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Fizika i Tekhnika Poluprovodnikov, 2019, Volume 53, Issue 10, Pages 1448–1452
DOI: https://doi.org/10.21883/FTP.2019.10.48306.9160 (Mi phts5395) 		 
This article is cited in 1 scientific paper (total in 1 paper)

Semiconductor physics

Impact of high energy elctron irradiation on surge currents in 4$H$-SiC JBS Schottky diodes

A. A. Lebedeva, V. V. Kozlovskyb, P. A. Ivanova, M. E. Levinshteĭna, A. V. Zubovc

a Ioffe Institute, St. Petersburg
b Peter the Great St. Petersburg Polytechnic University
c St. Petersburg National Research University of Information Technologies, Mechanics and Optics
Full-text PDF (277 kB) Citations (1)
DOI: https://doi.org/10.21883/FTP.2019.10.48306.9160
Abstract: The effect of high energy (0.9 MeV) electron irradiation on surge currents of high-voltage 4$H$-SiC JBS was investigated in the microsecond range of the forward current pulses duration. With irradiation dose $\Phi$ growth, the threshold of hole injection monotonically increases, and the base modulation level by minority carriers (holes) decreases. At $\Phi$ = 1.5 $\times$ 10$^{16}$ cm$^{-2}$, the hole injection is not observed up to forward voltage values of $\sim$30 V and forward current density $j\approx$ 9000 A/cm$^2$.
Keywords: silicon carbide, Schottky diodes, electron irradiation, surge currents.
Funding agency Grant number
Russian Science Foundation 16-12-10106
The study was supported in part by a grant from the Russian Science Foundation, project no. 16-12-10106.
Received: 16.05.2019
Revised: 24.05.2019
Accepted: 24.05.2019
English version:
Semiconductors, 2019, Volume 53, Issue 10, Pages 1409–1413
DOI: https://doi.org/10.1134/S1063782619100130
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: A. A. Lebedev, V. V. Kozlovsky, P. A. Ivanov, M. E. Levinshteǐn, A. V. Zubov, “Impact of high energy elctron irradiation on surge currents in 4$H$-SiC JBS Schottky diodes”, Fizika i Tekhnika Poluprovodnikov, 53:10 (2019), 1448–1452; Semiconductors, 53:10 (2019), 1409–1413
Citation in format AMSBIB
\Bibitem{LebKozIva19}
\by A.~A.~Lebedev, V.~V.~Kozlovsky, P.~A.~Ivanov, M.~E.~Levinshte{\v\i}n, A.~V.~Zubov
\paper Impact of high energy elctron irradiation on surge currents in 4$H$-SiC JBS Schottky diodes
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2019
\vol 53
\issue 10
\pages 1448--1452
\mathnet{http://mi.mathnet.ru/phts5395}
\crossref{https://doi.org/10.21883/FTP.2019.10.48306.9160}
\elib{https://elibrary.ru/item.asp?id=41174904}
\transl
\jour Semiconductors
\yr 2019
\vol 53
\issue 10
\pages 1409--1413
\crossref{https://doi.org/10.1134/S1063782619100130}
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  • https://www.mathnet.ru/eng/phts/v53/i10/p1448
    • This publication is cited in the following 1 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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