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This article is cited in 9 scientific papers (total in 9 papers)
Formation of hexagonal 9$R$ silicon polytype by ion implantation
D. S. Koroleva, A. A. Nikolskayaa, N. O. Krivulina, A. I. Belova, A. N. Mikhaylova, D. A. Pavlova, D. I. Tetelbauma, N. A. Sobolevb, M. Kumarc a Lobachevsky State University of Nizhny Novgorod
b Ioffe Institute, St. Petersburg
c Indian Institute of Technology Jodhpur, Jodhpur, India
Abstract:
Transmission electron-microscopy examination revealed the appearance of a hexagonal silicon (9$R$ polytype) inclusions in the subsrface silicon layer upon ion implantation and subsequent heat treatment of the SiO$_2$/Si structure. The formation of this hexagonal phase is stimulated by mechanical stresses arising in the heterophase system in the course of ion implantation.
Received: 03.05.2017
Citation:
D. S. Korolev, A. A. Nikolskaya, N. O. Krivulin, A. I. Belov, A. N. Mikhaylov, D. A. Pavlov, D. I. Tetelbaum, N. A. Sobolev, M. Kumar, “Formation of hexagonal 9$R$ silicon polytype by ion implantation”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:16 (2017), 87–92; Tech. Phys. Lett., 43:8 (2017), 767–769
Linking options:
https://www.mathnet.ru/eng/pjtf6151 https://www.mathnet.ru/eng/pjtf/v43/i16/p87
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