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Fizika i Tekhnika Poluprovodnikov, 2016, Volume 50, Issue 12, Pages 1610–1614
(Mi phts6279)
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This article is cited in 5 scientific papers (total in 5 papers)
XX International Symposium ''Nanophysics and Nanoelectronics'', Nizhny Novgorod, March 14-18, 2016
Strained multilayer structures with pseudomorphic GeSiSn layers
V. A. Timofeeva, A. I. Nikiforovab, A. R. Tuktamysheva, M. Yu. Yesina, V. I. Mashanova, A. K. Gutakovskiia, N. A. Baidakovac a Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
b Tomsk State University
c Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
Abstract:
The temperature and composition dependences of the critical thickness of the 2D–3D transition for a GeSiSn film on Si(100) have been studied. The regularities of the formation of multilayer structures with pseudomorphic GeSiSn layers directly on a Si substrate, without relaxed buffer layers, were investigated for the first time. The possibility of forming multilayer structures based on pseudomorphic GeSiSn layers has been shown and the lattice parameters have been determined using transmission electron microscopy. The grown structures demonstrate photoluminescence for Sn contents from 3.5 to 5% in GeSiSn layers.
Received: 27.04.2016 Accepted: 10.05.2016
Citation:
V. A. Timofeev, A. I. Nikiforov, A. R. Tuktamyshev, M. Yu. Yesin, V. I. Mashanov, A. K. Gutakovskii, N. A. Baidakova, “Strained multilayer structures with pseudomorphic GeSiSn layers”, Fizika i Tekhnika Poluprovodnikov, 50:12 (2016), 1610–1614; Semiconductors, 50:12 (2016), 1584–1588
Linking options:
https://www.mathnet.ru/eng/phts6279 https://www.mathnet.ru/eng/phts/v50/i12/p1610
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