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Publications in Math-Net.Ru |
Citations |
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2021 |
1. |
P. V. Seredin, K. A. Barkov, D. L. Goloshchapov, A. S. Len'shin, Yu. Yu. Khudyakov, I. N. Arsent'ev, A. A. Lebedev, Sh. Sh. Sharofidinov, A. M. Mizerov, I. A. Kasatkin, T. Prutskij, “Effect of pretreatment of the silicon substrate on the properties of GaN films grown by chloride–hydride vapor-phase epitaxy”, Fizika i Tekhnika Poluprovodnikov, 55:8 (2021), 704–710 ; Semiconductors, 55:12 (2021), 995–1001 |
2. |
S. Yu. Davydov, A. A. Lebedev, P. V. Bulat, “Charge transfer in the vertical structures formed by two-dimensional layers”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:20 (2021), 16–18 |
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2020 |
3. |
G. S. Grebenyuk, I. A. Eliseyev, S. P. Lebedev, E. Yu. Lobanova, D. A. Smirnov, V. Yu. Davydov, A. A. Lebedev, I. I. Pronin, “Formation of iron silicides under graphene grown on the silicon carbide surface”, Fizika Tverdogo Tela, 62:10 (2020), 1726–1730 ; Phys. Solid State, 62:10 (2020), 1944–1948 |
2
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4. |
G. S. Grebenyuk, I. A. Eliseyev, S. P. Lebedev, E. Yu. Lobanova, D. A. Smirnov, V. Yu. Davydov, A. A. Lebedev, I. I. Pronin, “Intercalation synthesis of cobalt silicides under graphene grown on silicon carbide”, Fizika Tverdogo Tela, 62:3 (2020), 462–471 ; Phys. Solid State, 62:3 (2020), 519–528 |
5
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5. |
E. A. Panyutin, Sh. Sh. Sharofidinov, T. A. Orlova, S. A. Snytkina, A. A. Lebedev, “Biplanar epitaxial AlN/SiC/$(n,p)$SiC structures for high-temperature functional electronic devices”, Zhurnal Tekhnicheskoi Fiziki, 90:3 (2020), 450–455 ; Tech. Phys., 65:3 (2020), 428–433 |
4
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6. |
A. A. Lebedev, A. V. Kirillov, L. P. Romanov, A. V. Zubov, A. M. Strel'chuk, “Development of the processing technique and study of microwave switches based on 4$H$-SiC $p$–$i$–$n$ diodes”, Zhurnal Tekhnicheskoi Fiziki, 90:2 (2020), 264–267 ; Tech. Phys., 65:2 (2020), 250–253 |
7. |
I. A. Eliseyev, V. Yu. Davydov, A. N. Smirnov, S. V. Belov, A. V. Zubov, S. P. Lebedev, A. A. Lebedev, “Raman studies of graphene films grown on 4$H$-SiC subjected to deposition of Ni”, Fizika i Tekhnika Poluprovodnikov, 54:12 (2020), 1388 ; Semiconductors, 54:12 (2020), 1674–1677 |
8. |
A. M. Strel'chuk, A. A. Lebedev, P. V. Bulat, “Characteristics of Schottky rectifier diodes based on silicon carbide at elevated temperatures”, Fizika i Tekhnika Poluprovodnikov, 54:12 (2020), 1364–1367 ; Semiconductors, 54:12 (2020), 1624–1627 |
9. |
S. Yu. Davydov, A. A. Lebedev, A. V. Zubov, P. V. Bulat, “Model estimates of the quantum capacitance of graphene-like nanostructures”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:23 (2020), 19–21 ; Tech. Phys. Lett., 46:12 (2020), 1174–1176 |
1
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10. |
P. A. Alekseev, B. R. Borodin, I. A. Mustafin, A. V. Zubov, S. P. Lebedev, A. A. Lebedev, V. N. Trukhin, “Terahertz near-field response in graphene ribbons”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:15 (2020), 29–32 ; Tech. Phys. Lett., 46:8 (2020), 756–759 |
2
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11. |
S. Yu. Davydov, A. A. Lebedev, P. V. Bulat, A. V. Zubov, “Model estimates of the quantum capacitance of graphene nanostructures”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:15 (2020), 7–9 ; Tech. Phys. Lett., 46:8 (2020), 733–736 |
4
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12. |
A. S. Usikov, S. P. Lebedev, A. D. Roenkov, I. S. Barash, S. V. Novikov, M. V. Puzyk, A. V. Zubov, Yu. N. Makarov, A. A. Lebedev, “Studying the sensitivity of graphene for biosensor applications”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:10 (2020), 3–6 ; Tech. Phys. Lett., 46:5 (2020), 462–465 |
4
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13. |
V. V. Kozlovsky, O. Korolkov, K. S. Davydovskaja, A. A. Lebedev, M. E. Levinshteĭn, N. Sleptsuk, A. M. Strel'chuk, J. Toompuu, “Influence of the proton irradiation temperature on the characteristics of high-power high-voltage silicon carbide Schottky diodes”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:6 (2020), 35–37 ; Tech. Phys. Lett., 46:3 (2020), 287–289 |
8
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2019 |
14. |
I. S. Kotousova, S. P. Lebedev, A. A. Lebedev, P. V. Bulat, “Electron diffraction study of epitaxial graphene formed by thermal destruction of SiC(0001) in an Ar environment and in high vacuum”, Fizika Tverdogo Tela, 61:10 (2019), 1978–1984 ; Phys. Solid State, 61:10 (2019), 1940–1946 |
3
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15. |
G. S. Grebenyuk, E. Yu. Lobanova, D. A. Smirnov, I. A. Eliseyev, A. V. Zubov, A. N. Smirnov, S. P. Lebedev, V. Yu. Davydov, A. A. Lebedev, I. I. Pronin, “Cobalt intercalation of graphene on silicon carbide”, Fizika Tverdogo Tela, 61:7 (2019), 1374–1384 ; Phys. Solid State, 61:7 (2019), 1316–1326 |
10
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16. |
S. P. Lebedev, I. S. Barash, I. A. Eliseyev, P. A. Dementev, A. A. Lebedev, P. V. Bulat, “Investigation of the hydrogen etching effect of the SiC surface on the formation of graphene films”, Zhurnal Tekhnicheskoi Fiziki, 89:12 (2019), 1940–1946 ; Tech. Phys., 64:12 (2019), 1843–1849 |
2
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17. |
A. A. Lebedev, M. E. Levinshteĭn, P. A. Ivanov, V. V. Kozlovsky, A. M. Strel'chuk, E. I. Shabunina, L. Fursin, “Effect of irradiation with 15-MeV protons on low frequency noise in power SiC MOSFETs”, Fizika i Tekhnika Poluprovodnikov, 53:12 (2019), 1604–1608 ; Semiconductors, 53:12 (2019), 1568–1572 |
6
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18. |
A. A. Lebedev, V. V. Kozlovsky, P. A. Ivanov, M. E. Levinshteĭn, A. V. Zubov, “Impact of high energy elctron irradiation on surge currents in 4$H$-SiC JBS Schottky diodes”, Fizika i Tekhnika Poluprovodnikov, 53:10 (2019), 1448–1452 ; Semiconductors, 53:10 (2019), 1409–1413 |
1
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19. |
O. M. Korolkov, V. V. Kozlovsky, A. A. Lebedev, N. Sleptsuk, J. Toompuu, T. Rang, “Low-temperature annealing of lightly doped $n$-4$H$-SiC layers after irradiation with fast electrons”, Fizika i Tekhnika Poluprovodnikov, 53:7 (2019), 991–994 ; Semiconductors, 53:7 (2019), 975–978 |
4
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20. |
S. Yu. Davydov, A. V. Zubov, A. A. Lebedev, “Coulomb electron interaction between an adsorbate and substrate: a model of a surface dimer”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:18 (2019), 21–23 ; Tech. Phys. Lett., 45:9 (2019), 924–926 |
2
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21. |
A. A. Lebedev, I. P. Nikitina, N. V. Seredova, N. K. Poletaev, S. P. Lebedev, V. V. Kozlovskii, A. V. Zubov, “A study of the influence exerted by structural defects on photoluminescence spectra in $n$-3$C$-SiC”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:11 (2019), 28–30 ; Tech. Phys. Lett., 45:6 (2019), 557–559 |
3
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22. |
S. Yu. Davydov, A. V. Zubov, A. A. Lebedev, “A model of a surface dimer in the problem of adsorption”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:9 (2019), 40–42 ; Tech. Phys. Lett., 45:5 (2019), 461–463 |
5
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23. |
A. A. Lebedev, P. A. Ivanov, M. E. Levinshtein, E. N. Mokhov, S. S. Nagalyuk, A. N. Anisimov, P. G. Baranov, “SiC-based electronics (100th anniversary of the Ioffe Institute)”, UFN, 189:8 (2019), 803–848 ; Phys. Usp., 62:8 (2019), 754–794 |
15
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2018 |
24. |
A. V. Butko, V. Yu. Butko, S. P. Lebedev, A. A. Lebedev, Yu. A. Kumzerov, “Field effect in monolayer graphene associated with the formation of graphene–water interface”, Fizika Tverdogo Tela, 60:12 (2018), 2474–2477 ; Phys. Solid State, 60:12 (2018), 2668–2671 |
1
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25. |
M. V. Gomoyunova, G. S. Grebenyuk, V. Yu. Davydov, I. A. Ermakov, I. A. Eliseyev, A. A. Lebedev, S. P. Lebedev, E. Yu. Lobanova, A. N. Smirnov, D. A. Smirnov, I. I. Pronin, “Intercalation of iron atoms under graphene formed on silicon carbide”, Fizika Tverdogo Tela, 60:7 (2018), 1423–1430 ; Phys. Solid State, 60:7 (2018), 1439–1446 |
13
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26. |
I. S. Kotousova, S. P. Lebedev, A. A. Lebedev, P. V. Bulat, “Electron-diffraction study of the structure of epitaxial graphene grown by the method of thermal destruction of 6$H$- and 4$H$-SiC (0001) in vacuum”, Fizika Tverdogo Tela, 60:7 (2018), 1403–1408 ; Phys. Solid State, 60:7 (2018), 1419–1424 |
1
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27. |
S. P. Lebedev, V. Yu. Davydov, D. Yu. Usachov, A. N. Smirnov, V. S. Levitskii, I. A. Eliseyev, E. V. Gushchina, M. S. Dunaevskii, O. Yu. Vilkov, A. G. Rybkin, A. A. Lebedev, S. N. Novikov, Yu. N. Makarov, “Graphene on silicon carbide as a basis for gas- and biosensor applications”, Nanosystems: Physics, Chemistry, Mathematics, 9:1 (2018), 95–97 |
2
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28. |
A. M. Strel'chuk, V. V. Kozlovsky, A. A. Lebedev, “Radiation-induced damage of silicon-carbide diodes by high-energy particles”, Fizika i Tekhnika Poluprovodnikov, 52:13 (2018), 1651–1655 ; Semiconductors, 52:13 (2018), 1758–1762 |
5
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29. |
V. V. Kozlovsky, A. A. Lebedev, K. S. Davydovskaja, Yu. V. Lubimova, “Galvanic and capacitive effects in $n$-SiC conductivity compensation by radiation-induced defects”, Fizika i Tekhnika Poluprovodnikov, 52:12 (2018), 1532–1534 ; Semiconductors, 52:12 (2018), 1635–1637 |
30. |
N. V. Agrinskaya, A. A. Lebedev, S. P. Lebedev, M. A. Shakhov, E. Lahderanta, “Transition between electron localization and antilocalization and manifestation of the Berry phase in graphene on a SiC surface”, Fizika i Tekhnika Poluprovodnikov, 52:12 (2018), 1512–1517 ; Semiconductors, 52:12 (2018), 1616–1620 |
31. |
P. A. Alekseev, M. S. Dunaevskii, A. O. Mikhailov, S. P. Lebedev, A. A. Lebedev, I. V. Ilkiv, A. I. Khrebtov, A. D. Bouravlev, G. E. Cirlin, “Electrical properties of GaAs nanowires grown on graphene/SiC hybrid substrates”, Fizika i Tekhnika Poluprovodnikov, 52:12 (2018), 1507–1511 ; Semiconductors, 52:12 (2018), 1611–1615 |
3
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32. |
R. R. Reznik, K. P. Kotlyar, I. V. Ilkiv, I. P. Soshnikov, S. P. Lebedev, A. A. Lebedev, D. A. Kirilenko, P. A. Alekseev, G. E. Cirlin, “MBE growth and structural properties of GaP and InP nanowires on a SiC substrate with a graphene layer”, Fizika i Tekhnika Poluprovodnikov, 52:11 (2018), 1317–1320 ; Semiconductors, 52:11 (2018), 1428–1431 |
2
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33. |
V. V. Kozlovsky, A. È. Vasil'ev, P. A. Karaseov, A. A. Lebedev, “Formation of radiation defects by proton braking in lightly doped $n$- and $p$-SiC layers”, Fizika i Tekhnika Poluprovodnikov, 52:3 (2018), 327–332 ; Semiconductors, 52:3 (2018), 310–315 |
4
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34. |
S. Yu. Davydov, A. A. Lebedev, Yu. V. Lubimova, “The role of the charge state of surface atoms of a metal substrate in doping of quasi-free-standing graphene”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:23 (2018), 90–95 ; Tech. Phys. Lett., 44:12 (2018), 1089–1091 |
35. |
P. A. Alekseev, B. R. Borodin, M. S. Dunaevskii, A. N. Smirnov, V. Yu. Davydov, S. P. Lebedev, A. A. Lebedev, “Local anodic oxidation of graphene layers on SiC”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:9 (2018), 34–40 ; Tech. Phys. Lett., 44:5 (2018), 381–383 |
11
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2017 |
36. |
A. V. Butko, V. Yu. Butko, S. P. Lebedev, A. A. Lebedev, Yu. A. Kumzerov, “Field effects in graphene in an interface contact with aqueous solutions of acetic acid and potassium hydroxide”, Fizika Tverdogo Tela, 59:10 (2017), 2063–2065 ; Phys. Solid State, 59:10 (2017), 2089–2091 |
1
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37. |
V. Yu. Davydov, D. Yu. Usachov, S. P. Lebedev, A. N. Smirnov, V. S. Levitskii, I. A. Eliseyev, P. A. Alekseev, M. S. Dunaevskii, O. Yu. Vilkov, A. G. Rybkin, A. A. Lebedev, “Study of the crystal and electronic structure of graphene films grown on 6$H$-SiC (0001)”, Fizika i Tekhnika Poluprovodnikov, 51:8 (2017), 1116–1124 ; Semiconductors, 51:8 (2017), 1072–1080 |
49
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38. |
A. A. Lebedev, B. Ya. Ber, G. A. Oganesyan, S. V. Belov, S. P. Lebedev, I. P. Nikitina, N. V. Seredova, L. V. Shakhov, V. V. Kozlovsky, “Effects of irradiation with 8-MeV protons on $n$-3$C$-SiC heteroepitaxial layers”, Fizika i Tekhnika Poluprovodnikov, 51:8 (2017), 1088–1090 ; Semiconductors, 51:8 (2017), 1044–1046 |
39. |
V. V. Kozlovsky, A. A. Lebedev, A. M. Strel'chuk, K. S. Davydovskaja, A. È. Vasil'ev, L. F. Makarenko, “Effect of the energy of bombarding electrons on the conductivity of $n$-4$H$-SiC (CVD) epitaxial layers”, Fizika i Tekhnika Poluprovodnikov, 51:3 (2017), 311–316 ; Semiconductors, 51:3 (2017), 299–304 |
3
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40. |
A. A. Lebedev, K. S. Davydovskaja, A. N. Yakimenko, A. M. Strel'chuk, V. V. Kozlovsky, “A study of the effect of electron and proton irradiation on 4$H$-SiC device structures”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:22 (2017), 63–67 ; Tech. Phys. Lett., 43:11 (2017), 1027–1029 |
6
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41. |
S. P. Lebedev, I. A. Eliseyev, V. Yu. Davydov, A. N. Smirnov, V. S. Levitskii, M. G. Mynbaeva, M. M. Kulagina, B. Hähnlein, J. Pezoldt, A. A. Lebedev, “Transport properties of graphene films grown by thermodestruction of SiC (0001) surface in argon medium”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:18 (2017), 64–72 ; Tech. Phys. Lett., 43:9 (2017), 849–852 |
7
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2016 |
42. |
A. V. Butko, V. Yu. Butko, S. P. Lebedev, A. N. Smirnov, V. Yu. Davydov, A. A. Lebedev, Yu. A. Kumzerov, “Transport properties of graphene in the region of its interface with water surface”, Fizika Tverdogo Tela, 58:7 (2016), 1432–1435 ; Phys. Solid State, 58:7 (2016), 1483–1486 |
2
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43. |
A. A. Lebedev, S. P. Lebedev, S. N. Novikov, V. Yu. Davydov, A. N. Smirnov, D. P. Litvin, Yu. N. Makarov, V. S. Levitskii, “Supersensitive graphene-based gas sensor”, Zhurnal Tekhnicheskoi Fiziki, 86:3 (2016), 135–139 ; Tech. Phys., 61:3 (2016), 453–457 |
16
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44. |
A. A. Lebedev, “Growth, study, and device application prospects of graphene on SiC substrates”, Nanosystems: Physics, Chemistry, Mathematics, 7:1 (2016), 30–36 |
3
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45. |
I. S. Kotousova, S. P. Lebedev, A. A. Lebedev, “Electron-diffraction study of graphene-film growth stages during the thermal destruction of 6$H$-SiC (000$\bar1$) in vacuum”, Fizika i Tekhnika Poluprovodnikov, 50:7 (2016), 967–972 ; Semiconductors, 50:7 (2016), 951–956 |
46. |
S. Yu. Davydov, A. A. Lebedev, S. P. Lebedev, A. A. Sitnikova, L. M. Sorokin, “Development of a spinodal decomposition model for the example of a heterostructure based on silicon carbide polytypes”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:23 (2016), 66–71 ; Tech. Phys. Lett., 42:12 (2016), 1153–1155 |
1
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47. |
A. A. Lebedev, V. Yu. Davydov, S. N. Novikov, D. P. Litvin, Yu. N. Makarov, V. B. Klimovich, M. P. Samoilovich, “Graphene-based biosensors”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:14 (2016), 28–35 ; Tech. Phys. Lett., 42:7 (2016), 729–732 |
15
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2011 |
48. |
A. A. Belevtsev, S. Yu. Kazantsev, I. G. Kononov, A. A. Lebedev, S. V. Podlesnykh, K. N. Firsov, “On stability of self-sustained volume discharge in working mixtures of non-chain electrochemical HF laser”, Kvantovaya Elektronika, 41:8 (2011), 703–708 [Quantum Electron., 41:8 (2011), 703–708 ] |
8
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1992 |
49. |
A. N. Starukhin, A. A. Lebedev, B. S. Razbirin, L. M. Kapitonova, “HIDDEN ANISOTROPY OF EMITTING TRANSITIONS IN POROUS SILICON”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 18:16 (1992), 60–63 |
50. |
E. V. Astrova, V. B. Voronkov, Y. N. Daluda, V. A. Kozlov, A. A. Lebedev, “NATURE OF P-LAYER FORMED IN SEMICONDUCTING WAFER INTERFACES UNDER
SOLID-PHASE DIRECT SILICON BONDING”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 18:14 (1992), 51–56 |
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1991 |
51. |
K. P. Abdurakhmanov, G. S. Kulikov, A. A. Lebedev, Sh. B. Utemuradova, Sh. A. Yusupova, “Исследование поведения примесей марганца и никеля при диффузионном
легировании кремния”, Fizika i Tekhnika Poluprovodnikov, 25:6 (1991), 1075–1078 |
52. |
E. V. Astrova, I. A. Bobrovnikova, M. D. Vilisova, O. M. Ivleva, L. G. Lavrenteva, A. A. Lebedev, I. V. Teterkina, V. V. Chaldyshev, N. A. Chernov, Yu. V. Shmartsev, “Влияние изовалентного легирования индием на свойства эпитаксиальных
слоев арсенида галлия, выращенного из газовой фазы”, Fizika i Tekhnika Poluprovodnikov, 25:5 (1991), 898–903 |
53. |
M. M. Anikin, A. S. Zubrilov, A. A. Lebedev, A. P. Strelchuk, A. E. Cherenkov, “Рекомбинационные процессы в $6H$-SiC $p{-}n$-структурах
и влияние на них глубоких центров”, Fizika i Tekhnika Poluprovodnikov, 25:3 (1991), 479–486 |
54. |
M. M. Anikin, A. N. Andreev, A. A. Lebedev, S. N. Pyatko, M. G. Rastegaeva, N. S. Savkina, A. M. Strel'chuk, A. L. Syrkin, V. E. Chelnokov, “Высокотемпературный диод Шоттки Au$-$SiC-$6H$”, Fizika i Tekhnika Poluprovodnikov, 25:2 (1991), 328–333 |
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1990 |
55. |
M. M. Anikin, N. I. Kuznetsov, A. A. Lebedev, A. M. Strel'chuk, A. L. Syrkin, “Связь желтой электролюминесценции в $6H$-SiC с глубокими центрами”, Fizika i Tekhnika Poluprovodnikov, 24:8 (1990), 1384–1390 |
56. |
E. V. Astrova, A. A. Lebedev, “Новый способ обработки спектров DLTS”, Fizika i Tekhnika Poluprovodnikov, 24:3 (1990), 549–552 |
57. |
E. V. Astrova, V. B. Voronkov, I. B. Grekhov, V. A. Kozlov, A. A. Lebedev, “HYDROPHILIZATION OF A SURFACE UNDER THE DIRECT SILICON FUSION”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:4 (1990), 1–4 |
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1989 |
58. |
A. A. Lebedev, K. P. Abdurakhmanov, R. F. Vitman, N. B. Guseva, X. S. Daliev, Sh. B. Utemuradova, “Влияние кислорода и углерода на поведение марганца в $n$-Si”, Fizika i Tekhnika Poluprovodnikov, 23:12 (1989), 2227–2229 |
59. |
R. F. Vitman, N. A. Vitovskiy, A. A. Lebedev, T. V. Mashovets, L. V. Nalbandyan, “Исследование скоплений компенсирующих центров в $n$-Si”, Fizika i Tekhnika Poluprovodnikov, 23:11 (1989), 2066–2069 |
60. |
R. F. Vitman, N. B. Guseva, A. A. Lebedev, E. S. Taptygov, “Влияние кислорода на образование акцепторных уровней никеля в $n$-Si”, Fizika i Tekhnika Poluprovodnikov, 23:5 (1989), 919–921 |
61. |
A. A. Lebedev, V. I. Mitrokhin, S. I. Rembeza, V. V. Sviridov, M. N. Stepanova, N. P. Yaroslavtsev, “Электронно-механический резонанс на глубоких центрах
в $p^{+}{-}p^{0}{-}\pi{-}n^{0}$-структурах арсенида галлия”, Fizika i Tekhnika Poluprovodnikov, 23:5 (1989), 897–899 |
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1988 |
62. |
N. T. Bagraev, A. A. Lebedev, V. A. Mashkov, I. S. Polovtsev, “Self-compensation of iron centers in silicon under optical pumping”, Fizika Tverdogo Tela, 30:7 (1988), 2076–2084 |
63. |
R. F. Vitman, N. B. Guseva, A. A. Lebedev, A. A. Sitnikova, Sh. B. Utemuradova, “CARBON AND MANGANESE EFFECT ON THE FORMATION STRUCTURAL DEFECTS IN
SILICON”, Zhurnal Tekhnicheskoi Fiziki, 58:11 (1988), 2272–2274 |
64. |
M. M. Anikin, A. A. Lebedev, I. V. Popov, V. P. Rastegaev, A. M. Strel'chuk, A. L. Syrkin, Yu. M. Tairov, V. F. Cvetkov, V. E. Chelnokov, “Электрические характеристики эпитаксиальных
$p^{+}{-}n{-}n^{+}$-структур на основе карбида кремния политипа $6H$”, Fizika i Tekhnika Poluprovodnikov, 22:2 (1988), 298–300 |
65. |
M. M. Anikin, A. A. Lebedev, I. V. Popov, S. N. Pyatko, V. P. Rastegaev, A. L. Syrkin, B. V. Tsarenkov, V. E. Chelnokov, “Электростатические свойства SiC-$6H$-структур с резким
$p{-}n$-переходом”, Fizika i Tekhnika Poluprovodnikov, 22:1 (1988), 133–136 |
66. |
A. A. Lebedev, N. A. Sultanov, “Влияние ориентированной деформации и $\gamma$-облучения на уровни
платины в кремнии”, Fizika i Tekhnika Poluprovodnikov, 22:1 (1988), 16–19 |
67. |
E. V. Astrova, V. M. Volle, V. B. Voronkov, I. V. Grekhov, V. A. Kozlov, A. A. Lebedev, “SUPER HIGH-VOLTAGE SILICOR R-P-TRANSITIONS WITH THE BREAKDOWN PRESSURE
HIGHER-THAN-20-KV”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:11 (1988), 972–975 |
68. |
V. M. Botnaryk, Yu. V. Zhilyaev, A. G. Kechek, N. I. Kuznetsov, A. A. Lebedev, M. I. Shulga, “PREDOMINANT RECOMBINATION CENTERS IN PARA-GAAS LAYERS, OBTAINED BY
PRECIPITATION FROM THE GAS-PHASE”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:2 (1988), 181–185 |
|
1987 |
69. |
Yu. F. Shulpyakov, R. F. Vitman, L. S. Vlasenko, A. N. Dremin, A. A. Lebedev, V. N. Lomasov, T. G. Utkina, “Properties of high pressure deformed silicon crystals”, Fizika Tverdogo Tela, 29:5 (1987), 1486–1491 |
70. |
A. A. Lebedev, E. S. Taptygov, E. A. Dzhafarova, “Photoionization Cross-Sections for Nickel Levels in Silicon”, Fizika i Tekhnika Poluprovodnikov, 21:12 (1987), 2237–2239 |
71. |
A. G. Kechek, N. I. Kuznetsov, A. A. Lebedev, “Method to Increase Resolving Power of Nonstationary Capacity Spectroscopy of Deep Levels in Semiconductors”, Fizika i Tekhnika Poluprovodnikov, 21:12 (1987), 2228–2229 |
72. |
A. A. Lebedev, N. A. Sultanov, “Piezocapacity Spectroscopy of Radiation-Induced Defects in $p$-Type Si”, Fizika i Tekhnika Poluprovodnikov, 21:12 (1987), 2149–2151 |
73. |
K. S. Daliev, A. A. Lebedev, V. Ekke, “Effect of Thermal Treatment on the Density of Radiation-Induced Defects in the Dielectric and on the Semiconductor Surface of Silicon MDS Structures”, Fizika i Tekhnika Poluprovodnikov, 21:5 (1987), 836–841 |
74. |
A. A. Lebedev, N. A. Sultanov, V. Ekke, “Effect of Uniaxial Pressure on Nonstationary Capacity Spectroscopy of Deep Levels in Si$\langle$Zn$\rangle$”, Fizika i Tekhnika Poluprovodnikov, 21:2 (1987), 321–324 |
75. |
K. S. Daliev, A. A. Lebedev, V. Ekke, “Study of Electro physical Properties of Silicon MDS Structures Irradiated by $\gamma$-Quanta in the Presence of an Electric Field in the
Dielectric”, Fizika i Tekhnika Poluprovodnikov, 21:1 (1987), 23–29 |
76. |
A. A. Lebedev, N. A. Sultanov, V. Ekke, “Study of the Effect of $\gamma$-Irradiation on the Spectrum of Deep Levels in Zinc-Doped Silicon”, Fizika i Tekhnika Poluprovodnikov, 21:1 (1987), 18–22 |
77. |
L. S. Vlasenko, A. A. Lebedev, E. S. Taptygov, V. A. Khramcov, “New paramagnetic centers in nickel-alloyed silicon”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:21 (1987), 1322–1326 |
|
1986 |
78. |
M. M. Anikin, A. A. Lebedev, A. A. Lebedev, A. L. Syrkin, A. V. Suvorov, “Capacity Spectroscopy of p${-}$n Junctions Based on Epitaxial $4H$-SiC Produced by Ionic Implantation of Al”, Fizika i Tekhnika Poluprovodnikov, 20:12 (1986), 2169–2172 |
79. |
E. V. Astrova, V. M. Volle, V. B. Voronkov, V. A. Kozlov, A. A. Lebedev, “Effect of Deep Levels on Breakdown Voltage of Diodes”, Fizika i Tekhnika Poluprovodnikov, 20:11 (1986), 2122–2125 |
80. |
A. A. Lebedev, V. Ekke, “Determination of Deep-Level Concentration in Semiconductor Bulk Using Nonstationary Capacity-Spectroscopy Data under Constant Capacity”, Fizika i Tekhnika Poluprovodnikov, 20:10 (1986), 1806–1810 |
81. |
M. M. Anikin, A. A. Lebedev, I. V. Popov, A. M. Strel'chuk, A. V. Suvorov, A. L. Syrkin, V. E. Chelnokov, “Structures with Ionically Implanted p${-}$n Junction Based on Epitaxial $4H$-SiC with $S$-Like Current–Voltage Characteristic”, Fizika i Tekhnika Poluprovodnikov, 20:9 (1986), 1654–1657 |
82. |
M. M. Anikin, A. A. Lebedev, I. V. Popov, A. M. Strel'chuk, A. V. Suvorov, A. L. Syrkin, V. E. Chelnokov, “Study of Current-Voltage Characteristics of Diode Structures Based on Silicon Carbide”, Fizika i Tekhnika Poluprovodnikov, 20:5 (1986), 844–848 |
83. |
E. V. Astrova, A. A. Lebedev, “Capacity Spectroscopy of Deep Levels in Semiconductors under Photothermal Emission of Charge Carriers”, Fizika i Tekhnika Poluprovodnikov, 20:4 (1986), 683–686 |
84. |
K. P. Abdurakhmanov, K. S. Daliev, G. S. Kulikov, A. A. Lebedev, D. E. Nazirov, Sh. B. Utemuradova, “Study of Iron Interaction with Other Elements in Silicon”, Fizika i Tekhnika Poluprovodnikov, 20:1 (1986), 185–186 |
|
1985 |
85. |
N. T. Bagraev, L. S. Vlasenko, A. A. Lebedev, “SOLID GOLD SOLUTION DECAY IN SILICON .2. DATA ON NUCLEAR MOMENT OPTICAL
POLARIZATION STUDY”, Zhurnal Tekhnicheskoi Fiziki, 55:11 (1985), 2162–2169 |
86. |
N. T. Bagraev, L. S. Vlasenko, A. A. Lebedev, “SOLID GOLD SOLUTION DECAY IN SILICON .1. DATA ON NUCLEAR-SPIN-LATTICE
RELAXATION STUDY”, Zhurnal Tekhnicheskoi Fiziki, 55:11 (1985), 2149–2161 |
87. |
A. A. Lebedev, V. Ekke, “Effect of Correlated Inhomogeneous Distribution
of Surface Recombination Centers and Charges in Oxide on
Minority Charge Carrier Generation under Capacitance Spectroscopy in MDS Structures”, Fizika i Tekhnika Poluprovodnikov, 19:11 (1985), 1971–1975 |
88. |
A. A. Lebedev, V. Ekke, V. S. Yuferev, “Effect of Minority Charge Carrier Generation on the Capacity
Spectroscopy of Surface States in MDS Structures”, Fizika i Tekhnika Poluprovodnikov, 19:10 (1985), 1791–1795 |
89. |
E. V. Astrova, V. B. Voronkov, A. A. Lebedev, B. M. Urunbaev, “Study
of Thermal Defects in High-Resistance
$n$-Type Si”, Fizika i Tekhnika Poluprovodnikov, 19:9 (1985), 1709–1711 |
90. |
K. P. Abdurakhmanov, K. S. Daliev, A. A. Lebedev, Sh. B. Utemuradova, “DLTS Study of the $\gamma$-Irradiation
Effect on the Properties of $n$-Туре Si$\langle$Mn$\rangle$”, Fizika i Tekhnika Poluprovodnikov, 19:9 (1985), 1617–1619 |
91. |
E. V. Astrova, A. A. Lebedev, A. A. Lebedev, “Effect of Series Resistance
of a Diode on Unsteady Capacitance
Measurements of Deep-Level Parameters”, Fizika i Tekhnika Poluprovodnikov, 19:8 (1985), 1382–1385 |
92. |
E. V. Astrova, A. A. Lebedev, “Capacitance Measurements of Deep-Impurity Distribution Profile and
Surface Concentration in Thin Doped Layers”, Fizika i Tekhnika Poluprovodnikov, 19:8 (1985), 1375–1381 |
93. |
E. V. Astrova, V. M. Gontar, A. A. Lebedev, “Capacitance and Photoelectric
Spectroscopy of Thallium
Levels in Silicon”, Fizika i Tekhnika Poluprovodnikov, 19:7 (1985), 1273–1276 |
94. |
Yu. F. Shulpyakov, A. A. Lebedev, K. P. Abdurakhmanov, Sh. B. Utemuradova, “Effect of High Hydrostatic Pressure on Activation Energy of Mn Levels in $n$-Туре Si”, Fizika i Tekhnika Poluprovodnikov, 19:6 (1985), 1159–1161 |
95. |
K. P. Abdurakhmanov, R. F. Vitman, K. S. Daliev, A. A. Lebedev, Sh. B. Utemuradova, “Interaction
of Oxygen with Manganese in $n$-Si”, Fizika i Tekhnika Poluprovodnikov, 19:6 (1985), 1158–1159 |
96. |
K. S. Daliev, A. A. Lebedev, V. Ekke, “Evaluation of the Profile of
Silicon Oxidation-Degree Distribution
in Si$-$SiO$_{2}$ Transient Layers”, Fizika i Tekhnika Poluprovodnikov, 19:6 (1985), 1156–1158 |
97. |
A. A. Lebedev, V. Ekke, “Study of Deep-Center Density in Cathode-Sputtered SiO$_x$ Films Depending
on the Degree of Silicon Oxidation”, Fizika i Tekhnika Poluprovodnikov, 19:6 (1985), 1087–1091 |
98. |
Yu. F. Shulyshkov, R. F. Vitman, A. A. Lebedev, A. N. Dremin, “Effect of Plastic Deformation on the State of Oxygen and Carbon in
Silicon”, Fizika i Tekhnika Poluprovodnikov, 19:6 (1985), 982–986 |
99. |
E. V. Astrova, I. B. Bolshakov, A. A. Lebedev, O. A. Mikhno, “Photoconduction of Selenium-Doped Silicon”, Fizika i Tekhnika Poluprovodnikov, 19:5 (1985), 919–922 |
100. |
E. V. Astrova, A. A. Lebedev, N. A. Sultanov, V. Ekke, “Capacity Spectroscopy of Deep Levels in $n$-Si(Cr)”, Fizika i Tekhnika Poluprovodnikov, 19:5 (1985), 917–919 |
101. |
A. A. Lebedev, V. Ekke, “Capacity Spectroscopy of Radiation-Induced Defects Produced in Si$-$SiO$_{2}$ Transient Layer under Cathode Sputterig”, Fizika i Tekhnika Poluprovodnikov, 19:5 (1985), 831–835 |
102. |
E. V. Astrova, I. B. Bolshakov, A. A. Lebedev, O. A. Mikhno, “Energy Levels of Selenium in Silicon”, Fizika i Tekhnika Poluprovodnikov, 19:4 (1985), 597–600 |
103. |
K. P. Abdurakhmanov, B. A. Kotov, Z. A. Salnik, A. A. Lebedev, Sh. B. Utemuradova, “Study of Fe in $n$-Type Si by ESR and Capacity Methods”, Fizika i Tekhnika Poluprovodnikov, 19:2 (1985), 349–350 |
104. |
K. S. Daliev, A. A. Lebedev, N. A. Sultanov, V. Ekke, “Parameters of Deep Levels in Si$\langle$V$\rangle$”, Fizika i Tekhnika Poluprovodnikov, 19:2 (1985), 338–340 |
105. |
K. P. Abdurakhmanov, A. A. Lebedev, Z. A. Salnik, Sh. B. Utemuradova, “Deep Levels in Silicon Related with Manganese”, Fizika i Tekhnika Poluprovodnikov, 19:2 (1985), 213–216 |
106. |
L. M. Kapitonova, A. A. Lebedev, N. A. Sultanov, “Photoconduction of Chromium-Doped Silicon”, Fizika i Tekhnika Poluprovodnikov, 19:1 (1985), 162–164 |
107. |
M. M. Anikin, A. A. Lebedev, A. L. Syrkin, A. V. Suvorov, “Capacity-Spectroscopic Study of Deep Levels in SiC”, Fizika i Tekhnika Poluprovodnikov, 19:1 (1985), 114–117 |
|
1984 |
108. |
Yu. F. Shulpyakov, R. F. Vitman, A. A. Lebedev, A. N. Dremin, “Влияние высокого давления на состояние оптически активного кислорода
в кремнии при термообработке”, Fizika i Tekhnika Poluprovodnikov, 18:7 (1984), 1306–1307 |
109. |
M. M. Anikin, A. A. Lebedev, I. V. Popov, V. E. Sevastyanov, A. L. Sirkin, A. L. Suvorov, V. E. Chelnokov, G. P. Spynev, “RECTIFIER DIODE BASED ON SILICON-CARBIDE”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 10:17 (1984), 1053–1056 |
110. |
R. F. Vitman, N. B. Guseva, A. A. Lebedev, “FACTORS, CONTRIBUTING TO 2ND-PHASE FORMATIONS IN NONCRUCIBLE SILICON”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 10:14 (1984), 837–840 |
|
1983 |
111. |
A. A. Lebedev, A. A. Lebedev, “Емкостная спектроскопия глубоких уровней, возникающих в кремнии после
диффузии серы”, Fizika i Tekhnika Poluprovodnikov, 17:12 (1983), 2152–2155 |
112. |
V. B. Voronkov, A. A. Lebedev, V. M. Rozhkov, “Фото-ЭПР кремния, легированного железом, в обратно смещенном
$p{-}n$-переходе”, Fizika i Tekhnika Poluprovodnikov, 17:7 (1983), 1344–1347 |
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2020 |
113. |
S. P. Lebedev, I. A. Eliseyev, V. N. Panteleev, P. A. Dementev, V. V. Shnitov, M. K. Rabchinskii, D. A. Smirnov, A. V. Zubov, A. A. Lebedev, “Comparative study of conventional and quasi-freestanding epitaxial graphenes grown on 4$H$-SiC substrate”, Fizika i Tekhnika Poluprovodnikov, 54:12 (2020), 1383 ; Semiconductors, 54:12 (2020), 1657–1660 |
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