M. A. Ladugin, A. A. Marmalyuk, A. A. Padalitsa, T. A. Bagaev, A. Yu. Andreev, K. Yu. Telegin, A. V. Lobintsov, E. I. Davydova, S. M. Sapozhnikov, A. I. Danilov, A. V. Podkopaev, E. B. Ivanova, V. A. Simakov, “Laser diode bars based on AlGaAs/GaAs quantum-well heterostructures with an efficiency up to 70%”, Kvantovaya Elektronika, 47:4 (2017), 291–293 [Quantum Electron., 47:4 (2017), 291

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Kvantovaya Elektronika, 2017, Volume 47, Number 4, Pages 291–293 (Mi qe16600)

This article is cited in 11 scientific papers (total in 11 papers)

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Laser diode bars based on AlGaAs/GaAs quantum-well heterostructures with an efficiency up to 70%

M. A. Ladugin^a, A. A. Marmalyuk^ab, A. A. Padalitsa^a, T. A. Bagaev^a, A. Yu. Andreev^a, K. Yu. Telegin^a, A. V. Lobintsov^a, E. I. Davydova^a, S. M. Sapozhnikov^a, A. I. Danilov^a, A. V. Podkopaev^a, E. B. Ivanova^a, V. A. Simakov^a

^a Polyus Research and Development Institute named after M. F. Stel'makh, Moscow
^b Moscow Engineering Physics Institute (National Nuclear Research University)

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Abstract: The results of the development and fabrication of laser diode bars (λ = 800 – 810 nm) based on AlGaAs/GaAs quantumwell heterostructures with a high efficiency are presented. An increase in the internal quantum and external differential efficiencies together with a decrease in the working voltage and the series resistance allowed us to improve the output parameters of the semiconductor laser under quasi-cw pumping. The output power of the laser diode bars with a 5-mm transverse length reached 210 W, and the efficiency was ~70%.

Keywords: laser diode bars, efficiency, quantum-well heterostructures, MOCVD, AlGaAs/GaAs.

Funding agency	Grant number
Ministry of Education and Science of the Russian Federation

Received: 17.03.2017

English version:
Quantum Electronics, 2017, Volume 47, Issue 4, Pages 291–293
DOI: https://doi.org/10.1070/QEL16365

Bibliographic databases:

Document Type: Article

Language: Russian

Citation: M. A. Ladugin, A. A. Marmalyuk, A. A. Padalitsa, T. A. Bagaev, A. Yu. Andreev, K. Yu. Telegin, A. V. Lobintsov, E. I. Davydova, S. M. Sapozhnikov, A. I. Danilov, A. V. Podkopaev, E. B. Ivanova, V. A. Simakov, “Laser diode bars based on AlGaAs/GaAs quantum-well heterostructures with an efficiency up to 70%”, Kvantovaya Elektronika, 47:4 (2017), 291–293 [Quantum Electron., 47:4 (2017), 291–293]

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https://www.mathnet.ru/eng/qe16600

https://www.mathnet.ru/eng/qe/v47/i4/p291

This publication is cited in the following 11 articles:

Citing articles in Google Scholar: Russian citations, English citations
Related articles in Google Scholar: Russian articles, English articles

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Full-text PDF :	135
References:	39
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