nanoislands, Wetting Layer, Cavity Nucleation, Unpatterned Surface, Micro-photoluminescence Measurements.
Received: 08.02.2018
Accepted: 15.02.2018
English version:
Semiconductors, 2018, Volume 52, Issue 9, Pages 1150–1155
DOI: https://doi.org/10.1134/S1063782618090191
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: Zh. V. Smagina, V. A. Zinovyev, G. K. Krivyakin, E. E. Rodyakina, P. A. Kuchinskaya, B. I. Fomin, A. N. Yablonskii, M. V. Stepikhova, A. V. Novikov, A. V. Dvurechenskii, “Study of the structural and emission properties of Ge(Si) quantum dots ordered on the Si(001) surface”, Fizika i Tekhnika Poluprovodnikov, 52:9 (2018), 1028–1033; Semiconductors, 52:9 (2018), 1150–1155
Citation in format AMSBIB
\Bibitem{SmaZinKri18}
\by Zh.~V.~Smagina, V.~A.~Zinovyev, G.~K.~Krivyakin, E.~E.~Rodyakina, P.~A.~Kuchinskaya, B.~I.~Fomin, A.~N.~Yablonskii, M.~V.~Stepikhova, A.~V.~Novikov, A.~V.~Dvurechenskii
\paper Study of the structural and emission properties of Ge(Si) quantum dots ordered on the Si(001) surface
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2018
\vol 52
\issue 9
\pages 1028--1033
\mathnet{http://mi.mathnet.ru/phts5734}
\crossref{https://doi.org/10.21883/FTP.2018.09.46151.8841}
\elib{https://elibrary.ru/item.asp?id=36903547}
\transl
\jour Semiconductors
\yr 2018
\vol 52
\issue 9
\pages 1150--1155
\crossref{https://doi.org/10.1134/S1063782618090191}
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    • This publication is cited in the following 7 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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