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This article is cited in 1 scientific paper (total in 1 paper)
Semiconductor physics
Uncooled photodiodes for detecting pulsed infrared radiation in the spectral range of 0.9–1.8 $\mu$m
E. V. Kunitsyna, A. A. Pivovarova, I. A. Andreev, G. G. Konovalov, E. V. Ivanov, N. D. Il'inskaya, Yu. P. Yakovlev Ioffe Institute, St. Petersburg
Abstract:
Uncooled photodiodes based on GaSb/GaAlAsSb heterostructures for recording pulsed infrared radiation in the spectral range of 0.9–1.8 $\mu$m are developed and studied. The GaSb active region is prepared using lead as a neutral solvent in order to reduce the concentration of natural acceptors. The capacitance of the photodiodes with a sensitive-area diameter of 300 $\mu$m is 115–135 pF without bias and 62–70 pF with a reverse bias of 1.5 V. The response speed of the photodiode measured in the photovoltaic mode using an InGaAsP/InP laser with a radiation wavelength of 1.55 $\mu$m is as high as $\tau_{0.1-0.9}$ = 42–60 ns. It is demonstrated experimentally that the fabricated photodiodes can be used without cooling to detect pulsed laser and LED radiation in the near-IR spectral region.
Keywords:
photodiodes, GaSb/GaAlAsSb heterostructures, response speed, lasers, LEDs.
Received: 24.02.2021 Revised: 15.03.2021 Accepted: 15.03.2021
Citation:
E. V. Kunitsyna, A. A. Pivovarova, I. A. Andreev, G. G. Konovalov, E. V. Ivanov, N. D. Il'inskaya, Yu. P. Yakovlev, “Uncooled photodiodes for detecting pulsed infrared radiation in the spectral range of 0.9–1.8 $\mu$m”, Fizika i Tekhnika Poluprovodnikov, 55:7 (2021), 607–613; Semiconductors, 55:7 (2021), 601–607
Linking options:
https://www.mathnet.ru/eng/phts5017 https://www.mathnet.ru/eng/phts/v55/i7/p607
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