Photodiode 1 $\times$ 64 linear array based on a double $p$-InAsSbP/$n$-InAs$_{0.92}$Sb$_{0.08}$/$n^{+}$-InAs heterostructure

The results of studies of the current–voltage characteristics and of the photoelectric and luminescence properties of a monolithic diode 1 $\times$ 64 linear array based on $p$-InAsSbP/$n$-InAs$_{0.92}$Sb$_{0.08}$/$n^{+}$-InAs with the $n^+$-InAs-substrate side illuminated and sensitive in the region of 4-$\mu$m are reported. An analysis is performed of the mechanisms of current flow in the temperature range of 77–353 K and also of the photosensitivity and the speed of response taking into account the spatial distribution of nonequilibrium radiation and the data of capacitance–voltage measurements.