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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2016, Volume 104, Issue 12, Pages 845–848
DOI: https://doi.org/10.7868/S0370274X16240012
(Mi jetpl5137)
 

This article is cited in 14 scientific papers (total in 14 papers)

OPTICS AND NUCLEAR PHYSICS

Photoluminescence enhancement in double Ge/Si quantum dot structures

A. F. Zinovievaa, V. A. Zinovyeva, A. I. Nikiforova, V. A. Timofeeva, A. V. Mudryib, A. V. Nenashevca, A. V. Dvurechenskiica

a Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia
b Scientific–Practical Material Research Centre, National Academy of Sciences of Belarus, Minsk, Belarus
c Novosibirsk State University, Novosibirsk, Russia
References:
Abstract: The luminescence properties of double Ge/Si quantum dot structures are studied at liquid helium temperature depending on the Si spacer thickness $d$ in QD molecules. A seven-fold increase in the integrated photoluminescence intensity is obtained for the structures with optimal thickness $d=2$ nm. This enhancement is explained by increasing the overlap integral of electron and hole wavefunctions. Two main factors promote this increasing. The first one is that the electrons are localized at the QD base edges and their wavefunctions are the linear combinations of the states of in-plane $\Delta$ valleys, which are perpendicular in $k$-space to the growth direction $[001]$. This results in the increasing probability of electron penetration into Ge barriers. The second factor is the arrangement of Ge nanoclusters in closely spaced QD groups. The strong tunnel coupling of QDs within these groups increases the probability of hole finding at the QD base edge, that also promotes the increase in the radiative recombination probability.
Funding agency Grant number
Russian Foundation for Basic Research 16-29-14031_îôè_ì
16-52-00160_áåë_à
Belarusian Republican Foundation for Fundamental Research Ô16Ð-061
Received: 14.10.2016
Revised: 03.11.2016
English version:
Journal of Experimental and Theoretical Physics Letters, 2016, Volume 104, Issue 12, Pages 823–826
DOI: https://doi.org/10.1134/S0021364016240061
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: A. F. Zinovieva, V. A. Zinovyev, A. I. Nikiforov, V. A. Timofeev, A. V. Mudryi, A. V. Nenashev, A. V. Dvurechenskii, “Photoluminescence enhancement in double Ge/Si quantum dot structures”, Pis'ma v Zh. Èksper. Teoret. Fiz., 104:12 (2016), 845–848; JETP Letters, 104:12 (2016), 823–826
Citation in format AMSBIB
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  • This publication is cited in the following 14 articles:
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