|
This article is cited in 49 scientific papers (total in 49 papers)
Carbon systems
Study of the crystal and electronic structure of graphene films grown on 6$H$-SiC (0001)
V. Yu. Davydovab, D. Yu. Usachovc, S. P. Lebedeva, A. N. Smirnovba, V. S. Levitskiia, I. A. Eliseyevca, P. A. Alekseeva, M. S. Dunaevskiia, O. Yu. Vilkovc, A. G. Rybkinc, A. A. Lebedeva a Ioffe Institute, St. Petersburg
b St. Petersburg National Research University of Information Technologies, Mechanics and Optics
c Saint Petersburg State University
Abstract:
The structural, chemical, and electronic properties of epitaxial graphene films grown by thermal decomposition of the Si-face of a semi-insulating 6$H$-SiC substrate in an argon environment are studied by Raman spectroscopy, atomic-force microscopy, the low-energy electron diffraction method, X-ray photoelectron spectroscopy, angle-resolved photoemission spectroscopy and X-ray absorption spectroscopy at the carbon $K$ edge. It is shown that the results of a systematic integrated study make it possible to optimize the growth parameters and develop a reliable technology for the growth of high-quality single-layer graphene films with a small fraction of bilayer graphene inclusions.
Received: 31.01.2017 Accepted: 08.02.2017
Citation:
V. Yu. Davydov, D. Yu. Usachov, S. P. Lebedev, A. N. Smirnov, V. S. Levitskii, I. A. Eliseyev, P. A. Alekseev, M. S. Dunaevskii, O. Yu. Vilkov, A. G. Rybkin, A. A. Lebedev, “Study of the crystal and electronic structure of graphene films grown on 6$H$-SiC (0001)”, Fizika i Tekhnika Poluprovodnikov, 51:8 (2017), 1116–1124; Semiconductors, 51:8 (2017), 1072–1080
Linking options:
https://www.mathnet.ru/eng/phts6080 https://www.mathnet.ru/eng/phts/v51/i8/p1116
|
Statistics & downloads: |
Abstract page: | 58 | Full-text PDF : | 20 |
|