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Publications in Math-Net.Ru |
Citations |
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2024 |
| 1. |
K. A. Podgaetskii, A. V. Lobintsov, A. I. Danilov, A. V. Ivanov, M. A. Ladugin, A. A. Marmalyuk, E. V. Kuznetsov, V. V. Dyudelev, D. A. Mikhailov, D. V. Chistyakov, E. A. Kognovitskaya, S. N. Losev, S. H. Abdulrazak, A. V. Babichev, G. M. Savchenko, A. V. Lyutetskiy, S. O. Slipchenko, N. A. Pikhtin, A. G. Gladyshev, I. I. Novikov, L. Ya. Karachinsky, A. Yu. Egorov, G. S. Sokolovskii, “Квантовые каскадные лазеры InGaAs/AlInAs/InP с отражающими и просветляющими оптическими покрытиями”, Kvantovaya Elektronika, 54:2 (2024), 100–103  |
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2023 |
| 2. |
K. A. Podgaetskii, A. V. Lobintsov, A. I. Danilov, A. V. Ivanov, M. A. Ladugin, A. A. Marmalyuk, E. V. Kuznetsov, V. V. Dyudelev, D. A. Mikhailov, D. V. Chistyakov, A. V. Babichev, E. A. Kognovitskaya, A. V. Lyutetskiy, S. O. Slipchenko, N. A. Pikhtin, A. G. Gladyshev, I. I. Novikov, L. Ya. Karachinsky, A. Yu. Egorov, G. S. Sokolovskii, “Metal–dielectric mirror coatings for 4–5-μm quantum-cascade lasers”, Kvantovaya Elektronika, 53:8 (2023), 641–644 [Bull. Lebedev Physics Institute, 50:suppl. 12 (2023), S1356–S1360] |
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| 3. |
K. A. Podgaetskii, A. V. Lobintsov, A. I. Danilov, A. V. Ivanov, M. A. Ladugin, A. A. Marmalyuk, V. V. Dyudelev, D. A. Mikhailov, D. V. Chistyakov, A. V. Babichev, G. M. Savchenko, A. V. Lyutetskiy, S. O. Slipchenko, N. A. Pikhtin, A. G. Gladyshev, I. I. Novikov, L. Ya. Karachinsky, A. Yu. Egorov, G. S. Sokolovskii, “Dielectric highly reflective mirror coatings for quantum cascade lasers with 4 - 5 μm emission wavelength”, Kvantovaya Elektronika, 53:5 (2023), 370–373 |
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2022 |
| 4. |
A. I. Danilov, A. V. Ivanov, V. P. Konyaev, Yu. V. Kurnyavko, M. A. Ladugin, A. V. Lobintsov, A. A. Marmalyuk, S. M. Sapozhnikov, V. A. Simakov, “Semiconductor lasers with improved radiation characteristics”, Kvantovaya Elektronika, 52:12 (2022), 1079–1087 [Bull. Lebedev Physics Institute, 50:suppl. 4 (2023), S405–S417] |
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2020 |
| 5. |
T. A. Bagaev, M. A. Ladugin, A. A. Padalitsa, A. A. Marmalyuk, Yu. V. Kurnyavko, A. V. Lobintsov, A. I. Danilov, S. M. Sapozhnikov, V. V. Krichevskii, V. P. Konyaev, V. A. Simakov, S. O. Slipchenko, A. A. Podoskin, N. A. Pikhtin, “Triple integrated laser–thyristor”, Kvantovaya Elektronika, 50:11 (2020), 1001–1003  [Quantum Electron., 50:11 (2020), 1001–1003   ] |
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| 6. |
I. S. Molodtsov, N. A. Raspopov, A. V. Lobintsov, A. I. Danilov, A. B. Krysa, I. I. Zasavitskii, “Quantum cascade laser with bound-to-quasi-continuum optical transitions at a temperature of up to 371 K”, Kvantovaya Elektronika, 50:8 (2020), 710–713 [Quantum Electron., 50:8 (2020), 710–713 ] |
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| 7. |
K. Yu. Telegin, M. A. Ladugin, A. Yu. Andreev, I. V. Yarotskaya, N. A. Volkov, A. A. Padalitsa, A. V. Lobintsov, A. N. Aparnikov, S. M. Sapozhnikov, A. A. Marmalyuk, “The influence of waveguide doping on the output characteristics of AlGaAs/GaAs lasers”, Kvantovaya Elektronika, 50:5 (2020), 489–492 [Quantum Electron., 50:5 (2020), 489–492 ] |
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2019 |
| 8. |
T. A. Bagaev, M. A. Ladugin, A. A. Padalitsa, A. A. Marmalyuk, Yu. V. Kurnyavko, A. V. Lobintsov, A. I. Danilov, S. M. Sapozhnikov, V. V. Krichevskii, M. V. Zverkov, V. P. Konyaev, V. A. Simakov, S. O. Slipchenko, A. A. Podoskin, N. A. Pikhtin, “Double integrated laser-thyristor”, Kvantovaya Elektronika, 49:11 (2019), 1011–1013 [Quantum Electron., 49:11 (2019), 1011–1013 ] |
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| 9. |
A. A. Marmalyuk, A. V. Ivanov, V. D. Kurnosov, K. V. Kurnosov, M. A. Ladugin, A. V. Lobintsov, A. A. Padalitsa, V. I. Romantsevich, Yu. L. Ryaboshtan, S. M. Sapozhnikov, V. N. Svetogorov, V. A. Simakov, “AlGaInAs/InP semiconductor lasers with an increased electron barrier”, Kvantovaya Elektronika, 49:6 (2019), 519–521 [Quantum Electron., 49:6 (2019), 519–521 ] |
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2018 |
| 10. |
M. A. Ladugin, T. A. Bagaev, A. A. Marmalyuk, Yu. P. Koval', V. P. Konyaev, S. M. Sapozhnikov, A. V. Lobintsov, V. A. Simakov, “Compact laser diode array based on epitaxially integrated AlGaAs/GaAs heterostructures”, Kvantovaya Elektronika, 48:11 (2018), 993–995 [Quantum Electron., 48:11 (2018), 993–995 ] |
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| 11. |
I. I. Zasavitskii, N. Yu. Kovbasa, N. A. Raspopov, A. V. Lobintsov, Yu. V. Kurnyavko, P. V. Gorlachuk, A. B. Krysa, D. G. Revin, “A GaInAs/AlInAs quantum cascade laser with an emission wavelength of 5.6 μm”, Kvantovaya Elektronika, 48:5 (2018), 472–475 [Quantum Electron., 48:5 (2018), 472–475 ] |
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2017 |
| 12. |
M. A. Ladugin, A. A. Marmalyuk, A. A. Padalitsa, K. Yu. Telegin, A. V. Lobintsov, S. M. Sapozhnikov, A. I. Danilov, A. V. Podkopaev, V. A. Simakov, “Laser diode arrays based on AlGaAs/GaAs quantum-well heterostructures with an efficiency up to 62”, Kvantovaya Elektronika, 47:8 (2017), 693–695 [Quantum Electron., 47:8 (2017), 693–695 ] |
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| 13. |
M. A. Ladugin, A. A. Marmalyuk, A. A. Padalitsa, T. A. Bagaev, A. Yu. Andreev, K. Yu. Telegin, A. V. Lobintsov, E. I. Davydova, S. M. Sapozhnikov, A. I. Danilov, A. V. Podkopaev, E. B. Ivanova, V. A. Simakov, “Laser diode bars based on AlGaAs/GaAs quantum-well heterostructures with an efficiency up to 70”, Kvantovaya Elektronika, 47:4 (2017), 291–293 [Quantum Electron., 47:4 (2017), 291–293 ] |
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2016 |
| 14. |
A. V. Ivanov, V. D. Kurnosov, K. V. Kurnosov, Yu. V. Kurnyavko, A. V. Lobintsov, A. S. Meshkov, V. N. Penkin, V. I. Romantsevich, M. B. Uspenskiy, R. V. Chernov, “Analysis of reliability of semiconductor emitters with different designs of cavities”, Zhurnal Tekhnicheskoi Fiziki, 86:10 (2016), 83–88 ; Tech. Phys., 61:10 (2016), 1525–1530 |
| 15. |
I. I. Zasavitskii, A. N. Zubov, A. Yu. Andreev, T. A. Bagaev, P. V. Gorlachuk, M. A. Ladugin, A. A. Padalitsa, A. V. Lobintsov, S. M. Sapozhnikov, A. A. Marmalyuk, “Quantum cascade laser based on GaAs/Al<sub>0.45</sub>Ga<sub>0.55</sub>As heteropair grown by MOCVD”, Kvantovaya Elektronika, 46:5 (2016), 447–450 [Quantum Electron., 46:5 (2016), 447–450 ] |
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2004 |
| 16. |
O. V. Zhuravleva, V. D. Kurnosov, K. V. Kurnosov, A. V. Lobintsov, V. I. Romantsevich, V. A. Simakov, R. V. Chernov, “Study of the spectral and power characteristics of superluminescent diodes”, Kvantovaya Elektronika, 34:1 (2004), 15–19 [Quantum Electron., 34:1 (2004), 15–19 ] |
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2003 |
| 17. |
A. V. Ivanov, V. D. Kurnosov, K. V. Kurnosov, A. V. Lobintsov, V. I. Romantsevich, R. V. Chernov, “Effect of parasitic elements of a ridge laser on its modulation characteristic”, Kvantovaya Elektronika, 33:5 (2003), 425–429 [Quantum Electron., 33:5 (2003), 425–429 ] |
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2001 |
| 18. |
A. Yu. Abazadze, V. V. Bezotosnyi, T. G. Gur'eva, E. I. Davydova, I. D. Zalevskii, G. M. Zverev, A. V. Lobintsov, A. A. Marmalyuk, S. M. Sapozhnikov, V. A. Simakov, M. B. Uspenskiy, V. A. Shishkin, “150-W, 808-nm quasi-cw diode arrays based on AlGaAs/GaAs heterostructures with improved thermal characteristics”, Kvantovaya Elektronika, 31:8 (2001), 659–660 [Quantum Electron., 31:8 (2001), 659–660 ] |
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