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Kvantovaya Elektronika, 2016, Volume 46, Number 5, Pages 447–450 (Mi qe16392)  

This article is cited in 4 scientific papers (total in 4 papers)

Lasers

Quantum cascade laser based on GaAs/Al0.45Ga0.55As heteropair grown by MOCVD

I. I. Zasavitskiiab, A. N. Zubovab, A. Yu. Andreevc, T. A. Bagaevc, P. V. Gorlachukc, M. A. Laduginc, A. A. Padalitsac, A. V. Lobintsovc, S. M. Sapozhnikovc, A. A. Marmalyukbc

a P. N. Lebedev Physical Institute, Russian Academy of Sciences, Moscow
b Moscow Engineering Physics Institute (National Nuclear Research University)
c Polyus Research and Development Institute named after M. F. Stel'makh, Moscow
References:
Abstract: A pulsed quantum cascade laser emitting in the wavelength range 9.5–9.7 μm at 77.4 K is developed based on the GaAs/Al0.45Ga0.55As heteropair. The laser heterostructure was grown by MOCVD. The threshold current density was 1.8 kA cm-2. The maximum output power of the laser with dimensions of 30 μm × 3 mm and with cleaved mirrors exceeded 200 mW.
Keywords: quantum cascade laser, MOCVD, GaAs/AlGaAs heteropair, mid-IR spectral region.
Received: 20.02.2016
English version:
Quantum Electronics, 2016, Volume 46, Issue 5, Pages 447–450
DOI: https://doi.org/10.1070/QEL16058
Bibliographic databases:
Document Type: Article
Language: Russian


Citation: I. I. Zasavitskii, A. N. Zubov, A. Yu. Andreev, T. A. Bagaev, P. V. Gorlachuk, M. A. Ladugin, A. A. Padalitsa, A. V. Lobintsov, S. M. Sapozhnikov, A. A. Marmalyuk, “Quantum cascade laser based on GaAs/Al0.45Ga0.55As heteropair grown by MOCVD”, Kvantovaya Elektronika, 46:5 (2016), 447–450 [Quantum Electron., 46:5 (2016), 447–450]
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  • https://www.mathnet.ru/eng/qe16392
  • https://www.mathnet.ru/eng/qe/v46/i5/p447
  • This publication is cited in the following 4 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    Квантовая электроника Quantum Electronics
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