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Publications in Math-Net.Ru |
Citations |
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2021 |
| 1. |
S. A. Kukushkin, Sh. Sh. Sharofidinov, A. V. Osipov, A. S. Grashchenko, A. V. Kandakov, E. V. Osipova, K. P. Kotlyar, E. V. Ubyivovk, “Self-organization of the composition of Al$_{x}$Ga$_{1-x}$N films grown on hybrid SiC/Si substrates”, Fizika Tverdogo Tela, 63:3 (2021), 363–369   ; Phys. Solid State, 63:3 (2021), 442–448 |
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| 2. |
I. P. Sotnikov, K. P. Kotlyar, R. R. Reznik, V. O. Gridchin, V. V. Lendyashova, A. V. Vershinin, V. V. Lysak, D. A. Kirilenko, N. A. Bert, G. E. Cirlin, “Specific features of structural stresses in InGaN/GaN nanowires”, Fizika i Tekhnika Poluprovodnikov, 55:9 (2021), 785–788 ; Semiconductors, 55:10 (2021), 795–798 |
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| 3. |
I. V. Ilkiv, K. P. Kotlyar, D. A. Kirilenko, A. V. Osipov, I. P. Sotnikov, A. N. Terpitsky, G. E. Cirlin, “Formation of hexagonal germanium on AlGaAs nanowire surfaces by molecular-beam epitaxy”, Fizika i Tekhnika Poluprovodnikov, 55:8 (2021), 621–624 ; Semiconductors, 55:8 (2021), 678–681 |
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| 4. |
V. O. Gridchin, R. R. Reznik, K. P. Kotlyar, A. S. Dragunova, N. V. Kryzhanovskaya, A. Yu. Serov, S. A. Kukushkin, G. E. Cirlin, “MBE growth of InGaN nanowires on SiC/Si(111) and Si(111) substrates”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:21 (2021), 32–35 |
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| 5. |
R. R. Reznik, K. M. Morozov, I. L. Krestnikov, K. P. Kotlyar, I. P. Sotnikov, L. Leandro, N. Akopian, G. E. Cirlin, “Directional radiation from GaAs quantum dots in AlGaAs nanowires”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:8 (2021), 47–50 ; Tech. Phys. Lett., 47:5 (2021), 405–408 |
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2020 |
| 6. |
A. S. Kulagina, A. I. Khrebtov, A. A. Ryzhov, V. V. Danilov, I. V. Shtrom, K. P. Kotlyar, P. A. Alekseev, A. N. Smirnov, R. R. Reznik, G. E. Cirlin, “Nonlinear bleaching of InAs nanowires in the visible range”, Optics and Spectroscopy, 128:1 (2020), 128–133 ; Optics and Spectroscopy, 128:1 (2020), 125–130 |
| 7. |
R. R. Reznik, V. O. Gridchin, K. P. Kotlyar, N. V. Kryzhanovskaya, S. V. Morozov, G. E. Cirlin, “Synthesis of morphologically developed ingan nanostructures on silicon: influence of the substrate temperature on the morphological and optical properties”, Fizika i Tekhnika Poluprovodnikov, 54:9 (2020), 884–887 ; Semiconductors, 54:9 (2020), 1075–1077 |
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| 8. |
V. O. Gridchin, K. P. Kotlyar, R. R. Reznik, L. N. Dvoretskaya, A. V. Parfeneva, I. S. Mukhin, G. E. Cirlin, “Selective-area growth of GaN nanowires on patterned SiO$_{x}$/Si substrates by molecular beam epitaxy”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:21 (2020), 32–35 ; Tech. Phys. Lett., 46:11 (2020), 1080–1083 |
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2019 |
| 9. |
A. V. Redkov, A. S. Grashchenko, S. A. Kukushkin, A. V. Osipov, K. P. Kotlyar, A. I. Lihachev, A. V. Nashchekin, I. P. Soshnikov, “Studying evolution of the ensemble of micropores in a SiC/Si structure during its growth by the method of atom substitution”, Fizika Tverdogo Tela, 61:3 (2019), 433–440 ; Phys. Solid State, 61:3 (2019), 299–306 |
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| 10. |
R. R. Reznik, K. P. Kotlyar, N. V. Kryzhanovskaya, S. V. Morozov, G. E. Cirlin, “Synthesis by molecular beam epitaxy and properties of InGaN nanostructures of branched morphology on a silicon substrate”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:21 (2019), 48–50 ; Tech. Phys. Lett., 45:11 (2019), 1111–1113 |
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2018 |
| 11. |
N. V. Sibirev, K. P. Kotlyar, A. A. Koryakin, I. V. Shtrom, E. V. Ubyivovk, I. P. Soshnikov, R. R. Reznik, A. D. Bouravlev, G. E. Cirlin, “Solar cell based on core/shell nanowires”, Fizika i Tekhnika Poluprovodnikov, 52:12 (2018), 1464–1468 ; Semiconductors, 52:12 (2018), 1568–1572 |
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| 12. |
R. R. Reznik, K. P. Kotlyar, I. V. Ilkiv, I. P. Soshnikov, S. P. Lebedev, A. A. Lebedev, D. A. Kirilenko, P. A. Alekseev, G. E. Cirlin, “MBE growth and structural properties of GaP and InP nanowires on a SiC substrate with a graphene layer”, Fizika i Tekhnika Poluprovodnikov, 52:11 (2018), 1317–1320 ; Semiconductors, 52:11 (2018), 1428–1431 |
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| 13. |
G. E. Cirlin, R. R. Reznik, Yu. B. Samsonenko, A. I. Khrebtov, K. P. Kotlyar, I. V. Ilkiv, I. P. Sotnikov, D. A. Kirilenko, N. V. Kryzhanovskaya, “Phosphorus-based nanowires grown by molecular-beam epitaxy on silicon”, Fizika i Tekhnika Poluprovodnikov, 52:11 (2018), 1304–1307 ; Semiconductors, 52:11 (2018), 1416–1419 |
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| 14. |
R. R. Reznik, K. P. Kotlyar, I. P. Soshnikov, S. A. Kukushkin, A. V. Osipov, G. E. Cirlin, “MBE growth and structural properties of InAs and InGaAs nanowires with different mole fraction of In on Si and strongly mismatched SiC/Si(111) substrates”, Fizika i Tekhnika Poluprovodnikov, 52:5 (2018), 522 ; Semiconductors, 52:5 (2018), 651–653 |
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| 15. |
I. P. Soshnikov, K. P. Kotlyar, N. A. Bert, D. A. Kirilenko, A. D. Bouravlev, G. E. Cirlin, “The features of GaAs nanowire SEM images”, Fizika i Tekhnika Poluprovodnikov, 52:5 (2018), 510 ; Semiconductors, 52:5 (2018), 605–608 |
| 16. |
Ya. V. Lubyanskiy, A. D. Bondarev, I. P. Sotnikov, N. A. Bert, V. V. Zolotarev, D. A. Kirilenko, K. P. Kotlyar, N. A. Pikhtin, I. S. Tarasov, “Oxygen nitrogen mixture effect on aluminum nitride synthesis by reactive ion plasma deposition”, Fizika i Tekhnika Poluprovodnikov, 52:2 (2018), 196–200 ; Semiconductors, 52:2 (2018), 184–188 |
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2017 |
| 17. |
R. R. Reznik, K. P. Kotlyar, I. V. Shtrom, I. P. Sotnikov, S. A. Kukushkin, A. V. Osipov, G. E. Cirlin, “MBE growth of ultrathin III–V nanowires on a highly mismatched SiC/Si(111) substrate”, Fizika i Tekhnika Poluprovodnikov, 51:11 (2017), 1525–1529 ; Semiconductors, 51:11 (2017), 1472–1476 |
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2016 |
| 18. |
I. P. Sotnikov, A. A. Semenov, P. Yu. Belyavskii, I. V. Shtrom, K. P. Kotlyar, V. V. Lisak, D. A. Kudriashov, S. I. Pavlov, A. V. Nashchekin, G. E. Cirlin, “Fabrication of the structures with autocatalytic CdTe nanowires using magnetron sputtering deposition”, Fizika Tverdogo Tela, 58:12 (2016), 2314–2318 ; Phys. Solid State, 58:12 (2016), 2401–2405 |
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| 19. |
R. R. Reznik, K. P. Kotlyar, I. V. Ilkiv, I. P. Soshnikov, S. A. Kukushkin, A. V. Osipov, E. V. Nikitina, G. E. Cirlin, “Growth and optical properties of filamentary GaN nanocrystals grown on a hybrid SiC/Si(111) substrate by molecular beam epitaxy”, Fizika Tverdogo Tela, 58:10 (2016), 1886–1889 ; Phys. Solid State, 58:10 (2016), 1952–1955 |
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