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Publications in Math-Net.Ru |
Citations |
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2023 |
| 1. |
S. O. Slipchenko, A. A. Podoskin, D. N. Nikolaev, V. V. Shamakhov, I. S. Shashkin, M. Kandratov, I. Gordeev, A. E. Grishin, A. E. Kazakova, P. S. Gavrina, K. Bakhvalov, P. S. Kop'ev, N. A. Pikhtin, “High-power multimode semiconductor lasers (976 nm) based on asymmetric heterostructures with a broadened waveguide and reduced vertical divergence”, Kvantovaya Elektronika, 53:5 (2023), 374–378  [Bull. Lebedev Physics Institute, 50:suppl. 9 (2023), S976–S983] |
| 2. |
S. O. Slipchenko, A. A. Podoskin, V. V. Zolotarev, L. S. Vavilova, A. Yu. Leshko, M. G. Rastegaeva, I. V. Miroshnikov, I. S. Shashkin, N. A. Pikhtin, T. A. Bagaev, M. A. Ladugin, A. A. Padalitsa, A. A. Marmalyuk, V. A. Simakov, “High power and repetition rate integral laser source (1060 nm) based on laser diode array and 2D multi-element opto-thyristor array as a high-speed current switch”, Kvantovaya Elektronika, 53:1 (2023), 11–16 [Bull. Lebedev Physics Institute, 50:suppl. 5 (2023), S527–S534] |
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| 3. |
S. O. Slipchenko, A. A. Podoskin, V. A. Kryuchkov, V. A. Strelets, I. S. Shashkin, N. A. Pikhtin, “Quasi-cw high-power laser diode mini bars (<i>λ</i>=976 nm) with increased length of a resonator based on asymmetric heterostructures with a broadened waveguide”, Kvantovaya Elektronika, 53:1 (2023), 6–10 [Bull. Lebedev Physics Institute, 50:suppl. 5 (2023), S520–S526] |
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2022 |
| 4. |
S. O. Slipchenko, D. A. Veselov, V. V. Zolotarev, A. V. Lyutetskiy, A. A. Podoskin, Z. N. Sokolova, V. V. Shamakhov, I. S. Shashkin, P. S. Kop'ev, N. A. Pikhtin, “High-power laser diodes based on InGaAs(Ð)/Al(In)GaAs(P)/GaAs heterostructures with low internal optical losses”, Kvantovaya Elektronika, 52:12 (2022), 1152–1165 [Bull. Lebedev Physics Institute, 50:suppl. 4 (2023), S494–S512] |
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| 5. |
I. S. Shashkin, A. D. Rybkin, V. A. Kryuchkov, A. E. Kazakova, D. N. Romanovich, N. A. Rudova, S. O. Slipchenko, N. A. Pikhtin, “Investigation of the quasi-cw heating dynamics of an active region of high-power semiconductor lasers (<i>λ</i> = 1060 nm) with an ultra-wide emitting aperture (800 μm)”, Kvantovaya Elektronika, 52:9 (2022), 794–798 [Bull. Lebedev Physics Institute, 50:suppl. 1 (2023), S18–S24] |
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2021 |
| 6. |
A. A. Podoskin, D. N. Romanovich, I. S. Shashkin, P. S. Gavrina, Z. N. Sokolova, S. O. Slipchenko, N. A. Pikhtin, “Analysis of the threshold conditions and lasing efficiency of internally circulating modes in large rectangular cavities based on AlGaAs/GaAs/InGaAs laser heterostructures”, Fizika i Tekhnika Poluprovodnikov, 55:5 (2021), 460–465  ; Semiconductors, 55:5 (2021), 518–523 |
| 7. |
I. S. Shashkin, A. Yu. Leshko, V. V. Shamakhov, N. V. Voronkova, V. A. Kapitonov, K. V. Bakhvalov, S. O. Slipchenko, N. A. Pikhtin, P. S. Kop'ev, “High-power CW InGaAs/AlGaAs (1070 nm) lasers with a broadened lateral waveguide of a mesa-stripe structure”, Fizika i Tekhnika Poluprovodnikov, 55:4 (2021), 344–348 ; Semiconductors, 55:4 (2021), 455–459 |
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| 8. |
I. S. Shashkin, A. Yu. Leshko, V. V. Shamakhov, D. N. Romanovich, V. A. Kapitonov, K. V. Bakhvalov, S. O. Slipchenko, N. A. Pikhtin, P. S. Kop'ev, “Output optical power dynamics of semiconductor lasers (1070 nm) with a few-mode lateral waveguide of mesa-stripe design at ultrahigh drive currents”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:7 (2021), 42–45 ; Tech. Phys. Lett., 47:5 (2021), 368–371 |
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2020 |
| 9. |
A. A. Podoskin, D. N. Romanovich, I. S. Shashkin, P. S. Gavrina, Z. N. Sokolova, S. O. Slipchenko, N. A. Pikhtin, “Switching control model of closed-mode structures in large rectangular cavities based on AlGaAs/InGaAs/GaAs laser heterostructures”, Fizika i Tekhnika Poluprovodnikov, 54:5 (2020), 484–489 ; Semiconductors, 54:5 (2020), 581–586 |
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| 10. |
I. S. Shashkin, A. Yu. Leshko, D. N. Nikolaev, V. V. Shamakhov, D. A. Veselov, N. A. Rudova, K. V. Bakhvalov, V. V. Zolotarev, S. O. Slipchenko, N. A. Pikhtin, P. S. Kop'ev, “Single-mode lasers (1050 nm) of mesa-stripe design based on an AlGaAs/GaAs heterostructure with an ultra-narrow waveguide”, Fizika i Tekhnika Poluprovodnikov, 54:4 (2020), 414–419 ; Semiconductors, 54:4 (2020), 489–494 |
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| 11. |
I. S. Shashkin, A. Yu. Leshko, D. N. Nikolaev, V. V. Shamakhov, N. A. Rudova, K. V. Bakhvalov, A. V. Lyutetskiy, V. A. Kapitonov, V. V. Zolotarev, S. O. Slipchenko, N. A. Pikhtin, P. S. Kop'ev, “Light characteristics of narrow-stripe high-power semiconductor lasers (1060 nm) based on asymmetric AlGaAs/GaAs heterostructures with a broad waveguide”, Fizika i Tekhnika Poluprovodnikov, 54:4 (2020), 408–413 |
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| 12. |
Yu. K. Bobretsova, D. A. Veselov, A. A. Klimov, V. A. Kryuchkov, I. S. Shashkin, S. O. Slipchenko, N. A. Pikhtin, “Leaky wave in high-power AlGaAs/InGaAs/GaAs semiconductor lasers”, Kvantovaya Elektronika, 50:8 (2020), 722–726 [Quantum Electron., 50:8 (2020), 722–726   ] |
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| 13. |
V. S. Golovin, I. S. Shashkin, S. O. Slipchenko, N. A. Pikhtin, P. S. Kop'ev, “Longitudinal spatial hole burning in high-power semiconductor lasers: numerical analysis”, Kvantovaya Elektronika, 50:2 (2020), 147–152 [Quantum Electron., 50:2 (2020), 147–152 ] |
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2019 |
| 14. |
B. V. Sladkopevtsev, G. I. Kotov, I. N. Arsent'ev, I. S. Shashkin, I. Ya. Mittova, E. V. Tomina, A. A. Samsonov, P. V. Kostenko, “Investigation of the current–voltage characteristics of new MnO$_{2}$/GaAs(100) and V$_{2}$O$_{5}$/GaAs(100) heterostructures subjected to heat treatment”, Fizika i Tekhnika Poluprovodnikov, 53:8 (2019), 1074–1079 ; Semiconductors, 53:8 (2019), 1054–1059 |
| 15. |
A. A. Podoskin, D. N. Romanovich, I. S. Shashkin, P. S. Gavrina, Z. N. Sokolova, S. O. Slipchenko, N. A. Pikhtin, “Ñlosed mode features in rectangular resonators based on InGaAs/AlGaAs/GaAs laser heterostructures”, Fizika i Tekhnika Poluprovodnikov, 53:6 (2019), 839–843 ; Semiconductors, 53:6 (2019), 828–832 |
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2018 |
| 16. |
I. S. Shashkin, O. S. Soboleva, P. S. Gavrina, V. V. Zolotarev, S. O. Slipchenko, N. A. Pikhtin, “All-electric laser beam control based on a quantum-confined heterostructure with an integrated distributed Bragg grating”, Fizika i Tekhnika Poluprovodnikov, 52:12 (2018), 1491–1498 ; Semiconductors, 52:12 (2018), 1595–1602 |
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2017 |
| 17. |
A. A. Podoskin, I. S. Shashkin, S. O. Slipchenko, N. A. Pikhtin, I. S. Tarasov, “All-optical modulator cells based on AlGaAs/GaAs/InGaAs 905-nm laser heterostructures”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:2 (2017), 31–37 ; Tech. Phys. Lett., 43:1 (2017), 101–103 |
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2016 |
| 18. |
D. A. Veselov, I. S. Shashkin, Yu. K. Bobretsova, K. V. Bakhvalov, A. V. Lyutetskiy, V. A. Kapitonov, N. A. Pikhtin, S. O. Slipchenko, Z. N. Sokolova, I. S. Tarasov, “Study of the pulse characteristics of semiconductor lasers with a broadened waveguide at low temperatures (110–120 K)”, Fizika i Tekhnika Poluprovodnikov, 50:10 (2016), 1414–1419 ; Semiconductors, 50:10 (2016), 1396–1402 |
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| 19. |
D. A. Veselov, I. S. Shashkin, K. V. Bakhvalov, A. V. Lyutetskiy, N. A. Pikhtin, M. G. Rastegaeva, S. O. Slipchenko, E. A. Bechvay, V. A. Strelets, V. V. Shamakhov, I. S. Tarasov, “On the problem of internal optical loss and current leakage in laser heterostructures based on AlGaInAs/InP solid solutions”, Fizika i Tekhnika Poluprovodnikov, 50:9 (2016), 1247–1252 ; Semiconductors, 50:9 (2016), 1225–1230 |
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2015 |
| 20. |
D. A. Veselov, K. R. Ayusheva, I. S. Shashkin, K. V. Bakhvalov, V. V. Vasil'eva, L. S. Vavilova, A. V. Lyutetskiy, N. A. Pikhtin, S. O. Slipchenko, Z. N. Sokolova, I. S. Tarasov, “Optimisation of cavity parameters for lasers based on AlGaInAsP/InP solid solutions (λ=1470 nm)”, Kvantovaya Elektronika, 45:10 (2015), 879–883 [Quantum Electron., 45:10 (2015), 879–883 ] |
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| 21. |
D. A. Veselov, N. A. Pikhtin, A. V. Lyutetskiy, D. N. Nikolaev, S. O. Slipchenko, Z. N. Sokolova, V. V. Shamakhov, I. S. Shashkin, N. V. Voronkova, I. S. Tarasov, “Study of the absorption coefficient in layers of a semiconductor laser heterostructure”, Kvantovaya Elektronika, 45:7 (2015), 604–606 [Quantum Electron., 45:7 (2015), 604–606 ] |
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| 22. |
D. A. Veselov, N. A. Pikhtin, A. V. Lyutetskiy, D. N. Nikolaev, S. O. Slipchenko, Z. N. Sokolova, V. V. Shamakhov, I. S. Shashkin, V. A. Kapitonov, I. S. Tarasov, “Effect of laser cavity parameters on saturation of light – current characteristics of high-power pulsed lasers”, Kvantovaya Elektronika, 45:7 (2015), 597–600 [Quantum Electron., 45:7 (2015), 597–600 ] |
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2014 |
| 23. |
D. A. Veselov, V. A. Kapitonov, N. A. Pikhtin, A. V. Lyutetskiy, D. N. Nikolaev, S. O. Slipchenko, Z. N. Sokolova, V. V. Shamakhov, I. S. Shashkin, I. S. Tarasov, “Saturation of light – current characteristics of high-power lasers (λ = 1.0 – 1.1 mm) in pulsed regime”, Kvantovaya Elektronika, 44:11 (2014), 993–996 [Quantum Electron., 44:11 (2014), 993–996 ] |
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