|
|
|
Publications in Math-Net.Ru |
Citations |
|
2019 |
| 1. |
V. A. Volodin, V. A. Timofeev, A. I. Nikiforov, M. Stoffel, H. Rinnert, M. Vergnat, “Vibrational and light-emitting properties of Si/Si$_{1-x}$Sn$_x$ heterostructures”, Pis'ma v Zh. Èksper. Teoret. Fiz., 109:6 (2019), 371–374   ; JETP Letters, 109:6 (2019), 368–371   |
1
|
|
2018 |
| 2. |
M. Yu. Yesin, A. I. Nikiforov, V. A. Timofeev, A. R. Tuktamyshev, V. I. Mashanov, I. D. Loshkarev, A. S. Deryabin, O. P. Pchelyakov, “Formation of a stepped Si(100) surface and its effect on the growth of Ge islands”, Fizika i Tekhnika Poluprovodnikov, 52:3 (2018), 409–413 ; Semiconductors, 52:3 (2018), 390–393 |
|
2017 |
| 3. |
V. A. Volodin, V. A. Timofeev, A. R. Tuktamyshev, A. I. Nikiforov, “Splitting of frequencies of optical phonons in tensile-strained germanium layers”, Pis'ma v Zh. Èksper. Teoret. Fiz., 105:5 (2017), 305–310 ; JETP Letters, 105:5 (2017), 327–331 |
16
|
| 4. |
A. A. Bloshkin, A. I. Yakimov, V. A. Timofeev, A. R. Tuktamyshev, A. I. Nikiforov, V. V. Murashov, “Valence-band offsets in strained SiGeSn/Si layers with different tin contents”, Fizika i Tekhnika Poluprovodnikov, 51:3 (2017), 342–347 ; Semiconductors, 51:3 (2017), 329–334 |
2
|
|
2016 |
| 5. |
A. F. Zinovieva, V. A. Zinovyev, A. I. Nikiforov, V. A. Timofeev, A. V. Mudryi, A. V. Nenashev, A. V. Dvurechenskii, “Photoluminescence enhancement in double Ge/Si quantum dot structures”, Pis'ma v Zh. Èksper. Teoret. Fiz., 104:12 (2016), 845–848 ; JETP Letters, 104:12 (2016), 823–826 |
13
|
| 6. |
V. A. Timofeev, A. I. Nikiforov, A. R. Tuktamyshev, M. Yu. Yesin, V. I. Mashanov, A. K. Gutakovskii, N. A. Baidakova, “Strained multilayer structures with pseudomorphic GeSiSn layers”, Fizika i Tekhnika Poluprovodnikov, 50:12 (2016), 1610–1614 ; Semiconductors, 50:12 (2016), 1584–1588 |
5
|
|
2014 |
| 7. |
A. I. Yakimov, V. V. Kirienko, V. A. Timofeev, A. V. Dvurechenskii, “Bidirectional photocurrent of holes in layers of Ge/Si quantum dots”, Pis'ma v Zh. Èksper. Teoret. Fiz., 100:2 (2014), 99–103 ; JETP Letters, 100:2 (2014), 91–94 |
3
|
|
2013 |
| 8. |
A. I. Yakimov, V. V. Kirienko, V. A. Timofeev, A. I. Nikiforov, “Intraband optical transitions of holes in strained SiGe quantum wells”, Pis'ma v Zh. Èksper. Teoret. Fiz., 97:3 (2013), 180–184 ; JETP Letters, 97:3 (2013), 159–162 |
3
|
|
2011 |
| 9. |
A. I. Yakimov, V. A. Timofeev, A. I. Nikiforov, A. V. Dvurechenskii, “Antibonding ground state of holes in double vertically coupled Ge/Si quantum dots”, Pis'ma v Zh. Èksper. Teoret. Fiz., 94:10 (2011), 806–810 ; JETP Letters, 94:10 (2011), 744–747 |
9
|
|
| Organisations |
|
| |
|
|
Contact us: