Abstract:
The graphene growth by thermal decomposition of silicon carbide at the temperature of ∼1400∘C in a high vacuum of ∼10−6 Torr has been optimized. By Raman spectroscopy, the mean thickness of obtained graphene (2–4 single layers) has been estimated and the presence of high-quality graphene areas in the samples has been demonstrated. It has been found out that the four-point resistance of graphene increases in the region of its interface with water approximately by 25%. For the graphene–water interface in the transistor geometry, with variation in the gate-to-source voltage, the field effect corresponding to the hole type of charge carries in graphene has been revealed.
Citation:
A. V. Butko, V. Yu. Butko, S. P. Lebedev, A. N. Smirnov, V. Yu. Davydov, A. A. Lebedev, Yu. A. Kumzerov, “Transport properties of graphene in the region of its interface with water surface”, Fizika Tverdogo Tela, 58:7 (2016), 1432–1435; Phys. Solid State, 58:7 (2016), 1483–1486
\Bibitem{ButButLeb16}
\by A.~V.~Butko, V.~Yu.~Butko, S.~P.~Lebedev, A.~N.~Smirnov, V.~Yu.~Davydov, A.~A.~Lebedev, Yu.~A.~Kumzerov
\paper Transport properties of graphene in the region of its interface with water surface
\jour Fizika Tverdogo Tela
\yr 2016
\vol 58
\issue 7
\pages 1432--1435
\mathnet{http://mi.mathnet.ru/ftt9936}
\elib{https://elibrary.ru/item.asp?id=27368697}
\transl
\jour Phys. Solid State
\yr 2016
\vol 58
\issue 7
\pages 1483--1486
\crossref{https://doi.org/10.1134/S1063783416070106}
Linking options:
https://www.mathnet.ru/eng/ftt9936
https://www.mathnet.ru/eng/ftt/v58/i7/p1432
This publication is cited in the following 2 articles: