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This article is cited in 7 scientific papers (total in 7 papers)
Solid-State Electronics
InAsSbP photodiodes for 2.6–2.8-$\mu$m wavelengths
N. D. Il'inskayaa, S. A. Karandashova, A. A. Lavrovab, B. A. Matveeva, M. A. Remennyia, N. M. Stusab, A. A. Usikovaa a Ioffe Institute, St. Petersburg
b IoffeLED Ltd., St. Petersburg
Abstract:
Research data for photovoltaic, I–V , and C–V characteristics of InAsSbP/InAs heterostructure photodiodes that operate at room temperature in the wavelength range 2.6–2.8 $\mu$m have been reported. Based on these data and available publications, conclusions have been drawn about the prospects for using these photodiodes in a number of applications.
Received: 01.06.2017
Citation:
N. D. Il'inskaya, S. A. Karandashov, A. A. Lavrov, B. A. Matveev, M. A. Remennyi, N. M. Stus, A. A. Usikova, “InAsSbP photodiodes for 2.6–2.8-$\mu$m wavelengths”, Zhurnal Tekhnicheskoi Fiziki, 88:2 (2018), 234–237; Tech. Phys., 63:2 (2018), 226–229
Linking options:
https://www.mathnet.ru/eng/jtf5995 https://www.mathnet.ru/eng/jtf/v88/i2/p234
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Abstract page: | 31 | Full-text PDF : | 16 |
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