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Kvantovaya Elektronika, 2003, Volume 33, Number 5, Pages 425–429 (Mi qe2428)  

This article is cited in 1 scientific paper (total in 1 paper)

Control of laser radiation parameters

Effect of parasitic elements of a ridge laser on its modulation characteristic

A. V. Ivanov, V. D. Kurnosov, K. V. Kurnosov, A. V. Lobintsov, V. I. Romantsevich, R. V. Chernov

Polyus Research and Development Institute named after M. F. Stel'makh, Moscow
Full-text PDF (177 kB) Citations (1)
Abstract: The effect of parasitic elements of a laser on its modulation characteristic is investigated theoretically and experimentally. It is shown that this characteristic depends on the thickness d of the insulating dielectric film, differential resistance Rd, and length L of the laser resonator. For example, at d = 0.15 μm, Rd = 9 Ω, and L = 300 μm, the upper modulation frequency at a level of –3 dB is 500 – 1500 MHz, and at d = 1.2 μm, Rd = 5 Ω, and L = 200 μm, it reaches 12 GHz.
Received: 25.10.2002
English version:
Quantum Electronics, 2003, Volume 33, Issue 5, Pages 425–429
DOI: https://doi.org/10.1070/QE2003v033n05ABEH002428
Bibliographic databases:
Document Type: Article
PACS: 42.55.Px, 42.60.Fc
Language: Russian


Citation: A. V. Ivanov, V. D. Kurnosov, K. V. Kurnosov, A. V. Lobintsov, V. I. Romantsevich, R. V. Chernov, “Effect of parasitic elements of a ridge laser on its modulation characteristic”, Kvantovaya Elektronika, 33:5 (2003), 425–429 [Quantum Electron., 33:5 (2003), 425–429]
Linking options:
  • https://www.mathnet.ru/eng/qe2428
  • https://www.mathnet.ru/eng/qe/v33/i5/p425
  • This publication is cited in the following 1 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    Квантовая электроника Quantum Electronics
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