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This article is cited in 6 scientific papers (total in 6 papers)
Lasers
Laser diode arrays based on AlGaAs/GaAs quantum-well heterostructures with an efficiency up to 62%
M. A. Ladugina, A. A. Marmalyukab, A. A. Padalitsaa, K. Yu. Telegina, A. V. Lobintsova, S. M. Sapozhnikova, A. I. Danilova, A. V. Podkopaeva, V. A. Simakova a Polyus Research and Development Institute named after M. F. Stel'makh, Moscow
b Moscow Engineering Physics Institute (National Nuclear Research University)
Abstract:
The results of development of quasi-cw laser diode arrays operating at a wavelength of 808 nm with a high efficiency are demonstrated. The laser diodes are based on semiconductor AlGaAs/GaAs quantum-well heterostructures grown by MOCVD. The measured spectral, spatial, electric and power characteristics are presented. The output optical power of the array with an emitting area of 5 × 10 mm is 2.7 kW at a pump current of 100 A, and the maximum efficiency reaches 62%.
Keywords:
laser diode arrays, efficiency, quantum-well heterostructures, MOCVD, AlGaAs/GaAs.
Received: 31.05.2017
Citation:
M. A. Ladugin, A. A. Marmalyuk, A. A. Padalitsa, K. Yu. Telegin, A. V. Lobintsov, S. M. Sapozhnikov, A. I. Danilov, A. V. Podkopaev, V. A. Simakov, “Laser diode arrays based on AlGaAs/GaAs quantum-well heterostructures with an efficiency up to 62%”, Kvantovaya Elektronika, 47:8 (2017), 693–695 [Quantum Electron., 47:8 (2017), 693–695]
Linking options:
https://www.mathnet.ru/eng/qe16666 https://www.mathnet.ru/eng/qe/v47/i8/p693
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Abstract page: | 571 | Full-text PDF : | 87 | References: | 43 | First page: | 25 |
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