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Publications in Math-Net.Ru |
Citations |
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2020 |
1. |
Yu. N. Drozdov, S. A. Kraev, A. I. Okhapkin, V. M. Daniltsev, E. V. Skorokhodov, “Features of the vapor-phase epitaxy of GaAs on nonplanar substrates”, Fizika i Tekhnika Poluprovodnikov, 54:9 (2020), 958–961 ; Semiconductors, 54:9 (2020), 1147–1149 |
2. |
P. A. Yunin, A. I. Okhapkin, M. N. Drozdov, S. A. Korolev, E. A. Arkhipova, S. A. Kraev, Yu. N. Drozdov, V. I. Shashkin, D. B. Radishev, “Modification of the ratio between $sp^2/sp^3$-hybridized carbon components in PECVD diamond-like films”, Fizika i Tekhnika Poluprovodnikov, 54:9 (2020), 855–858 ; Semiconductors, 54:9 (2020), 1047–1050 |
3. |
M. N. Drozdov, E. A. Arkhipova, Yu. N. Drozdov, S. A. Kraev, V. I. Shashkin, A. E. Parafin, M. A. Lobaev, A. L. Vikharev, A. M. Gorbachev, D. B. Radishev, V. A. Isaev, S. A. Bogdanov, “The use of pulsed laser annealing to form ohmic Mo/Ti contacts to diamond”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:11 (2020), 34–38 ; Tech. Phys. Lett., 46:6 (2020), 551–555 |
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4. |
M. N. Drozdov, Yu. N. Drozdov, A. I. Okhapkin, P. A. Yunin, O. A. Streletskii, A. E. Ieshkin, “SIMS analysis of carbon-containing materials: content of carbon atoms in $sp^{2}$ and $sp^{3}$ hybridization states”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:6 (2020), 38–42 ; Tech. Phys. Lett., 46:3 (2020), 290–294 |
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2019 |
5. |
M. N. Drozdov, E. V. Demidov, Yu. N. Drozdov, S. A. Kraev, V. I. Shashkin, E. A. Arkhipova, M. A. Lobaev, A. L. Vikharev, A. M. Gorbachev, D. B. Radishev, V. A. Isaev, S. A. Bogdanov, “Formation of low-resistivity Au/Mo/Ti ohmic contacts to $p$-diamond epitaxial layers”, Zhurnal Tekhnicheskoi Fiziki, 89:12 (2019), 1923–1932 ; Tech. Phys., 64:12 (2019), 1827–1836 |
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6. |
M. N. Drozdov, Yu. N. Drozdov, A. I. Okhapkin, S. A. Kraev, M. A. Lobaev, “A new approach to tof-sims analysis of the phase composition of carbon-containing materials”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:2 (2019), 50–54 ; Tech. Phys. Lett., 45:1 (2019), 48–52 |
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2018 |
7. |
Yu. N. Drozdov, O. I. Khrykin, P. A. Yunin, “Verification of the hypothesis on the thermoelastic nature of deformation of $a$(0001)GaN layer grown on the sapphire $a$-cut”, Fizika i Tekhnika Poluprovodnikov, 52:11 (2018), 1380–1383 ; Semiconductors, 52:11 (2018), 1491–1494 |
8. |
P. A. Yunin, P. V. Volkov, Yu. N. Drozdov, A. V. Koliadin, S. A. Korolev, D. B. Radishev, E. A. Surovegina, V. I. Shashkin, “Study of the structural and morphological properties of HPHT diamond substrates”, Fizika i Tekhnika Poluprovodnikov, 52:11 (2018), 1321–1325 ; Semiconductors, 52:11 (2018), 1432–1436 |
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9. |
P. A. Yunin, Yu. N. Drozdov, O. I. Khrykin, V. A. Grigoryev, “Investigation of the anisotropy of the structural properties of GaN(0001) layers grown by MOVPE on $a$-plane (11$\bar2$0) sapphire”, Fizika i Tekhnika Poluprovodnikov, 52:11 (2018), 1300–1303 ; Semiconductors, 52:11 (2018), 1412–1415 |
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10. |
M. N. Drozdov, Yu. N. Drozdov, A. V. Novikov, P. A. Yunin, D. V. Yurasov, “A new limitation of the depth resolution in tof-sims elemental profiling: the influence of a probing ion beam”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:8 (2018), 11–19 ; Tech. Phys. Lett., 44:4 (2018), 320–323 |
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11. |
M. N. Drozdov, Yu. N. Drozdov, M. A. Lobaev, P. A. Yunin, “New cluster secondary ions for quantitative analysis of the concentration of boron atoms in diamond by time-of-flight secondary-ion mass spectrometry”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:7 (2018), 52–60 ; Tech. Phys. Lett., 44:4 (2018), 297–300 |
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2017 |
12. |
M. N. Drozdov, V. M. Daniltsev, Yu. N. Drozdov, O. I. Khrykin, P. A. Yunin, “Selective analysis of the elemental composition of InGaAs/GaAs nanoclusters by secondary ion mass spectrometry”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:10 (2017), 50–59 ; Tech. Phys. Lett., 43:5 (2017), 477–480 |
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2016 |
13. |
P. A. Yunin, Yu. N. Drozdov, V. V. Chernov, V. A. Isaev, S. A. Bogdanov, A. B. Muchnikov, “Formation of singular (001) terraces on the surface of single-crystal HPHT diamond substrates”, Fizika i Tekhnika Poluprovodnikov, 50:12 (2016), 1647–1651 ; Semiconductors, 50:12 (2016), 1622–1625 |
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14. |
V. M. Daniltsev, E. V. Demidov, M. N. Drozdov, Yu. N. Drozdov, S. A. Kraev, E. A. Surovegina, V. I. Shashkin, P. A. Yunin, “Heavily doped GaAs:Te layers grown by MOVPE using diisopropyl telluride as a source”, Fizika i Tekhnika Poluprovodnikov, 50:11 (2016), 1459–1462 ; Semiconductors, 50:11 (2016), 1439–1442 |
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15. |
M. N. Drozdov, Yu. N. Drozdov, P. A. Yunin, P. I. Folomin, A. B. Gritsenko, V. L. Kryukov, E. V. Kryukov, “Extremely deep profiling analysis of the atomic composition of thick ($>$ 100 $\mu$m) GaAs layers within power PIN diodes by secondary ion mass spectrometry”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:15 (2016), 27–35 ; Tech. Phys. Lett., 42:8 (2016), 783–787 |
16. |
M. N. Drozdov, Yu. N. Drozdov, A. V. Novikov, P. A. Yunin, D. V. Yurasov, “Nonlinear calibration curves in secondary ion mass spectrometry for quantitative analysis of gesi heterostructures with nanoclusters”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:5 (2016), 40–48 ; Tech. Phys. Lett., 42:3 (2016), 243–247 |
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2009 |
17. |
P. G. Sennikov, S. V. Golubev, V. I. Shashkin, D. A. Pryakhin, M. N. Drozdov, B. A. Andreev, Yu. N. Drozdov, A. S. Kuznetsov, H. Pol, “Production of nanocrystalline silicon layers using the plasma enhanced chemical vapor deposition from the gas phase of silicon tetrafluoride”, Pis'ma v Zh. Èksper. Teoret. Fiz., 89:2 (2009), 80–83 ; JETP Letters, 89:2 (2009), 73–75 |
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2002 |
18. |
N. V. Vostokov, Yu. N. Drozdov, Z. F. Krasil'nik, D. N. Lobanov, A. V. Novikov, A. N. Yablonskii, “Low-energy photoluminescence of structures with GeSi/Si(001) self-assembled nanoislands”, Pis'ma v Zh. Èksper. Teoret. Fiz., 76:6 (2002), 425–429 ; JETP Letters, 76:6 (2002), 365–369 |
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1990 |
19. |
L. K. Orlov, O. A. Kuznetsov, Yu. N. Drozdov, R. A. Rubtsova, Yu. A. Romanov, A. L. Chernov, “Energy diagrams and electrical characteristics of stressed-layer $\mathrm{Ge}$–$\mathrm{Ge}_{1-x}\mathrm{Si}_{x}$ superlattices”, Fizika Tverdogo Tela, 32:7 (1990), 1933–1940 |
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1987 |
20. |
L. K. Orlov, O. A. Kuznetsov, Yu. N. Drozdov, “Spectra of Light Electroreflection from the Surface of Ge$-$Ge$_{1-x}$Si$_{x}$ Superlattices”, Fizika i Tekhnika Poluprovodnikov, 21:11 (1987), 1962–1967 |
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1986 |
21. |
L. K. Orlov, O. A. Kuznetsov, Yu. N. Drozdov, “Spectra of Light Electroreflection from Ge$_{1-x_{1}}$Si$_{x_{1}}{-}$Ge$_{1-x_{2}}$Si$_{x_{2}}$ Periodic Structures with
Hyperfine Layers”, Fizika i Tekhnika Poluprovodnikov, 20:1 (1986), 118–122 |
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1980 |
22. |
V. A. Lebedev, E. A. Soldatov, Yu. N. Drozdov, È. A. Kuz'min, V. V. Ilyukhin, N. V. Belov, “An algebraic method of superposition function construction”, Dokl. Akad. Nauk SSSR, 251:2 (1980), 350–352 |
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1979 |
23. |
E. A. Soldatov, Yu. N. Drozdov, V. V. Ilyukhin, È. A. Kuz'min, N. V. Belov, “On the determination of coefficients of the characteristic equation in the problem of decomposition of a noise-distorted
function into a sum of exponents”, Dokl. Akad. Nauk SSSR, 248:6 (1979), 1341–1343 |
24. |
V. A. Lebedev, Yu. N. Drozdov, È. A. Kuz'min, A. V. Ganyushkin, V. A. Yablokov, N. V. Belov, “Crystal structure of triphenyl (triphenylgermylperoxy) silane,
$(\mathrm{C}_6\mathrm{H}_5)_3\mathrm{GeOOSi}(\mathrm{C}_6\mathrm{H}_5)_3$”, Dokl. Akad. Nauk SSSR, 246:3 (1979), 601–605 |
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1978 |
25. |
E. A. Soldatov, V. A. Lebedev, Yu. N. Drozdov, È. A. Kuz'min, V. V. Ilyukhin, N. V. Belov, “A new method of the construction of crystal vector systems without the Fourier series calculation”, Dokl. Akad. Nauk SSSR, 242:2 (1978), 344–346 |
26. |
E. N. Soldatov, T. B. Vorotilina, Yu. N. Drozdov, V. V. Ilyukhin, È. A. Kuz'min, I. V. Tananaev, “On crystal structure of ammonium monoaquapentafluorogallate,
$(\mathrm{NH}_4)_2\mathrm{GaF}_5\cdot\mathrm{H}_2\mathrm{O}$”, Dokl. Akad. Nauk SSSR, 241:2 (1978), 357–359 |
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1975 |
27. |
E. A. Soldatov, Yu. N. Drozdov, È. A. Kuz'min, N. V. Belov, “On the solution to Patterson integral equation (for an ideal case of nonperiodic electron density)”, Dokl. Akad. Nauk SSSR, 225:1 (1975), 91–93 |
28. |
È. A. Kuz'min, Yu. N. Drozdov, V. V. Ilyukhin, N. V. Belov, “Analytic representation of the algorithm of search for the linear chain of peaks and interaction parallelograms in Patterson function”, Dokl. Akad. Nauk SSSR, 220:6 (1975), 1312–1315 |
29. |
È. A. Kuz'min, Yu. N. Drozdov, V. V. Ilyukhin, N. V. Belov, “A new (analytic) representation of the process of Patterson function deciphering according to separation functions”, Dokl. Akad. Nauk SSSR, 220:3 (1975), 588–591 |
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1974 |
30. |
Yu. N. Drozdov, È. A. Kuz'min, V. V. Ilyukhin, N. V. Belov, “Deciphering of crystalline structure of
$\mathrm{Na}_{11}\mathrm{Nb}_2\mathrm{Ti}[\mathrm{Si}_2\mathrm{O}_7]_2
[\mathrm{PO}_4]_2\mathrm{O}_3\mathrm{F}$ by the method of vector subsystems”, Dokl. Akad. Nauk SSSR, 217:3 (1974), 569–572 |
31. |
Yu. N. Drozdov, N. G. Batalieva, A. A. Voronkov, È. A. Kuz'min, “Crystalline structure of $\mathrm{Na}_{11}\mathrm{Nb}_2\mathrm{TiSi}_4\mathrm{P}_2\mathrm{O}_{25}\mathrm{F}$”, Dokl. Akad. Nauk SSSR, 216:1 (1974), 78–81 |
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1973 |
32. |
Yu. N. Drozdov, È. A. Kuz'min, N. V. Belov, “Crystalline structure of silver vanadate, $\mathrm{Ag}_{2-x}\mathrm{V}_4\mathrm{O}_{10}$ ($x=0,57$)”, Dokl. Akad. Nauk SSSR, 210:2 (1973), 339–341 |
33. |
È. A. Kuz'min, Yu. N. Drozdov, V. V. Ilyukhin, N. V. Belov, “Analysis of Patterson's function. Vector subsystems responding to several multiple peaks (sets of isolated segments)”, Dokl. Akad. Nauk SSSR, 209:2 (1973), 344–347 |
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1970 |
34. |
V. P. Golovachev, Yu. N. Drozdov, È. A. Kuz'min, N. V. Belov, “Crystalline structure of fenaksite $\mathrm{FeNaK}[\mathrm{Si}_4\mathrm{O}_{10}]$
($\mathrm{KNaFe}[\mathrm{Si}_4\mathrm{O}_{10}]$)”, Dokl. Akad. Nauk SSSR, 194:4 (1970), 818–820 |
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Organisations |
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