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Fizika i Tekhnika Poluprovodnikov, 2016, Volume 50, Issue 2, Pages 274–278 (Mi phts6552)  
This article is cited in 7 scientific papers (total in 7 papers)

Manufacturing, processing, testing of materials and structures

Layer-by-layer composition and structure of silicon subjected to combined gallium and nitrogen ion implantation for the ion synthesis of gallium nitride

D. S. Koroleva, A. N. Mikhaylova, A. I. Belova, V. K. Vasil'eva, D. V. Guseinova, E. V. Okulicha, A. A. Shemukhinb, S. I. Surodina, D. E. Nikolicheva, A. V. Nezhdanova, A. V. Pirogova, D. A. Pavlova, D. I. Tetelbauma

a Lobachevsky State University of Nizhny Novgorod
b Lomonosov Moscow State University, Skobeltsyn Institute of Nuclear Physics
Full-text PDF (668 kB) Citations (7)
Abstract: The composition and structure of silicon surface layers subjected to combined gallium and nitrogen ion implantation with subsequent annealing have been studied by the X-ray photoelectron spectroscopy, Rutherford backscattering, electron spin resonance, Raman spectroscopy, and transmission electron microscopy techniques. A slight redistribution of the implanted atoms before annealing and their substantial migration towards the surface during annealing depending on the sequence of implantations are observed. It is found that about 2% of atoms of the implanted layer are replaced with gallium bonded to nitrogen; however, it is impossible to detect the gallium-nitride phase. At the same time, gallium-enriched inclusions containing $\sim$25 at % of gallium are detected as candidates for the further synthesis of gallium-nitride inclusions.
Keywords: Gallium, Annealing Atmosphere, Inverse Sequence, SRIM Software, SRIM Calculation.
Received: 28.05.2015
Accepted: 15.06.2015
English version:
Semiconductors, 2016, Volume 50, Issue 2, Pages 271–275
DOI: https://doi.org/10.1134/S1063782616020135
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: D. S. Korolev, A. N. Mikhaylov, A. I. Belov, V. K. Vasil'ev, D. V. Guseinov, E. V. Okulich, A. A. Shemukhin, S. I. Surodin, D. E. Nikolichev, A. V. Nezhdanov, A. V. Pirogov, D. A. Pavlov, D. I. Tetelbaum, “Layer-by-layer composition and structure of silicon subjected to combined gallium and nitrogen ion implantation for the ion synthesis of gallium nitride”, Fizika i Tekhnika Poluprovodnikov, 50:2 (2016), 274–278; Semiconductors, 50:2 (2016), 271–275
Citation in format AMSBIB
\Bibitem{KorMikBel16}
\by D.~S.~Korolev, A.~N.~Mikhaylov, A.~I.~Belov, V.~K.~Vasil'ev, D.~V.~Guseinov, E.~V.~Okulich, A.~A.~Shemukhin, S.~I.~Surodin, D.~E.~Nikolichev, A.~V.~Nezhdanov, A.~V.~Pirogov, D.~A.~Pavlov, D.~I.~Tetelbaum
\paper Layer-by-layer composition and structure of silicon subjected to combined gallium and nitrogen ion implantation for the ion synthesis of gallium nitride
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2016
\vol 50
\issue 2
\pages 274--278
\mathnet{http://mi.mathnet.ru/phts6552}
\elib{https://elibrary.ru/item.asp?id=25668134}
\transl
\jour Semiconductors
\yr 2016
\vol 50
\issue 2
\pages 271--275
\crossref{https://doi.org/10.1134/S1063782616020135}
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    • This publication is cited in the following 7 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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