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This article is cited in 5 scientific papers (total in 5 papers)
Letters
150-W, 808-nm quasi-cw diode arrays based on AlGaAs/GaAs heterostructures with improved thermal characteristics
A. Yu. Abazadzea, V. V. Bezotosnyib, T. G. Gur'evaa, E. I. Davydovaa, I. D. Zalevskiia, G. M. Zvereva, A. V. Lobintsova, A. A. Marmalyuka, S. M. Sapozhnikova, V. A. Simakova, M. B. Uspenskiya, V. A. Shishkina a Polyus Research and Development Institute named after M. F. Stel'makh, Moscow
b P. N. Lebedev Physical Institute, Russian Academy of Sciences, Moscow
Abstract:
Laser diode arrays emitting at 808 nm with extremely high output parameters are manufactured. The 150-W output power of diode arrays at a pumping current of 146 A and a pulse duration of 0.2 ms is limited by the power supply current. The external differential quantum efficiency measured from the output mirror was 80%, and the maximum total efficiency was 51%.
Received: 28.06.2001
Citation:
A. Yu. Abazadze, V. V. Bezotosnyi, T. G. Gur'eva, E. I. Davydova, I. D. Zalevskii, G. M. Zverev, A. V. Lobintsov, A. A. Marmalyuk, S. M. Sapozhnikov, V. A. Simakov, M. B. Uspenskiy, V. A. Shishkin, “150-W, 808-nm quasi-cw diode arrays based on AlGaAs/GaAs heterostructures with improved thermal characteristics”, Kvantovaya Elektronika, 31:8 (2001), 659–660 [Quantum Electron., 31:8 (2001), 659–660]
Linking options:
https://www.mathnet.ru/eng/qe2005 https://www.mathnet.ru/eng/qe/v31/i8/p659
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Abstract page: | 206 | Full-text PDF : | 102 | First page: | 1 |
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