K. Yu. Telegin, M. A. Ladugin, A. Yu. Andreev, I. V. Yarotskaya, N. A. Volkov, A. A. Padalitsa, A. V. Lobintsov, A. N. Aparnikov, S. M. Sapozhnikov, A. A. Marmalyuk, “The influence of waveguide doping on the output characteristics of AlGaAs/GaAs lasers”, Kvantovaya Elektronika, 50:5 (2020), 489–492 [Quantum Electron., 50:5 (2020), 489

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Kvantovaya Elektronika, 2020, Volume 50, Number 5, Pages 489–492 (Mi qe17251)

This article is cited in 4 scientific papers (total in 4 papers)

Lasers, control of laser radiation parameters

The influence of waveguide doping on the output characteristics of AlGaAs/GaAs lasers

K. Yu. Telegin^a, M. A. Ladugin^a, A. Yu. Andreev^a, I. V. Yarotskaya^a, N. A. Volkov^a, A. A. Padalitsa^a, A. V. Lobintsov^a, A. N. Aparnikov^a, S. M. Sapozhnikov^a, A. A. Marmalyuk^ab

^a Polyus Research and Development Institute named after M. F. Stel'makh, Moscow
^b National Engineering Physics Institute "MEPhI", Moscow

Full-text PDF (544 kB) Citations (4)

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Abstract: The influence of doping of waveguide layers on the output characteristics of lasers based on AlGaAs/GaAs double separate-confinement heterostructures is analysed. The heterostructures with narrow and broadened waveguides are studied. Samples of laser diode bars with undoped and doped waveguide layers are experimentally fabricated and compared. It is shown that the latter type of structures with a broadened waveguide allows one to increase the output power of the laser diode bars by 10% – 15%, all other conditions being equal.

Keywords: semiconductor laser, laser diode bar, waveguide, doping, output power.

Funding agency	Grant number
Ministry of Education and Science of the Russian Federation	02.а03.21.0005

Received: 24.01.2020

English version:
Quantum Electronics, 2020, Volume 50, Issue 5, Pages 489–492
DOI: https://doi.org/10.1070/QEL17249

Bibliographic databases:

Document Type: Article

Language: Russian

Citation: K. Yu. Telegin, M. A. Ladugin, A. Yu. Andreev, I. V. Yarotskaya, N. A. Volkov, A. A. Padalitsa, A. V. Lobintsov, A. N. Aparnikov, S. M. Sapozhnikov, A. A. Marmalyuk, “The influence of waveguide doping on the output characteristics of AlGaAs/GaAs lasers”, Kvantovaya Elektronika, 50:5 (2020), 489–492 [Quantum Electron., 50:5 (2020), 489–492]

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https://www.mathnet.ru/eng/qe17251

https://www.mathnet.ru/eng/qe/v50/i5/p489

This publication is cited in the following 4 articles:

Chuanwang Xu, Aiyi Qi, Juwen Wang, Hongwei Qu, Liang Wang, Fansheng Meng, Renbo Han, Ting Fu, Xuyan Zhou, Wanhua Zheng, Opt. Express, 31:17 (2023), 27894
A. V. Fomin, E. V. Ershov, C. A. Kryukov, Kvantovaya elektronika, 53:12 (2023), 902–904
N. A. Volkov, T. A. Bagaev, D. R. Sabitov, A. Yu. Andreev, I. V. Yarotskaya, A. A. Padalitsa, M. A. Ladugin, A. A. Marmalyuk, K. V. Bakhvalov, D. A. Veselov, A. V. Lyutetskiy, N. A. Rudova, V. A. Strelets, S. O. Slipchenko, N. A. Pikhtin, Quantum Electron., 51:10 (2021), 905–908
H. Dong, T. Jia, Zh. Jia, J. Liang, X. Liu, B. Xu, Physica B, 604 (2021), 412619

Citing articles in Google Scholar: Russian citations, English citations
Related articles in Google Scholar: Russian articles, English articles

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Abstract page:	327
Full-text PDF :	73
References:	43
First page:	25

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