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This article is cited in 4 scientific papers (total in 4 papers)
Lasers
Quantum cascade laser based on GaAs/Al0.45Ga0.55As heteropair grown by MOCVD
I. I. Zasavitskiiab, A. N. Zubovab, A. Yu. Andreevc, T. A. Bagaevc, P. V. Gorlachukc, M. A. Laduginc, A. A. Padalitsac, A. V. Lobintsovc, S. M. Sapozhnikovc, A. A. Marmalyukbc a P. N. Lebedev Physical Institute, Russian Academy of Sciences, Moscow
b Moscow Engineering Physics Institute (National Nuclear Research University)
c Polyus Research and Development Institute named after M. F. Stel'makh, Moscow
Abstract:
A pulsed quantum cascade laser emitting in the wavelength range 9.5–9.7 μm at 77.4 K is developed based on the GaAs/Al0.45Ga0.55As heteropair. The laser heterostructure was grown by MOCVD. The threshold current density was 1.8 kA cm-2. The maximum output power of the laser with dimensions of 30 μm × 3 mm and with cleaved mirrors exceeded 200 mW.
Keywords:
quantum cascade laser, MOCVD, GaAs/AlGaAs heteropair, mid-IR spectral region.
Received: 20.02.2016
Citation:
I. I. Zasavitskii, A. N. Zubov, A. Yu. Andreev, T. A. Bagaev, P. V. Gorlachuk, M. A. Ladugin, A. A. Padalitsa, A. V. Lobintsov, S. M. Sapozhnikov, A. A. Marmalyuk, “Quantum cascade laser based on GaAs/Al0.45Ga0.55As heteropair grown by MOCVD”, Kvantovaya Elektronika, 46:5 (2016), 447–450 [Quantum Electron., 46:5 (2016), 447–450]
Linking options:
https://www.mathnet.ru/eng/qe16392 https://www.mathnet.ru/eng/qe/v46/i5/p447
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Abstract page: | 369 | Full-text PDF : | 154 | References: | 37 | First page: | 42 |
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