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Publications in Math-Net.Ru |
Citations |
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2021 |
| 1. |
A. V. Malevskaya, N. D. Il'inskaya, N. A. Kalyuzhnyy, D. A. Malevskii, Yu. M. Zadiranov, P. V. Pokrovskii, A. A. Blokhin, A. V. Andreeva, “Investigation of methods for texturing light-emitting diodes based on AlGaAs/GaAs heterostructures”, Fizika i Tekhnika Poluprovodnikov, 55:11 (2021), 1086–1090   |
| 2. |
E. V. Kunitsyna, A. A. Pivovarova, I. A. Andreev, G. G. Konovalov, E. V. Ivanov, N. D. Il'inskaya, Yu. P. Yakovlev, “Uncooled photodiodes for detecting pulsed infrared radiation in the spectral range of 0.9–1.8 $\mu$m”, Fizika i Tekhnika Poluprovodnikov, 55:7 (2021), 607–613 ; Semiconductors, 55:7 (2021), 601–607 |
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| 3. |
P. A. Ivanov, N. M. Lebedeva, N. D. Il'inskaya, T. P. Samsonova, O. I. Kon'kov, “High-voltage 4$H$-SiC based avalanche diodes with a negative beve”, Fizika i Tekhnika Poluprovodnikov, 55:4 (2021), 349–353 ; Semiconductors, 55:4 (2021), 405–409 |
| 4. |
P. A. Ivanov, N. M. Lebedeva, N. D. Il'inskaya, M. F. Kudoyarov, T. P. Samsonova, O. I. Kon'kov, Yu. M. Zadiranov, “High-voltage 4$H$-SiC Schottky diodes with field-plate edge termination”, Fizika i Tekhnika Poluprovodnikov, 55:2 (2021), 188–194 ; Semiconductors, 55:2 (2021), 243–249 |
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| 5. |
P. A. Ivanov, M. F. Kudoyarov, N. M. Lebedeva, N. D. Il'inskaya, T. P. Samsonova, “High-voltage avalanche 4$H$-SiC diodes with a protective semi-insulating area”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:6 (2021), 48–50 ; Tech. Phys. Lett., 47:3 (2021), 275–277 |
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| 6. |
A. V. Malevskaya, Yu. M. Zadiranov, D. A. Malevskii, P. V. Pokrovskii, N. D. Il'inskaya, V. M. Andreev, “Plasmachemical and wet etching in the postgrowth technology of solar cells based on the GaInP/GaInAs/Ge heterostructure”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:3 (2021), 14–17 ; Tech. Phys. Lett., 47:2 (2021), 114–117 |
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2020 |
| 7. |
N. M. Lebedeva, T. P. Samsonova, N. D. Il'inskaya, S. I. Troshkov, P. A. Ivanov, “Formation of SiC mesastructures with gently sloping sidewalls by dry selective etching through a photoresist mask”, Zhurnal Tekhnicheskoi Fiziki, 90:6 (2020), 997–1000 ; Tech. Phys., 65:6 (2020), 957–960 |
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| 8. |
E. V. Kunitsyna, M. A. Royz, I. A. Andreev, E. A. Grebenshchikova, A. A. Pivovarova, M. Ahmetoglu (Afrailov), E. V. Lebiadok, R. Yu. Mikulich, N. D. Il'inskaya, Yu. P. Yakovlev, “Photodiodes for detecting the emission of quantum-sized disk lasers operating on whispering gallery modes (2.2 – 2.3 $\mu$m)”, Fizika i Tekhnika Poluprovodnikov, 54:7 (2020), 677–683 ; Semiconductors, 54:7 (2020), 796–802 |
| 9. |
N. M. Lebedeva, N. D. Il'inskaya, P. A. Ivanov, “Edge-termination technique for high-voltage mesa-structure 4$H$-SiC devices: negative beveling”, Fizika i Tekhnika Poluprovodnikov, 54:2 (2020), 207–211 ; Semiconductors, 54:2 (2020), 258–262 |
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| 10. |
N. D. Il'inskaya, N. M. Lebedeva, Yu. M. Zadiranov, P. A. Ivanov, T. P. Samsonova, O. I. Kon'kov, A. S. Potapov, “Micro-profiling of 4$H$-SiC by dry etching to form a Schottky barrier diode”, Fizika i Tekhnika Poluprovodnikov, 54:1 (2020), 97–102 ; Semiconductors, 54:1 (2020), 144–149 |
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2019 |
| 11. |
V. V. Romanov, I. A. Belykh, E. V. Ivanov, P. A. Alekseev, N. D. Il'inskaya, Yu. P. Yakovlev, “Light–emitting diodes based on asymmetrical double InAs/InAsSb/InAsSbP heterostructure for CO$_{2}$ ($\lambda$ = 4.3 $\mu$m) and CO ($\lambda$ = 4.7 $\mu$m) detection”, Fizika i Tekhnika Poluprovodnikov, 53:6 (2019), 832–838 ; Semiconductors, 53:6 (2019), 822–827 |
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| 12. |
A. V. Malevskaya, N. D. Il'inskaya, V. M. Andreev, “Development of methods for liquid etching of a separation mesa-structure in creating multijunction solar cells”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:24 (2019), 14–16 ; Tech. Phys. Lett., 45:12 (2019), 1230–1232 |
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2018 |
| 13. |
A. V. Babichev, G. A. Gusev, A. N. Sofronov, D. A. Firsov, L. E. Vorob'ev, A. A. Usikova, Yu. M. Zadiranov, N. D. Il'inskaya, V. N. Nevedomskiy, V. V. Dyudelev, G. S. Sokolovskii, A. G. Gladyshev, L. Ya. Karachinsky, I. I. Novikov, A. Yu. Egorov, “Lasing in 9.6-$\mu$m quantum cascade lasers”, Zhurnal Tekhnicheskoi Fiziki, 88:10 (2018), 1559–1563 ; Tech. Phys., 63:10 (2018), 1511–1515 |
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| 14. |
A. V. Malevskaya, V. S. Kalinovskii, N. D. Il'inskaya, D. A. Malevskii, E. V. Kontrosh, M. Z. Shvarts, V. M. Andreev, “Influence of the ohmic contact structure on the performance of GaAs/AlGaAs photovoltaic converters”, Zhurnal Tekhnicheskoi Fiziki, 88:8 (2018), 1211–1215 ; Tech. Phys., 63:8 (2018), 1177–1181 |
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| 15. |
N. D. Il'inskaya, S. A. Karandashov, A. A. Lavrov, B. A. Matveev, M. A. Remennyi, N. M. Stus, A. A. Usikova, “InAsSbP photodiodes for 2.6–2.8-$\mu$m wavelengths”, Zhurnal Tekhnicheskoi Fiziki, 88:2 (2018), 234–237 ; Tech. Phys., 63:2 (2018), 226–229 |
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| 16. |
V. V. Mamutin, N. D. Il'inskaya, A. A. Usikova, A. V. Lyutetskiy, “Ridge waveguide structure for lattice-matched quantum cascade lasers”, Fizika i Tekhnika Poluprovodnikov, 52:12 (2018), 1499–1502 ; Semiconductors, 52:12 (2018), 1603–1606 |
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| 17. |
E. V. Kunitsyna, I. A. Andreev, G. G. Konovalov, E. V. Ivanov, A. A. Pivovarova, N. D. Il'inskaya, Yu. P. Yakovlev, “GaSb/GaAlAsSb heterostructure photodiodes for the near-IR spectral range”, Fizika i Tekhnika Poluprovodnikov, 52:9 (2018), 1094–1099 ; Semiconductors, 52:9 (2018), 1215–1220 |
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| 18. |
M. P. Mikhailova, I. A. Andreev, G. G. Konovalov, L. V. Danilov, E. V. Ivanov, E. V. Kunitsyna, N. D. Il'inskaya, R. V. Levin, B. V. Pushnii, Yu. P. Yakovlev, “Photoconductivity amplification in a type-II $n$-GaSb/InAs/$p$-GaSb heterostructure with a single QW”, Fizika i Tekhnika Poluprovodnikov, 52:8 (2018), 906–911 ; Semiconductors, 52:8 (2018), 1037–1042 |
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| 19. |
V. V. Mamutin, A. P. Vasil'ev, A. V. Lyutetskiy, N. D. Il'inskaya, Yu. M. Zadiranov, A. N. Sofronov, D. A. Firsov, L. E. Vorob'ev, N. A. Maleev, V. M. Ustinov, “On the fabrication and study of lattice-matched heterostructures for quantum cascade lasers”, Fizika i Tekhnika Poluprovodnikov, 52:7 (2018), 812–815 ; Semiconductors, 52:7 (2018), 950–953 |
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| 20. |
V. V. Mamutin, N. A. Maleev, A. P. Vasil'ev, N. D. Il'inskaya, Yu. M. Zadiranov, A. A. Usikova, M. A. Yagovkina, Yu. M. Shernyakov, V. M. Ustinov, “Investigation of the modified structure of a quantum cascade laser”, Fizika i Tekhnika Poluprovodnikov, 52:1 (2018), 133–137 ; Semiconductors, 52:1 (2018), 126–130 |
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| 21. |
V. V. Mamutin, A. P. Vasil'ev, A. V. Lyutetskiy, N. D. Il'inskaya, A. A. Usikova, Yu. M. Zadiranov, N. A. Maleev, A. N. Sofronov, D. A. Firsov, L. E. Vorob'ev, V. M. Ustinov, “Quantum-cascade lasers generating at the 4.8-$\mu$m wavelength at room temperature”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:18 (2018), 17–23 ; Tech. Phys. Lett., 44:9 (2018), 814–816 |
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| 22. |
M. S. Buyalo, I. M. Gadzhiev, N. D. Il'inskaya, A. A. Usikova, I. I. Novikov, L. Ya. Karachinsky, E. S. Kolodeznyi, V. E. Bugrov, A. Yu. Egorov, E. L. Portnoĭ, “Mode-locked lasers with “thin” quantum wells in 1.55 $\mu$m spectral range”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:4 (2018), 95–102 ; Tech. Phys. Lett., 44:2 (2018), 174–177 |
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2017 |
| 23. |
A. L. Zakhgeim, N. D. Il'inskaya, S. A. Karandashov, A. A. Lavrov, B. A. Matveev, M. A. Remennyi, N. M. Stus, A. A. Usikova, A. E. Chernyakov, “Spatial redistribution of radiation in flip-chip photodiodes based on InAsSbP/InAs double heterostructures”, Fizika i Tekhnika Poluprovodnikov, 51:2 (2017), 269–275 ; Semiconductors, 51:2 (2017), 260–266 |
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2016 |
| 24. |
I. V. Altukhov, S. E. Dizhur, M. S. Kagan, S. K. Paprotskiy, N. A. Khval'kovskii, A. D. Buravlev, A. P. Vasil'ev, Yu. M. Zadiranov, N. D. Il'inskaya, A. A. Usikova, V. M. Ustinov, “Effect of a terahertz cavity on the conductivity of short-period GaAs/AlAs superlattices”, Pis'ma v Zh. Èksper. Teoret. Fiz., 103:2 (2016), 128–131 ; JETP Letters, 103:2 (2016), 122–124   |
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| 25. |
I. M. Gadzhiev, M. S. Buyalo, A. E. Gubenko, A. Yu. Egorov, A. A. Usikova, N. D. Il'inskaya, A. V. Lyutetskiy, Yu. M. Zadiranov, E. L. Portnoĭ, “Switching between the mode-locking and Q-switching modes in two-section QW lasers upon a change in the absorber properties due to the Stark effect”, Fizika i Tekhnika Poluprovodnikov, 50:6 (2016), 843–847 ; Semiconductors, 50:6 (2016), 828–831 |
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| 26. |
N. D. Il'inskaya, S. A. Karandashov, N. G. Karpukhina, A. A. Lavrov, B. A. Matveev, M. A. Remennyi, N. M. Stus, A. A. Usikova, “Photodiode 1 $\times$ 64 linear array based on a double $p$-InAsSbP/$n$-InAs$_{0.92}$Sb$_{0.08}$/$n^{+}$-InAs heterostructure”, Fizika i Tekhnika Poluprovodnikov, 50:5 (2016), 657–662 ; Semiconductors, 50:5 (2016), 646–651 |
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1991 |
| 27. |
D. Z. Garbuzov, I. E. Berishev, Y. V. Ilin, N. D. Il'inskaya, A. V. Ovchinnikov, N. A. Pikhtin, N. L. Rassudov, I. S. Tarasov, “Совершенствование процесса заращивания и получение одномодовых
зарощенных InGaAsP/InP-лазеров ($\lambda=1.3$ мкм) с мощностью
излучения 160 мВт”, Fizika i Tekhnika Poluprovodnikov, 25:8 (1991), 1414–1418 |
| 28. |
D. Z. Garbuzov, I. E. Berishev, Y. V. Ilin, N. D. Il'inskaya, N. A. Pikhtin, A. V. Ovchinnikov, I. S. Tarasov, “GROWN SINGLE-MODE CONTINUOUS INGAASP/INP SEPARATE CONFINEMENT LASERS
WITH (LAMBDA = 1.3 MU-M)”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 17:6 (1991), 17–21 |
| 29. |
V. A. Dmitriev, L. B. Elfimov, N. D. Il'inskaya, S. V. Rendakova, “LOCAL EPITAXY OF SILICON-CARBIDE FROM LIQUID-PHASE”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 17:4 (1991), 77–80 |
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1990 |
| 30. |
A. T. Gorelenok, N. D. Il'inskaya, M. I. Kostina, E. S. Novikova, M. A. Panchenko, A. E. Petrov, “DIAGNOSTICS OF INGAASP/INP HETEROBOUNDARIES BY AUGER SHAPES OF SLANT
SECTIONS OBTAINED THROUGH CHEMICAL ETCHING”, Zhurnal Tekhnicheskoi Fiziki, 60:10 (1990), 177–180 |
| 31. |
V. I. Vasilev, N. D. Il'inskaya, D. V. Kuksenkov, V. I. Kuchinskii, V. A. Mishurnii, V. V. Sazonov, V. V. Smirnitskii, N. N. Faleev, “INJECTION HETEROLASERS WITH DISTRIBUTED FEEDBACK IN INGAASSB/GASB SYSTEM”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:2 (1990), 58–62 |
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1988 |
| 32. |
Z. I. Alferov, V. I. Bosyi, A. T. Gorelenok, A. V. Ivashchuk, N. D. Il'inskaya, M. N. Mizerov, I. A. Mokina, D. N. Rehviashvili, N. M. Shmidt, “SCHOTTKY BARRIERS AND INGAAS/INP-BASED FIELD TRANSISTORS”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:19 (1988), 1807–1810 |
| 33. |
V. A. Dmitriev, P. A. Ivanov, N. D. Il'inskaya, A. L. Sirkin, B. V. Tsarenkov, V. E. Chelnokov, A. E. Cherenkov, “HIGH-TEMPERATURE SIC-6H FIELD TRANSISTOR WITH THE P-N LOCKS”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:4 (1988), 289–293 |
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1987 |
| 34. |
D. Z. Garbuzov, S. V. Zaicev, N. D. Il'inskaya, V. I. Kolyshkin, A. V. Ovchinnikov, I. S. Tarasov, M. K. Trukan, “STUDY OF THE DURABILITY OF CONTINUOUS INGAASP/INP (LAMBDA=1.3 MU-M) MS
SEPARATE CONFINEMENT LASERS”, Zhurnal Tekhnicheskoi Fiziki, 57:9 (1987), 1822–1824 |
| 35. |
N. D. Il'inskaya, S. A. Nikishin, M. A. Sinicin, D. V. Sinyavskii, L. P. Sorokina, B. S. Yavich, “CURRENT CONTROL BY CROSS-SECTIONS OF THE THICKNESS AND CURRENT
DEOXIDATION OF LAYERS OF ALGAAS CULTIVATED IN GROOVES”, Zhurnal Tekhnicheskoi Fiziki, 57:4 (1987), 778–782 |
| 36. |
D. Z. Garbuzov, S. V. Zaitsev, N. D. Il'inskaya, K. Yu. Kizhaev, A. B. Nivin, A. V. Ovchinnikov, N. A. Strugov, I. S. Tarasov, “Power separate confinement $In\,Ga\,As\,P/In\,P$-based lasers for FOCD ($\lambda=1,55$ mu-m, $T=300$ K, $P=50$ mVt)”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:9 (1987), 535–537 |
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1985 |
| 37. |
A. T. Gorelenok, V. G. Gruzdov, T. V. Dekal'chuk, N. D. Il'inskaya, I. S. Tarasov, А. А. Dekalchyuk, I. A. Mokina, “MESA-STRIPE INGAASP/INP(LAMBDA=1.5MKM) LASERS OF CONTINUOUS ACTION”, Zhurnal Tekhnicheskoi Fiziki, 55:9 (1985), 1872–1876 |
| 38. |
V. M. Andreev, A. T. Gorelenok, V. G. Gruzdov, V. G. Danl'chenko, N. D. Il'inskaya, V. I. Korol'kov, N. M. Saradzhishvili, L. M. Fedorov, N. M. Shmidt, M. S. Bogbanovich, N. Z. Djingarev, L. B. Karlina, V. V. Mamutin, I. A. Mokina, “INVESTIGATION OF PIN-PHOTODIODES BASED ON INGAASP/INP”, Zhurnal Tekhnicheskoi Fiziki, 55:8 (1985), 1566–1569 |
| 39. |
Zh. I. Alferov, D. Z. Garbuzov, N. Yu. Daviduk, N. D. Il'inskaya, A. B. Nivin, A. V. Ovchinnikov, I. S. Tarasov, “High-power mesastrip PO $In\,Ga\,As/In\,P$ lasers for FOCD ($\lambda=1.3$ mu-m, $t=18^\circ$ C, $i=300$ mA, $p=28$ mVt in the fiber of $50\,\mu m$ diameter”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:22 (1985), 1345–1349 |
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1984 |
| 40. |
A. T. Gorelenok, V. G. Gruzdov, V. G. Danl'chenko, N. D. Il'inskaya, V. I. Korol'kov, V. V. Mamutin, I. A. Mokina, N. M. Saradzhishvili, T. S. Tabarov, N. M. Shmidt, “PHOTO-TRANSISTOR BASED ON N-P-N HETEROSTRUCTURES IN THE INP-INGAASP
SYSTEM”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 10:21 (1984), 1294–1297 |
| 41. |
D. Z. Garbuzov, V. G. Agafonov, N. Yu. Daviduk, M. K. Trukan, N. D. Il'inskaya, V. P. Chalyi, T. N. Drokina, “SPONTANEOUS END INGAASP/INP DHS-EMITTERS FOR THE 200 MKM IN DIAMETER FOC
(FIBER-OPTICAL COUPLER)”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 10:21 (1984), 1286–1290 |
| 42. |
Z. I. Alferov, K. A. Gatsoev, A. T. Gorelenok, N. D. Il'inskaya, I. S. Tarasov, “LOW-THRESHOLD MEZOBAND INGAASP/INP CONTINUOUS OPERATION LASERS”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 10:16 (1984), 961–964 |
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1983 |
| 43. |
D. Z. Garbuzov, K. A. Gatsoev, A. T. Gorelenok, A. G. Dzigasov, N. D. Il'inskaya, V. B. Khalfin, “FACE SPONTANEOUS EMITTERS BASED ON DHS (DOUBLE HETEROSTRUCTURES)
INGAASP(GAMMA-CONGRUENT-TO-1,3MKM) WITH ETA-B-CONGRUENT-TO-6-PERCENT AT
300K”, Zhurnal Tekhnicheskoi Fiziki, 53:7 (1983), 1408–1411 |
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