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Publications in Math-Net.Ru |
Citations |
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2022 |
1. |
A. I. Danilov, A. V. Ivanov, V. P. Konyaev, Yu. V. Kurnyavko, M. A. Ladugin, A. V. Lobintsov, A. A. Marmalyuk, S. M. Sapozhnikov, V. A. Simakov, “Semiconductor lasers with improved radiation characteristics”, Kvantovaya Elektronika, 52:12 (2022), 1079–1087 [Bull. Lebedev Physics Institute, 50:suppl. 4 (2023), S405–S417] |
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2020 |
2. |
T. A. Bagaev, M. A. Ladugin, A. A. Padalitsa, A. A. Marmalyuk, Yu. V. Kurnyavko, A. V. Lobintsov, A. I. Danilov, S. M. Sapozhnikov, V. V. Krichevskii, V. P. Konyaev, V. A. Simakov, S. O. Slipchenko, A. A. Podoskin, N. A. Pikhtin, “Triple integrated laser–thyristor”, Kvantovaya Elektronika, 50:11 (2020), 1001–1003 [Quantum Electron., 50:11 (2020), 1001–1003 ] |
3
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3. |
K. Yu. Telegin, M. A. Ladugin, A. Yu. Andreev, I. V. Yarotskaya, N. A. Volkov, A. A. Padalitsa, A. V. Lobintsov, A. N. Aparnikov, S. M. Sapozhnikov, A. A. Marmalyuk, “The influence of waveguide doping on the output characteristics of AlGaAs/GaAs lasers”, Kvantovaya Elektronika, 50:5 (2020), 489–492 [Quantum Electron., 50:5 (2020), 489–492 ] |
4
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2019 |
4. |
T. A. Bagaev, M. A. Ladugin, A. A. Padalitsa, A. A. Marmalyuk, Yu. V. Kurnyavko, A. V. Lobintsov, A. I. Danilov, S. M. Sapozhnikov, V. V. Krichevskii, M. V. Zverkov, V. P. Konyaev, V. A. Simakov, S. O. Slipchenko, A. A. Podoskin, N. A. Pikhtin, “Double integrated laser-thyristor”, Kvantovaya Elektronika, 49:11 (2019), 1011–1013 [Quantum Electron., 49:11 (2019), 1011–1013 ] |
6
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5. |
A. A. Marmalyuk, A. V. Ivanov, V. D. Kurnosov, K. V. Kurnosov, M. A. Ladugin, A. V. Lobintsov, A. A. Padalitsa, V. I. Romantsevich, Yu. L. Ryaboshtan, S. M. Sapozhnikov, V. N. Svetogorov, V. A. Simakov, “AlGaInAs/InP semiconductor lasers with an increased electron barrier”, Kvantovaya Elektronika, 49:6 (2019), 519–521 [Quantum Electron., 49:6 (2019), 519–521 ] |
1
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2018 |
6. |
M. A. Ladugin, T. A. Bagaev, A. A. Marmalyuk, Yu. P. Koval', V. P. Konyaev, S. M. Sapozhnikov, A. V. Lobintsov, V. A. Simakov, “Compact laser diode array based on epitaxially integrated AlGaAs/GaAs heterostructures”, Kvantovaya Elektronika, 48:11 (2018), 993–995 [Quantum Electron., 48:11 (2018), 993–995 ] |
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2017 |
7. |
M. A. Ladugin, A. A. Marmalyuk, A. A. Padalitsa, K. Yu. Telegin, A. V. Lobintsov, S. M. Sapozhnikov, A. I. Danilov, A. V. Podkopaev, V. A. Simakov, “Laser diode arrays based on AlGaAs/GaAs quantum-well heterostructures with an efficiency up to 62”, Kvantovaya Elektronika, 47:8 (2017), 693–695 [Quantum Electron., 47:8 (2017), 693–695 ] |
6
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8. |
M. A. Ladugin, A. A. Marmalyuk, A. A. Padalitsa, T. A. Bagaev, A. Yu. Andreev, K. Yu. Telegin, A. V. Lobintsov, E. I. Davydova, S. M. Sapozhnikov, A. I. Danilov, A. V. Podkopaev, E. B. Ivanova, V. A. Simakov, “Laser diode bars based on AlGaAs/GaAs quantum-well heterostructures with an efficiency up to 70”, Kvantovaya Elektronika, 47:4 (2017), 291–293 [Quantum Electron., 47:4 (2017), 291–293 ] |
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2016 |
9. |
I. I. Zasavitskii, A. N. Zubov, A. Yu. Andreev, T. A. Bagaev, P. V. Gorlachuk, M. A. Ladugin, A. A. Padalitsa, A. V. Lobintsov, S. M. Sapozhnikov, A. A. Marmalyuk, “Quantum cascade laser based on GaAs/Al<sub>0.45</sub>Ga<sub>0.55</sub>As heteropair grown by MOCVD”, Kvantovaya Elektronika, 46:5 (2016), 447–450 [Quantum Electron., 46:5 (2016), 447–450 ] |
4
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2013 |
10. |
A. A. Marmalyuk, M. A. Ladugin, A. Yu. Andreev, K. Yu. Telegin, I. V. Yarotskaya, A. S. Meshkov, V. P. Konyaev, S. M. Sapozhnikov, E. I. Lebedeva, V. A. Simakov, “AlGaAs/GaAs laser diode bars (λ = 808 nm) with improved thermal stability”, Kvantovaya Elektronika, 43:10 (2013), 895–897 [Quantum Electron., 43:10 (2013), 895–897 ] |
15
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2010 |
11. |
E. I. Davydova, V. P. Konyaev, M. A. Ladugin, E. I. Lebedeva, A. A. Marmalyuk, A. A. Padalitsa, S. V. Petrov, S. M. Sapozhnikov, V. A. Simakov, M. B. Uspenskiy, I. V. Yarotskaya, “Dual-wavelength laser diodes based on epitaxially stacked heterostructures”, Kvantovaya Elektronika, 40:8 (2010), 697–699 [Quantum Electron., 40:8 (2010), 697–699 ] |
3
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12. |
E. I. Davydova, V. P. Konyaev, M. A. Ladugin, E. I. Lebedeva, A. A. Marmalyuk, A. A. Padalitsa, S. V. Petrov, S. M. Sapozhnikov, V. A. Simakov, M. B. Uspenskiy, I. V. Yarotskaya, “808-nm laser diode bars based on epitaxially stacked double heterostructures”, Kvantovaya Elektronika, 40:8 (2010), 682–684 [Quantum Electron., 40:8 (2010), 682–684 ] |
5
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2002 |
13. |
Yu. V. Abazadze, N. A. Litsarev, V. L. Pochtarev, V. A. Pashkov, A. Yu. Khachiev, A. A. Kazakov, Yu. P. Koval', V. A. Simakov, V. N. Neustrueva, G. S. Egorova, I. D. Zalevskii, A. A. Borodkin, S. M. Sapozhnikov, “Constructional features of a LISD-2M laser velocimeter and rangefinder”, Kvantovaya Elektronika, 32:3 (2002), 247–250 [Quantum Electron., 32:3 (2002), 247–250 ] |
1
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2001 |
14. |
A. Yu. Abazadze, V. V. Bezotosnyi, T. G. Gur'eva, E. I. Davydova, I. D. Zalevskii, G. M. Zverev, A. V. Lobintsov, A. A. Marmalyuk, S. M. Sapozhnikov, V. A. Simakov, M. B. Uspenskiy, V. A. Shishkin, “150-W, 808-nm quasi-cw diode arrays based on AlGaAs/GaAs heterostructures with improved thermal characteristics”, Kvantovaya Elektronika, 31:8 (2001), 659–660 [Quantum Electron., 31:8 (2001), 659–660 ] |
5
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1987 |
15. |
P. G. Eliseev, G. T. Pak, V. V. Popovichev, S. M. Sapozhnikov, “Investigation of the service life of cw GaAIAs/GaAs injection lasers”, Kvantovaya Elektronika, 14:4 (1987), 892–894 [Sov J Quantum Electron, 17:4 (1987), 566–568 ] |
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1985 |
16. |
Yu. L. Bessonov, S. S. Kurlenkov, V. N. Morozov, S. M. Sapozhnikov, Chan Min Thai, V. R. Shidlovskiĭ, “Investigation of mechanisms of multimode emission from double-heterostructure AlGaAs injection lasers with narrow stripe contacts”, Kvantovaya Elektronika, 12:2 (1985), 367–369 [Sov J Quantum Electron, 15:2 (1985), 234–236 ] |
17. |
Yu. L. Bessonov, S. S. Kurlenkov, V. N. Morozov, S. M. Sapozhnikov, Chan Min Thai, V. R. Shidlovskiĭ, “Influence of spectral width on power fluctuations of injection lasers”, Kvantovaya Elektronika, 12:2 (1985), 347–350 [Sov J Quantum Electron, 15:2 (1985), 220–223 ] |
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1980 |
18. |
I. S. Goldobin, V. D. Kurnosov, V. N. Luk'yanov, A. T. Semenov, S. M. Sapozhnikov, N. V. Shelkov, S. D. Yakubovich, “Investigation of a two-component injection heterojunction laser”, Kvantovaya Elektronika, 7:11 (1980), 2489–2491 [Sov J Quantum Electron, 10:11 (1980), 1452–1453 ] |
1
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1976 |
19. |
V. D. Kurnosov, V. N. Luk'yanov, S. M. Sapozhnikov, A. T. Semenov, Yu. A. Tambiev, “Investigation of transient stimulated emission from optically coupled lasers”, Kvantovaya Elektronika, 3:8 (1976), 1808–1811 [Sov J Quantum Electron, 6:8 (1976), 982–984] |
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