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This article is cited in 6 scientific papers (total in 6 papers)
Semiconductor physics
Light–emitting diodes based on asymmetrical double InAs/InAsSb/InAsSbP heterostructure for CO$_{2}$ ($\lambda$ = 4.3 $\mu$m) and CO ($\lambda$ = 4.7 $\mu$m) detection
V. V. Romanov, I. A. Belykh, E. V. Ivanov, P. A. Alekseev, N. D. Il'inskaya, Yu. P. Yakovlev Ioffe Institute, St. Petersburg
Abstract:
Asymmetrical double InAs/InAsSb/InAsSbP heterostructures are grown by metalorganic vapor phase epitaxy. Two types (A and B) of light-emitting diodes with wavelengths of 4.1 and 4.7 $\mu$m at the emission-spectrum maximum are formed from these heterostructures. The room-temperature I–V and electroluminescence characteristics of the light-emitting diodes are investigated. The emission powers of light-emitting diodes A and B in the quasi-continuous mode (at a frequency of 512 Hz) at a current of 250 mA are 24 and 15 $\mu$W, respectively. In the pulsed mode (at a frequency of 512 Hz and a pulse length of 1 $\mu$s), the emission powers of light-emitting diodes A and B at a current of 2.1 A reach 158 and 76 $\mu$W, respectively. The developed light-emitting diodes can be used as high-efficiency emission sources in optical absorption sensors for detecting carbon dioxide and monoxide gases in the atmosphere.
Received: 18.12.2018 Revised: 24.12.2018 Accepted: 26.12.2018
Citation:
V. V. Romanov, I. A. Belykh, E. V. Ivanov, P. A. Alekseev, N. D. Il'inskaya, Yu. P. Yakovlev, “Light–emitting diodes based on asymmetrical double InAs/InAsSb/InAsSbP heterostructure for CO$_{2}$ ($\lambda$ = 4.3 $\mu$m) and CO ($\lambda$ = 4.7 $\mu$m) detection”, Fizika i Tekhnika Poluprovodnikov, 53:6 (2019), 832–838; Semiconductors, 53:6 (2019), 822–827
Linking options:
https://www.mathnet.ru/eng/phts5492 https://www.mathnet.ru/eng/phts/v53/i6/p832
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