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This article is cited in 1 scientific paper (total in 1 paper)
Mode-locked lasers with “thin” quantum wells in 1.55 $\mu$m spectral range
M. S. Buyaloa, I. M. Gadzhieva, N. D. Il'inskayaa, A. A. Usikovaa, I. I. Novikovbc, L. Ya. Karachinskybc, E. S. Kolodeznyic, V. E. Bugrovc, A. Yu. Egorovc, E. L. Portnoĭa a Ioffe Institute, St. Petersburg
b Connector Optics LLC, St. Petersburg
c St. Petersburg National Research University of Information Technologies, Mechanics and Optics
Abstract:
We present the results of an experimental study of two-section semiconductor lasers with active region consisting of three 3.1 nm InGaAs/InGaAlAs quantum wells. Passive mode-locking regime with a repetition rate of 10 GHz is realized. Different approaches have been compared to determine the stability of pulse repetition.
Received: 02.10.2017
Citation:
M. S. Buyalo, I. M. Gadzhiev, N. D. Il'inskaya, A. A. Usikova, I. I. Novikov, L. Ya. Karachinsky, E. S. Kolodeznyi, V. E. Bugrov, A. Yu. Egorov, E. L. Portnoǐ, “Mode-locked lasers with “thin” quantum wells in 1.55 $\mu$m spectral range”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:4 (2018), 95–102; Tech. Phys. Lett., 44:2 (2018), 174–177
Linking options:
https://www.mathnet.ru/eng/pjtf5887 https://www.mathnet.ru/eng/pjtf/v44/i4/p95
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