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This article is cited in 4 scientific papers (total in 4 papers)
Semiconductor physics
GaSb/GaAlAsSb heterostructure photodiodes for the near-IR spectral range
E. V. Kunitsyna, I. A. Andreev, G. G. Konovalov, E. V. Ivanov, A. A. Pivovarova, N. D. Il'inskaya, Yu. P. Yakovlev Ioffe Institute, St. Petersburg
Abstract:
GaSb/GaAlAsSb uncooled photodiodes for the 1.1–1.85 $\mu$m spectral range are fabricated and studied. A unique method for the growth of GaSb from lead solution-melts makes it possible to obtain a low carrier concentration in the active region: $n$ = 2 $\times$ 10$^{15}$ cm$^{-3}$. The capacitance of the photodiodes is 70–110 pF for a sensitive -area diameter of 300 $\mu$m and 150–250 pF for a diameter of 500 $\mu$m. The photodiodes are characterized by a high (for GaSb devices) spectral sensitivity $S_\lambda$ = 0.95 A/W at the maximum, a relatively low reverse dark current density $j$ = (4–9) $\times$ 10$^{-3}$ A/cm$^2$ at $U_{\operatorname{rev}}$ = 1.0–2.0 V, and high-speed performance (response time 5–10 ns).
Keywords:
Heterostructure Photodiodes, Reverse Dark Current, Sensitive Area Diameter, Tunneling Component, Front Ohmic Contact.
Received: 29.01.2017 Accepted: 05.02.2017
Citation:
E. V. Kunitsyna, I. A. Andreev, G. G. Konovalov, E. V. Ivanov, A. A. Pivovarova, N. D. Il'inskaya, Yu. P. Yakovlev, “GaSb/GaAlAsSb heterostructure photodiodes for the near-IR spectral range”, Fizika i Tekhnika Poluprovodnikov, 52:9 (2018), 1094–1099; Semiconductors, 52:9 (2018), 1215–1220
Linking options:
https://www.mathnet.ru/eng/phts5744 https://www.mathnet.ru/eng/phts/v52/i9/p1094
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