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This article is cited in 13 scientific papers (total in 13 papers)
OPTICS AND NUCLEAR PHYSICS
Photoluminescence enhancement in double Ge/Si quantum dot structures
A. F. Zinovievaa, V. A. Zinovyeva, A. I. Nikiforova, V. A. Timofeeva, A. V. Mudryib, A. V. Nenashevca, A. V. Dvurechenskiica a Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia
b Scientific–Practical Material Research Centre, National Academy of Sciences of Belarus, Minsk, Belarus
c Novosibirsk State University, Novosibirsk, Russia
Abstract:
The luminescence properties of double Ge/Si quantum dot structures are studied at liquid helium temperature depending on the Si spacer thickness $d$ in QD molecules. A seven-fold increase in the integrated photoluminescence intensity is obtained for the structures with optimal thickness $d=2$ nm. This enhancement is explained by increasing the overlap integral of electron and hole wavefunctions. Two main factors promote this increasing. The first one is that the electrons are localized at the QD base edges and their wavefunctions are the linear combinations of the states of in-plane $\Delta$ valleys, which are perpendicular in $k$-space to the growth direction $[001]$. This results in the increasing probability of electron penetration into Ge barriers. The second factor is the arrangement of Ge nanoclusters in closely spaced QD groups. The strong tunnel coupling of QDs within these groups increases the probability of hole finding at the QD base edge, that also promotes the increase in the radiative recombination probability.
Received: 14.10.2016 Revised: 03.11.2016
Citation:
A. F. Zinovieva, V. A. Zinovyev, A. I. Nikiforov, V. A. Timofeev, A. V. Mudryi, A. V. Nenashev, A. V. Dvurechenskii, “Photoluminescence enhancement in double Ge/Si quantum dot structures”, Pis'ma v Zh. Èksper. Teoret. Fiz., 104:12 (2016), 845–848; JETP Letters, 104:12 (2016), 823–826
Linking options:
https://www.mathnet.ru/eng/jetpl5137 https://www.mathnet.ru/eng/jetpl/v104/i12/p845
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Abstract page: | 203 | Full-text PDF : | 22 | References: | 33 | First page: | 12 |
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