Micro-profiling of 4$H$-SiC by dry etching to form a Schottky barrier diode

Methods of micro-profiling of 4$H$-SiC are described: formation of mesa structures with inclined walls (off-vertical wall inclination angle exceeding 45$^{\circ}$) by reactive ion etching; etching of mesa structures with a flat bottom and inclined walls (off-vertical wall inclination angle being smaller than 45$^{\circ}$) by ion-beam and reactive ion plasma etching. The application of etching methods in the fabrication technology of 4$H$-SiC-based mesa-epitaxial field-effect transistors with a Schottky gate is demonstrated.