Pisma v Zhurnal Tekhnicheskoi Fiziki
RUS  ENG    JOURNALS   PEOPLE   ORGANISATIONS   CONFERENCES   SEMINARS   VIDEO LIBRARY   PACKAGE AMSBIB  
General information
Latest issue
Archive
Guidelines for authors

Search papers
Search references

RSS
Latest issue
Current issues
Archive issues
What is RSS


Pisma v Zhurnal Tekhnicheskoi Fiziki:
Year:
Volume:
Issue:
Page:
Find




Personal entry:
Login:
Password:
Save password
Enter
Forgotten password?
Register

Pisma v Zhurnal Tekhnicheskoi Fiziki, 2020, Volume 46, Issue 6, Pages 16–19
DOI: https://doi.org/10.21883/PJTF.2020.06.49158.18088 (Mi pjtf5153) 		 
This article is cited in 1 scientific paper (total in 1 paper)

Using AlN coatings to protect the surface of AlGaAs/GaAs system heterostructures from interaction with atmospheric oxygen

E. V. Fomina, A. D. Bondarevb, I. P. Sotnikovbc, N. B. Bercud, L. Giraudetd, M. Molinaryd, T. Maurere, N. A. Pikhtinab

a Saint Petersburg Electrotechnical University "LETI"
b Ioffe Institute, St. Petersburg
c Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg
d Laboratoire de Recherche en Nanosciences, Université de Reims Champagne-Ardenne, Reims, France
e Laboratoire de Nanotechnologie et d’Instrumentation Optique, ICD CNRS UMR 6281, Université de Technologie de Troyes, Troyes, France
Full-text PDF (290 kB) Citations (1)
DOI: https://doi.org/10.21883/PJTF.2020.06.49158.18088
Abstract: Thin aluminum nitride (AlN) films have been synthesized by reactive ion–plasma sputtering (RIPS) and their properties have been studied in view of using this method for obtaining protective coatings on output facets of high-power semiconductor laser cavities based on Al$_{x}$Ga$_{1-x}$As/GaAs heterostructures. Investigations by energy-dispersive X-ray spectroscopy and ellipsometry techniques showed that, at a residual pressure of $\sim$10$^{-5}$ Torr, a layer of aluminum oxynitride is formed and the film–substrate heteroboundary may experience to oxidation. However, AlN films with thicknesses on the order of 100 nm grown in pure nitrogen at a residual pressure of $\sim$10$^{-7}$ Torr were evidently free of oxygen and could reliably prevent its penetration to the region of heteroboundary.
Keywords: semiconductor lasers, thin films, passivation, aluminum nitride, degradation of lasers.
Funding agency Grant number
Grand Est Region Foundation
Centre National de la Recherche Scientifique ANR-18-CE09-0003
Graduate School EIPHI ANR-17-EURE0002
The work in the part of chemical analysis of the films was performed on the L2N/LRN NanoMat Platform supported by the Grand Est Region and the FEDER and DDRT Grand Est Foundations. T. Maurer also gratefully acknowledges support from the CNRS (project INSOMNIA, ANR-18-CE09-0003) and Graduate School EIPHI (project ANR-17-EURE0002).
Received: 28.10.2019
Revised: 16.12.2019
Accepted: 16.12.2019
English version:
Technical Physics Letters, 2020, Volume 46, Issue 3, Pages 268–271
DOI: https://doi.org/10.1134/S1063785020030207
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: E. V. Fomin, A. D. Bondarev, I. P. Sotnikov, N. B. Bercu, L. Giraudet, M. Molinary, T. Maurer, N. A. Pikhtin, “Using AlN coatings to protect the surface of AlGaAs/GaAs system heterostructures from interaction with atmospheric oxygen”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:6 (2020), 16–19; Tech. Phys. Lett., 46:3 (2020), 268–271
Citation in format AMSBIB
\Bibitem{FomBonSot20}
\by E.~V.~Fomin, A.~D.~Bondarev, I.~P.~Sotnikov, N.~B.~Bercu, L.~Giraudet, M.~Molinary, T.~Maurer, N.~A.~Pikhtin
\paper Using AlN coatings to protect the surface of AlGaAs/GaAs system heterostructures from interaction with atmospheric oxygen
\jour Pisma v Zhurnal Tekhnicheskoi Fiziki
\yr 2020
\vol 46
\issue 6
\pages 16--19
\mathnet{http://mi.mathnet.ru/pjtf5153}
\crossref{https://doi.org/10.21883/PJTF.2020.06.49158.18088}
\elib{https://elibrary.ru/item.asp?id=42776948}
\transl
\jour Tech. Phys. Lett.
\yr 2020
\vol 46
\issue 3
\pages 268--271
\crossref{https://doi.org/10.1134/S1063785020030207}
Linking options:
  • https://www.mathnet.ru/eng/pjtf5153
  • https://www.mathnet.ru/eng/pjtf/v46/i6/p16
    • This publication is cited in the following 1 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    		Pisma v Zhurnal Tekhnicheskoi Fiziki Pisma v Zhurnal Tekhnicheskoi Fiziki
    Statistics & downloads:
    Abstract page:83
    Full-text PDF :24
     
      Contact us:
    		  Terms of Use  Registration to the website  Logotypes © Steklov Mathematical Institute RAS, 2024