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Publications in Math-Net.Ru |
Citations |
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2020 |
| 1. |
D. O. Filatov, D. A. Antonov, I. N. Antonov, A. I. Belov, V. N. Baranova, M. E. Shenina, O. N. Gorshkov, “Resistive switching of memristors based on stabilized zirconia by complex signals”, Fizika Tverdogo Tela, 62:4 (2020), 556–561   ; Phys. Solid State, 62:4 (2020), 642–647 |
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| 2. |
S. V. Tikhov, V. G. Shengurov, S. A. Denisov, I. N. Antonov, A. V. Kruglov, A. I. Belov, D. O. Filatov, O. N. Gorshkov, A. N. Mikhaylov, “Resistive switching in metal–oxide–semiconductor structures with GeSi nanoislands on a silicon substrate”, Zhurnal Tekhnicheskoi Fiziki, 90:10 (2020), 1741–1749 ; Tech. Phys., 65:10 (2020), 1668–1676 |
| 3. |
S. V. Tikhov, A. I. Belov, D. S. Korolev, I. N. Antonov, A. A. Sushkov, D. A. Pavlov, D. I. Tetelbaum, O. N. Gorshkov, A. N. Mikhaylov, “Electrophysical characteristics of multilayer memristive nanostructures based on yttria-stabilized zirconia and tantalum oxide”, Zhurnal Tekhnicheskoi Fiziki, 90:2 (2020), 298–304 ; Tech. Phys., 65:2 (2020), 284–290 |
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2019 |
| 4. |
S. V. Tikhov, O. N. Gorshkov, A. I. Belov, I. N. Antonov, A. I. Morozov, M. N. Koryazhkina, A. N. Mikhaylov, “Mechanisms of current transport and resistive switching in capacitors with yttria-stabilized hafnia layers”, Zhurnal Tekhnicheskoi Fiziki, 89:6 (2019), 927–934 ; Tech. Phys., 64:6 (2019), 873–880 |
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| 5. |
E. V. Okulich, M. N. Koryazhkina, D. S. Korolev, A. I. Belov, M. E. Shenina, A. N. Mikhaylov, D. I. Tetelbaum, I. N. Antonov, Yu. A. Dudin, “The effect of irradiation with Si$^{+}$ ions on the resistive switching of memristive structures based on yttria stabilized zirconia”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:14 (2019), 3–6 ; Tech. Phys. Lett., 45:7 (2019), 690–693 |
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2018 |
| 6. |
S. V. Tikhov, O. N. Gorshkov, I. N. Antonov, D. I. Tetelbaum, A. N. Mikhaylov, A. I. Belov, A. I. Morozov, P. Karakolis, P. Dimitrakis, “Behavioral features of MIS memristors with a Si$_{3}$N$_{4}$ nanolayer fabricated on a conductive Si substrate”, Fizika i Tekhnika Poluprovodnikov, 52:12 (2018), 1436–1442 ; Semiconductors, 52:12 (2018), 1540–1546 |
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| 7. |
A. N. Tereshchenko, D. S. Korolev, A. N. Mikhaylov, A. I. Belov, A. A. Nikolskaya, D. A. Pavlov, D. I. Tetelbaum, E. A. Steinman, “Effect of boron impurity on the light-emitting properties of dislocation structures formed in silicon by Si$^{+}$ ion implantation”, Fizika i Tekhnika Poluprovodnikov, 52:7 (2018), 702–707 ; Semiconductors, 52:7 (2018), 843–848 |
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2017 |
| 8. |
S. A. Gerasimova, A. N. Mikhaylov, A. I. Belov, D. S. Korolev, O. N. Gorshkov, V. B. Kazantsev, “Simulation of synaptic coupling of neuron-like generators via a memristive device”, Zhurnal Tekhnicheskoi Fiziki, 87:8 (2017), 1248–1254 ; Tech. Phys., 62:8 (2017), 1259–1265 |
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| 9. |
D. S. Korolev, A. A. Nikolskaya, N. O. Krivulin, A. I. Belov, A. N. Mikhaylov, D. A. Pavlov, D. I. Tetelbaum, N. A. Sobolev, M. Kumar, “Formation of hexagonal 9$R$ silicon polytype by ion implantation”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:16 (2017), 87–92 ; Tech. Phys. Lett., 43:8 (2017), 767–769 |
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2016 |
| 10. |
S. V. Tikhov, O. N. Gorshkov, I. N. Antonov, A. P. Kasatkin, D. S. Korolev, A. I. Belov, A. N. Mikhaylov, D. I. Tetelbaum, “Change of immitance during electroforming and resistive switching in the metal-insulator-metal memristive structures based on SiO$_{x}$”, Zhurnal Tekhnicheskoi Fiziki, 86:5 (2016), 107–111 ; Tech. Phys., 61:5 (2016), 745–749 |
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| 11. |
D. S. Korolev, A. N. Mikhaylov, A. I. Belov, V. K. Vasil'ev, D. V. Guseinov, E. V. Okulich, A. A. Shemukhin, S. I. Surodin, D. E. Nikolichev, A. V. Nezhdanov, A. V. Pirogov, D. A. Pavlov, D. I. Tetelbaum, “Layer-by-layer composition and structure of silicon subjected to combined gallium and nitrogen ion implantation for the ion synthesis of gallium nitride”, Fizika i Tekhnika Poluprovodnikov, 50:2 (2016), 274–278 ; Semiconductors, 50:2 (2016), 271–275 |
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| 12. |
A. I. Belov, A. N. Mikhaylov, D. S. Korolev, V. A. Sergeev, I. N. Antonov, O. N. Gorshkov, D. I. Tetelbaum, “Resistive switching in Au/SiO$_{x}$/TiN/Ti memristive structures with varied geometric parameters and stoichiometry of dielectric film”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:10 (2016), 17–24 ; Tech. Phys. Lett., 42:5 (2016), 505–508 |
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