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This article is cited in 5 scientific papers (total in 5 papers)
Lasers
Compact laser diode array based on epitaxially integrated AlGaAs/GaAs heterostructures
M. A. Ladugin, T. A. Bagaev, A. A. Marmalyuk, Yu. P. Koval', V. P. Konyaev, S. M. Sapozhnikov, A. V. Lobintsov, V. A. Simakov Polyus Research and Development Institute named after M. F. Stel'makh, Moscow
Abstract:
The main results of the development of compact laser diode mini-arrays operating under 875-nm pulsed pumping are presented and the instrumental characteristics of these arrays are studied. Specific features of these sources, in addition to a high output power (~1.5 kW), are a narrow directional pattern (angular divergence 21° × 8°) and a small emitting area (less than 1 mm2). The use of serially integrated AlGaAs/GaAs MOCVD heterostructures with three emitting regions to develop laser diode arrays allowed us to improve their working parameters.
Keywords:
laser diode array, MOCVD, integrated heterostructure.
Received: 05.09.2018
Citation:
M. A. Ladugin, T. A. Bagaev, A. A. Marmalyuk, Yu. P. Koval', V. P. Konyaev, S. M. Sapozhnikov, A. V. Lobintsov, V. A. Simakov, “Compact laser diode array based on epitaxially integrated AlGaAs/GaAs heterostructures”, Kvantovaya Elektronika, 48:11 (2018), 993–995 [Quantum Electron., 48:11 (2018), 993–995]
Linking options:
https://www.mathnet.ru/eng/qe16932 https://www.mathnet.ru/eng/qe/v48/i11/p993
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Abstract page: | 285 | Full-text PDF : | 54 | References: | 35 | First page: | 24 |
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