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Kvantovaya Elektronika, 2018, Volume 48, Number 11, Pages 993–995 (Mi qe16932)  

This article is cited in 5 scientific papers (total in 5 papers)

Lasers

Compact laser diode array based on epitaxially integrated AlGaAs/GaAs heterostructures

M. A. Ladugin, T. A. Bagaev, A. A. Marmalyuk, Yu. P. Koval', V. P. Konyaev, S. M. Sapozhnikov, A. V. Lobintsov, V. A. Simakov

Polyus Research and Development Institute named after M. F. Stel'makh, Moscow
References:
Abstract: The main results of the development of compact laser diode mini-arrays operating under 875-nm pulsed pumping are presented and the instrumental characteristics of these arrays are studied. Specific features of these sources, in addition to a high output power (~1.5 kW), are a narrow directional pattern (angular divergence 21° × 8°) and a small emitting area (less than 1 mm2). The use of serially integrated AlGaAs/GaAs MOCVD heterostructures with three emitting regions to develop laser diode arrays allowed us to improve their working parameters.
Keywords: laser diode array, MOCVD, integrated heterostructure.
Received: 05.09.2018
English version:
Quantum Electronics, 2018, Volume 48, Issue 11, Pages 993–995
DOI: https://doi.org/10.1070/QEL16812
Bibliographic databases:
Document Type: Article
Language: Russian


Citation: M. A. Ladugin, T. A. Bagaev, A. A. Marmalyuk, Yu. P. Koval', V. P. Konyaev, S. M. Sapozhnikov, A. V. Lobintsov, V. A. Simakov, “Compact laser diode array based on epitaxially integrated AlGaAs/GaAs heterostructures”, Kvantovaya Elektronika, 48:11 (2018), 993–995 [Quantum Electron., 48:11 (2018), 993–995]
Linking options:
  • https://www.mathnet.ru/eng/qe16932
  • https://www.mathnet.ru/eng/qe/v48/i11/p993
  • This publication is cited in the following 5 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    Квантовая электроника Quantum Electronics
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    First page:24
     
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