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This article is cited in 13 scientific papers (total in 13 papers)
Semiconductor physics
Spatial redistribution of radiation in flip-chip photodiodes based on InAsSbP/InAs double heterostructures
A. L. Zakhgeima, N. D. Il'inskayab, S. A. Karandashovb, A. A. Lavrovc, B. A. Matveevb, M. A. Remennyib, N. M. Stusb, A. A. Usikovab, A. E. Chernyakova a Submicron Heterostructures for Microelectronics Research and Engineering Center, Russian Academy of Sciences, St. Petersburg
b Ioffe Institute, St. Petersburg
c IoffeLED Ltd., St. Petersburg
Abstract:
The spatial distribution of equilibrium and nonequilibrium (including luminescent) IR (infrared) radiation in flip-chip photodiodes based on InAsSbP/InAs double heterostructures ($\lambda_{\operatorname{max}}$ = 3.4 $\mu$m) is measured and analyzed; the structural features of the photodiodes, including the reflective properties of the ohmic contacts, are taken into account. Optical area enhancement due to multiple internal reflection in photodiodes with different geometric characteristics is estimated.
Received: 26.07.2016 Accepted: 01.08.2016
Citation:
A. L. Zakhgeim, N. D. Il'inskaya, S. A. Karandashov, A. A. Lavrov, B. A. Matveev, M. A. Remennyi, N. M. Stus, A. A. Usikova, A. E. Chernyakov, “Spatial redistribution of radiation in flip-chip photodiodes based on InAsSbP/InAs double heterostructures”, Fizika i Tekhnika Poluprovodnikov, 51:2 (2017), 269–275; Semiconductors, 51:2 (2017), 260–266
Linking options:
https://www.mathnet.ru/eng/phts6245 https://www.mathnet.ru/eng/phts/v51/i2/p269
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