Uspekhi Fizicheskikh Nauk
RUS  ENG    JOURNALS   PEOPLE   ORGANISATIONS   CONFERENCES   SEMINARS   VIDEO LIBRARY   PACKAGE AMSBIB  
General information
Latest issue
Forthcoming papers
Archive
Impact factor
Guidelines for authors
Submit a manuscript

Search papers
Search references

RSS
Latest issue
Current issues
Archive issues
What is RSS


UFN:
Year:
Volume:
Issue:
Page:
Find




Personal entry:
Login:
Password:
Save password
Enter
Forgotten password?
Register

Uspekhi Fizicheskikh Nauk, 2019, Volume 189, Number 8, Pages 803–848
DOI: https://doi.org/10.3367/UFNr.2018.10.038437 (Mi ufn6380) 		 
This article is cited in 15 scientific papers (total in 15 papers)

REVIEWS OF TOPICAL PROBLEMS

SiC-based electronics (100th anniversary of the Ioffe Institute)

A. A. Lebedev, P. A. Ivanov, M. E. Levinshtein, E. N. Mokhov, S. S. Nagalyuk, A. N. Anisimov, P. G. Baranov

Ioffe Institute, St. Petersburg
Full-text PDF (2026 kB) Citations (15)
References:
PDF
HTML
DOI: https://doi.org/10.3367/UFNr.2018.10.038437
Abstract: We review the history and modern state of silicon carbide and SiC-based devices. The main techniques for growing bulk SiC crystals and epitaxial SiC films are discussed. Epitaxial SiC structures used for post-growth processing are briefly reviewed. The state of the art achieved in developing SiC devices is presented. The main problems that occur in developing SiC equipment and prospects for designing and developing such equipment are analyzed.
Funding agency Grant number
Russian Science Foundation 16-42-01098
Received: September 4, 2018
Revised: October 1, 2018
Accepted: October 4, 2018
English version:
Physics–Uspekhi, 2019, Volume 62, Issue 8, Pages 754–794
DOI: https://doi.org/10.3367/UFNe.2018.10.038437
Bibliographic databases:
Document Type: Article
PACS: 81.05.ue, 81.10.-h, 85.30.-z
Language: Russian
Citation: A. A. Lebedev, P. A. Ivanov, M. E. Levinshtein, E. N. Mokhov, S. S. Nagalyuk, A. N. Anisimov, P. G. Baranov, “SiC-based electronics (100th anniversary of the Ioffe Institute)”, UFN, 189:8 (2019), 803–848; Phys. Usp., 62:8 (2019), 754–794
Citation in format AMSBIB
\Bibitem{LebIvaLev19}
\by A.~A.~Lebedev, P.~A.~Ivanov, M.~E.~Levinshtein, E.~N.~Mokhov, S.~S.~Nagalyuk, A.~N.~Anisimov, P.~G.~Baranov
\paper SiC-based electronics (100th anniversary of the Ioffe Institute)
\jour UFN
\yr 2019
\vol 189
\issue 8
\pages 803--848
\mathnet{http://mi.mathnet.ru/ufn6380}
\crossref{https://doi.org/10.3367/UFNr.2018.10.038437}
\adsnasa{https://adsabs.harvard.edu/cgi-bin/bib_query?2019PhyU...62..754L}
\elib{https://elibrary.ru/item.asp?id=43230984}
\transl
\jour Phys. Usp.
\yr 2019
\vol 62
\issue 8
\pages 754--794
\crossref{https://doi.org/10.3367/UFNe.2018.10.038437}
\isi{https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=Publons&SrcAuth=Publons_CEL&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=000504891900002}
\scopus{https://www.scopus.com/record/display.url?origin=inward&eid=2-s2.0-85076766922}
Linking options:
  • https://www.mathnet.ru/eng/ufn6380
  • https://www.mathnet.ru/eng/ufn/v189/i8/p803
    Related publications
    This publication is cited in the following 15 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    		Успехи физических наук Physics-Uspekhi
     
      Contact us:
    		  Terms of Use  Registration to the website  Logotypes © Steklov Mathematical Institute RAS, 2024