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This article is cited in 2 scientific papers (total in 2 papers)
Graphenes
Transport properties of graphene in the region of its interface with water surface
A. V. Butkoa, V. Yu. Butkoab, S. P. Lebedevac, A. N. Smirnova, V. Yu. Davydova, A. A. Lebedeva, Yu. A. Kumzerova a Ioffe Institute, St. Petersburg
b St. Petersburg Academic University — Nanotechnology Research and Education Centre of the Russian Academy of Sciences (the Academic University)
c St. Petersburg National Research University of Information Technologies, Mechanics and Optics
Abstract:
The graphene growth by thermal decomposition of silicon carbide at the temperature of $\sim$1400$^\circ$C in a high vacuum of $\sim$10$^{-6}$ Torr has been optimized. By Raman spectroscopy, the mean thickness of obtained graphene (2–4 single layers) has been estimated and the presence of high-quality graphene areas in the samples has been demonstrated. It has been found out that the four-point resistance of graphene increases in the region of its interface with water approximately by 25%. For the graphene–water interface in the transistor geometry, with variation in the gate-to-source voltage, the field effect corresponding to the hole type of charge carries in graphene has been revealed.
Received: 16.12.2015
Citation:
A. V. Butko, V. Yu. Butko, S. P. Lebedev, A. N. Smirnov, V. Yu. Davydov, A. A. Lebedev, Yu. A. Kumzerov, “Transport properties of graphene in the region of its interface with water surface”, Fizika Tverdogo Tela, 58:7 (2016), 1432–1435; Phys. Solid State, 58:7 (2016), 1483–1486
Linking options:
https://www.mathnet.ru/eng/ftt9936 https://www.mathnet.ru/eng/ftt/v58/i7/p1432
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