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Fizika i Tekhnika Poluprovodnikov, 2017, Volume 51, Issue 2, Pages 269–275
DOI: https://doi.org/10.21883/FTP.2017.02.44117.8380
(Mi phts6245)
 

This article is cited in 13 scientific papers (total in 13 papers)

Semiconductor physics

Spatial redistribution of radiation in flip-chip photodiodes based on InAsSbP/InAs double heterostructures

A. L. Zakhgeima, N. D. Il'inskayab, S. A. Karandashovb, A. A. Lavrovc, B. A. Matveevb, M. A. Remennyib, N. M. Stusb, A. A. Usikovab, A. E. Chernyakova

a Submicron Heterostructures for Microelectronics Research and Engineering Center, Russian Academy of Sciences, St. Petersburg
b Ioffe Institute, St. Petersburg
c IoffeLED Ltd., St. Petersburg
Abstract: The spatial distribution of equilibrium and nonequilibrium (including luminescent) IR (infrared) radiation in flip-chip photodiodes based on InAsSbP/InAs double heterostructures ($\lambda_{\operatorname{max}}$ = 3.4 $\mu$m) is measured and analyzed; the structural features of the photodiodes, including the reflective properties of the ohmic contacts, are taken into account. Optical area enhancement due to multiple internal reflection in photodiodes with different geometric characteristics is estimated.
Received: 26.07.2016
Accepted: 01.08.2016
English version:
Semiconductors, 2017, Volume 51, Issue 2, Pages 260–266
DOI: https://doi.org/10.1134/S1063782617020269
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: A. L. Zakhgeim, N. D. Il'inskaya, S. A. Karandashov, A. A. Lavrov, B. A. Matveev, M. A. Remennyi, N. M. Stus, A. A. Usikova, A. E. Chernyakov, “Spatial redistribution of radiation in flip-chip photodiodes based on InAsSbP/InAs double heterostructures”, Fizika i Tekhnika Poluprovodnikov, 51:2 (2017), 269–275; Semiconductors, 51:2 (2017), 260–266
Citation in format AMSBIB
\Bibitem{ZakIliKar17}
\by A.~L.~Zakhgeim, N.~D.~Il'inskaya, S.~A.~Karandashov, A.~A.~Lavrov, B.~A.~Matveev, M.~A.~Remennyi, N.~M.~Stus, A.~A.~Usikova, A.~E.~Chernyakov
\paper Spatial redistribution of radiation in flip-chip photodiodes based on InAsSbP/InAs double heterostructures
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2017
\vol 51
\issue 2
\pages 269--275
\mathnet{http://mi.mathnet.ru/phts6245}
\crossref{https://doi.org/10.21883/FTP.2017.02.44117.8380}
\elib{https://elibrary.ru/item.asp?id=29006010}
\transl
\jour Semiconductors
\yr 2017
\vol 51
\issue 2
\pages 260--266
\crossref{https://doi.org/10.1134/S1063782617020269}
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  • https://www.mathnet.ru/eng/phts/v51/i2/p269
  • This publication is cited in the following 13 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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    Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
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