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This article is cited in 3 scientific papers (total in 3 papers)
Lasers
Dual-wavelength laser diodes based on epitaxially stacked heterostructures
E. I. Davydova, V. P. Konyaev, M. A. Ladugin, E. I. Lebedeva, A. A. Marmalyuk, A. A. Padalitsa, S. V. Petrov, S. M. Sapozhnikov, V. A. Simakov, M. B. Uspenskiy, I. V. Yarotskaya Polyus Research and Development Institute named after M. F. Stel'makh, Moscow
Abstract:
AlGaAs/GaAs double laser heterostructures containing two different active regions have been grown by metalorganic vapour phase epitaxy in a single growth process, and their properties have been studied. A typical slope of their power — current curves is 2.3 W A-1, which is almost twice that for a laser diode (1.2 W A-1). We demonstrate lasing of the emitter regions of the dual-wavelength lasers in the range 800 — 815 nm, with a separation between the peaks of ~7 nm. The observed effect of pump current on the lasing wavelength of the active regions in the dual-wavelength and single lasers indicates that the emitter region farther away from the heat sink is more sensitive to pump current variations.
Received: 12.05.2010
Citation:
E. I. Davydova, V. P. Konyaev, M. A. Ladugin, E. I. Lebedeva, A. A. Marmalyuk, A. A. Padalitsa, S. V. Petrov, S. M. Sapozhnikov, V. A. Simakov, M. B. Uspenskiy, I. V. Yarotskaya, “Dual-wavelength laser diodes based on epitaxially stacked heterostructures”, Kvantovaya Elektronika, 40:8 (2010), 697–699 [Quantum Electron., 40:8 (2010), 697–699]
Linking options:
https://www.mathnet.ru/eng/qe14364 https://www.mathnet.ru/eng/qe/v40/i8/p697
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Abstract page: | 290 | Full-text PDF : | 103 | References: | 43 | First page: | 1 |
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