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Publications in Math-Net.Ru |
Citations |
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2021 |
| 1. |
I. P. Sotnikov, K. P. Kotlyar, R. R. Reznik, V. O. Gridchin, V. V. Lendyashova, A. V. Vershinin, V. V. Lysak, D. A. Kirilenko, N. A. Bert, G. E. Cirlin, “Specific features of structural stresses in InGaN/GaN nanowires”, Fizika i Tekhnika Poluprovodnikov, 55:9 (2021), 785–788   ; Semiconductors, 55:10 (2021), 795–798 |
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| 2. |
I. V. Ilkiv, K. P. Kotlyar, D. A. Kirilenko, A. V. Osipov, I. P. Sotnikov, A. N. Terpitsky, G. E. Cirlin, “Formation of hexagonal germanium on AlGaAs nanowire surfaces by molecular-beam epitaxy”, Fizika i Tekhnika Poluprovodnikov, 55:8 (2021), 621–624 ; Semiconductors, 55:8 (2021), 678–681 |
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| 3. |
R. R. Reznik, K. M. Morozov, I. L. Krestnikov, K. P. Kotlyar, I. P. Sotnikov, L. Leandro, N. Akopian, G. E. Cirlin, “Directional radiation from GaAs quantum dots in AlGaAs nanowires”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:8 (2021), 47–50 ; Tech. Phys. Lett., 47:5 (2021), 405–408 |
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2020 |
| 4. |
V. G. Dubrovskii, R. R. Reznik, N. V. Kryzhanovskaya, I. V. Shtrom, E. D. Ubyivovk, I. P. Soshnikov, G. E. Cirlin, “MBE-grown In$_x$ Ga$_{1-x}$ As nanowires with 50% composition”, Fizika i Tekhnika Poluprovodnikov, 54:6 (2020), 542 ; Semiconductors, 54:6 (2020), 650–653 |
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| 5. |
E. V. Fomin, A. D. Bondarev, I. P. Sotnikov, N. B. Bercu, L. Giraudet, M. Molinary, T. Maurer, N. A. Pikhtin, “Using AlN coatings to protect the surface of AlGaAs/GaAs system heterostructures from interaction with atmospheric oxygen”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:6 (2020), 16–19 ; Tech. Phys. Lett., 46:3 (2020), 268–271 |
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2019 |
| 6. |
A. V. Redkov, A. S. Grashchenko, S. A. Kukushkin, A. V. Osipov, K. P. Kotlyar, A. I. Lihachev, A. V. Nashchekin, I. P. Soshnikov, “Studying evolution of the ensemble of micropores in a SiC/Si structure during its growth by the method of atom substitution”, Fizika Tverdogo Tela, 61:3 (2019), 433–440 ; Phys. Solid State, 61:3 (2019), 299–306 |
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| 7. |
L. B. Karlina, A. S. Vlasov, M. Z. Shvarts, I. P. Soshnikov, I. P. Smirnova, F. E. Komissarenko, A. V. Ankudinov, “Ga(In)AsP lateral nanostructures as the optical component of GaAs-based photovoltaic converters”, Fizika i Tekhnika Poluprovodnikov, 53:12 (2019), 1714–1717 ; Semiconductors, 53:12 (2019), 1705–1708 |
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| 8. |
N. R. Grigor'eva, I. V. Shtrom, R. V. Grigor'ev, I. P. Soshnikov, R. R. Reznik, Yu. B. Samsonenko, N. V. Sibirev, G. E. Cirlin, “The influence of EL2 centers on the photoelectric response of an array of radial GaAs/AlGaAs nanowires”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:16 (2019), 37–40 ; Tech. Phys. Lett., 45:8 (2019), 835–838 |
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2018 |
| 9. |
A. S. Grashchenko, S. A. Kukushkin, V. I. Nikolaev, A. V. Osipov, E. V. Osipova, I. P. Soshnikov, “Study of the anisotropic elastoplastic properties of $\beta$-Ga$_{2}$O$_{3}$ films synthesized on SiC/Si substrates”, Fizika Tverdogo Tela, 60:5 (2018), 851–856 ; Phys. Solid State, 60:5 (2018), 852–857 |
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| 10. |
S. K. Evstropiev, A. S. Kulagina, K. S. Evstropyev, E. V. Kolobkova, N. V. Nikonorov, I. P. Soshnikov, K. V. Oreshkina, A. I. Khrebtov, “The influence of polyvinylpyrrolidone molecular weight on the structure and the spectral and nonlinear optical properties of composite materials with CdS/ZnS nanoparticles”, Optics and Spectroscopy, 125:5 (2018), 608–614 ; Optics and Spectroscopy, 125:5 (2018), 640–645 |
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| 11. |
N. V. Sibirev, K. P. Kotlyar, A. A. Koryakin, I. V. Shtrom, E. V. Ubyivovk, I. P. Soshnikov, R. R. Reznik, A. D. Bouravlev, G. E. Cirlin, “Solar cell based on core/shell nanowires”, Fizika i Tekhnika Poluprovodnikov, 52:12 (2018), 1464–1468 ; Semiconductors, 52:12 (2018), 1568–1572 |
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| 12. |
R. R. Reznik, K. P. Kotlyar, I. V. Ilkiv, I. P. Soshnikov, S. P. Lebedev, A. A. Lebedev, D. A. Kirilenko, P. A. Alekseev, G. E. Cirlin, “MBE growth and structural properties of GaP and InP nanowires on a SiC substrate with a graphene layer”, Fizika i Tekhnika Poluprovodnikov, 52:11 (2018), 1317–1320 ; Semiconductors, 52:11 (2018), 1428–1431 |
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| 13. |
G. E. Cirlin, R. R. Reznik, Yu. B. Samsonenko, A. I. Khrebtov, K. P. Kotlyar, I. V. Ilkiv, I. P. Sotnikov, D. A. Kirilenko, N. V. Kryzhanovskaya, “Phosphorus-based nanowires grown by molecular-beam epitaxy on silicon”, Fizika i Tekhnika Poluprovodnikov, 52:11 (2018), 1304–1307 ; Semiconductors, 52:11 (2018), 1416–1419 |
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| 14. |
L. B. Karlina, A. S. Vlasov, I. P. Soshnikov, I. P. Smirnova, B. Ya. Ber, A. B. Smirnov, “Nanostructure growth in the Ga(In)AsP–GaAs system under quasi-equilibrium conditions”, Fizika i Tekhnika Poluprovodnikov, 52:10 (2018), 1244–1249 ; Semiconductors, 52:10 (2018), 1363–1368 |
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| 15. |
R. R. Reznik, K. P. Kotlyar, I. P. Soshnikov, S. A. Kukushkin, A. V. Osipov, G. E. Cirlin, “MBE growth and structural properties of InAs and InGaAs nanowires with different mole fraction of In on Si and strongly mismatched SiC/Si(111) substrates”, Fizika i Tekhnika Poluprovodnikov, 52:5 (2018), 522 ; Semiconductors, 52:5 (2018), 651–653 |
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| 16. |
P. A. Alekseev, V. A. Sharov, P. Geydt, M. S. Dunaevskiy, I. P. Soshnikov, R. R. Reznik, V. V. Lysak, E. Lähderanta, G. E. Cirlin, “GaAs wurtzite nanowires for hybrid piezoelectric solar cells”, Fizika i Tekhnika Poluprovodnikov, 52:5 (2018), 511 ; Semiconductors, 52:5 (2018), 609–611 |
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| 17. |
I. P. Soshnikov, K. P. Kotlyar, N. A. Bert, D. A. Kirilenko, A. D. Bouravlev, G. E. Cirlin, “The features of GaAs nanowire SEM images”, Fizika i Tekhnika Poluprovodnikov, 52:5 (2018), 510 ; Semiconductors, 52:5 (2018), 605–608 |
| 18. |
Ya. V. Lubyanskiy, A. D. Bondarev, I. P. Sotnikov, N. A. Bert, V. V. Zolotarev, D. A. Kirilenko, K. P. Kotlyar, N. A. Pikhtin, I. S. Tarasov, “Oxygen nitrogen mixture effect on aluminum nitride synthesis by reactive ion plasma deposition”, Fizika i Tekhnika Poluprovodnikov, 52:2 (2018), 196–200 ; Semiconductors, 52:2 (2018), 184–188 |
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| 19. |
R. R. Reznik, G. E. Cirlin, I. V. Shtrom, A. I. Khrebtov, I. P. Sotnikov, N. V. Kryzhanovskaya, È. I. Moiseev, A. E. Zhukov, “Coherent growth of InP/InAsP/InP nanowires on a Si (111) surface by molecular-beam epitaxy”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:3 (2018), 55–61 ; Tech. Phys. Lett., 44:2 (2018), 112–114 |
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2017 |
| 20. |
R. R. Reznik, K. P. Kotlyar, I. V. Shtrom, I. P. Sotnikov, S. A. Kukushkin, A. V. Osipov, G. E. Cirlin, “MBE growth of ultrathin III–V nanowires on a highly mismatched SiC/Si(111) substrate”, Fizika i Tekhnika Poluprovodnikov, 51:11 (2017), 1525–1529 ; Semiconductors, 51:11 (2017), 1472–1476 |
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2016 |
| 21. |
I. P. Sotnikov, A. A. Semenov, P. Yu. Belyavskii, I. V. Shtrom, K. P. Kotlyar, V. V. Lisak, D. A. Kudriashov, S. I. Pavlov, A. V. Nashchekin, G. E. Cirlin, “Fabrication of the structures with autocatalytic CdTe nanowires using magnetron sputtering deposition”, Fizika Tverdogo Tela, 58:12 (2016), 2314–2318 ; Phys. Solid State, 58:12 (2016), 2401–2405 |
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| 22. |
R. R. Reznik, K. P. Kotlyar, I. V. Ilkiv, I. P. Soshnikov, S. A. Kukushkin, A. V. Osipov, E. V. Nikitina, G. E. Cirlin, “Growth and optical properties of filamentary GaN nanocrystals grown on a hybrid SiC/Si(111) substrate by molecular beam epitaxy”, Fizika Tverdogo Tela, 58:10 (2016), 1886–1889 ; Phys. Solid State, 58:10 (2016), 1952–1955 |
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| 23. |
I. V. Shtrom, A. D. Bouravlev, Yu. B. Samsonenko, A. I. Khrebtov, I. P. Sotnikov, R. R. Reznik, G. E. Cirlin, V. Dhaka, A. Perros, H. Lipsanen, “Surface passivation of GaAs nanowires by the atomic layer deposition of AlN”, Fizika i Tekhnika Poluprovodnikov, 50:12 (2016), 1644–1646 ; Semiconductors, 50:12 (2016), 1619–1621 |
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| 24. |
G. E. Cirlin, I. V. Shtrom, R. R. Reznik, Yu. B. Samsonenko, A. I. Khrebtov, A. D. Bouravlev, I. P. Sotnikov, “Hybrid AlGaAs/GaAs/AlGaAs nanowires with a quantum dot grown by molecular beam epitaxy on silicon”, Fizika i Tekhnika Poluprovodnikov, 50:11 (2016), 1441–1444 ; Semiconductors, 50:11 (2016), 1421–1424 |
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| 25. |
S. K. Evstropiev, I. P. Soshnikov, A. I. Khrebtov, “The formation of ZnO-based coatings from solutions containing high-molecular polyvinylpyrrolidone”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:9 (2016), 49–55 ; Tech. Phys. Lett., 42:5 (2016), 468–470 |
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2002 |
| 26. |
G. A. Lyubas, N. N. Ledentsov, D. Litvinov, D. Gerthsen, I. P. Sotnikov, V. M. Ustinov, “Photoluminescence and the structure of heterointerfaces of (311)A-and (311)B-oriented GaAs/AlAs superlattices”, Pis'ma v Zh. Èksper. Teoret. Fiz., 75:4 (2002), 211–216 ; JETP Letters, 75:4 (2002), 179–183  |
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