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Kvantovaya Elektronika, 2001, Volume 31, Number 8, Pages 659–660 (Mi qe2005)  

This article is cited in 5 scientific papers (total in 5 papers)

Letters

150-W, 808-nm quasi-cw diode arrays based on AlGaAs/GaAs heterostructures with improved thermal characteristics

A. Yu. Abazadzea, V. V. Bezotosnyib, T. G. Gur'evaa, E. I. Davydovaa, I. D. Zalevskiia, G. M. Zvereva, A. V. Lobintsova, A. A. Marmalyuka, S. M. Sapozhnikova, V. A. Simakova, M. B. Uspenskiya, V. A. Shishkina

a Polyus Research and Development Institute named after M. F. Stel'makh, Moscow
b P. N. Lebedev Physical Institute, Russian Academy of Sciences, Moscow
Full-text PDF (136 kB) Citations (5)
Abstract: Laser diode arrays emitting at 808 nm with extremely high output parameters are manufactured. The 150-W output power of diode arrays at a pumping current of 146 A and a pulse duration of 0.2 ms is limited by the power supply current. The external differential quantum efficiency measured from the output mirror was 80%, and the maximum total efficiency was 51%.
Received: 28.06.2001
English version:
Quantum Electronics, 2001, Volume 31, Issue 8, Pages 659–660
DOI: https://doi.org/10.1070/QE2001v031n08ABEH002005
Bibliographic databases:
Document Type: Article
PACS: 42.55.Px, 42.60.Lh
Language: Russian


Citation: A. Yu. Abazadze, V. V. Bezotosnyi, T. G. Gur'eva, E. I. Davydova, I. D. Zalevskii, G. M. Zverev, A. V. Lobintsov, A. A. Marmalyuk, S. M. Sapozhnikov, V. A. Simakov, M. B. Uspenskiy, V. A. Shishkin, “150-W, 808-nm quasi-cw diode arrays based on AlGaAs/GaAs heterostructures with improved thermal characteristics”, Kvantovaya Elektronika, 31:8 (2001), 659–660 [Quantum Electron., 31:8 (2001), 659–660]
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  • https://www.mathnet.ru/eng/qe/v31/i8/p659
  • This publication is cited in the following 5 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    Квантовая электроника Quantum Electronics
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