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Fizika i Tekhnika Poluprovodnikov, 2018, Volume 52, Issue 11, Pages 1321–1325
DOI: https://doi.org/10.21883/FTP.2018.11.46592.14 (Mi phts5689) 		 
This article is cited in 6 scientific papers (total in 6 papers)

XXII International symposium ''Nanophysics and Nanoelectronics'', Nizhny novgorod, March, 12-15, 2018

Study of the structural and morphological properties of HPHT diamond substrates

P. A. Yunina, P. V. Volkova, Yu. N. Drozdova, A. V. Koliadinb, S. A. Koroleva, D. B. Radishevc, E. A. Suroveginaa, V. I. Shashkina

a Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
b New Diamond Technology LLC, St. Petersburg, Russia
c Institute of Applied Physics, Russian Academy of Sciences, Nizhny Novgorod
Full-text PDF (609 kB) Citations (6)
DOI: https://doi.org/10.21883/FTP.2018.11.46592.14
Abstract: The morphological and structural properties of a series of high-pressure high-temperature (HPHT) single-crystal diamond substrates are comprehensively studied by white-light optical interference microscopy, atomic-force microscopy, and X-ray diffraction analysis. Procedures that provide a means for characterizing the substrate parameters most critical for epitaxial application with the laboratory equipment are described. It is shown that the jewelry-type characterization of diamond substrates is insufficient to assess the possibility of their use for the epitaxial growth of chemical-vapor-deposited (CVD) diamond.
Keywords: High Pressure-high Temperature (HPHT), Single-crystal Diamond Substrates, HPHT Diamond, Epitaxial Growth, Miscut Angle.
Funding agency Grant number
Russian Science Foundation 17-19-01580
Received: 25.04.2018
Accepted: 07.05.2018
English version:
Semiconductors, 2018, Volume 52, Issue 11, Pages 1432–1436
DOI: https://doi.org/10.1134/S1063782618110271
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: P. A. Yunin, P. V. Volkov, Yu. N. Drozdov, A. V. Koliadin, S. A. Korolev, D. B. Radishev, E. A. Surovegina, V. I. Shashkin, “Study of the structural and morphological properties of HPHT diamond substrates”, Fizika i Tekhnika Poluprovodnikov, 52:11 (2018), 1321–1325; Semiconductors, 52:11 (2018), 1432–1436
Citation in format AMSBIB
\Bibitem{YunVolDro18}
\by P.~A.~Yunin, P.~V.~Volkov, Yu.~N.~Drozdov, A.~V.~Koliadin, S.~A.~Korolev, D.~B.~Radishev, E.~A.~Surovegina, V.~I.~Shashkin
\paper Study of the structural and morphological properties of HPHT diamond substrates
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2018
\vol 52
\issue 11
\pages 1321--1325
\mathnet{http://mi.mathnet.ru/phts5689}
\crossref{https://doi.org/10.21883/FTP.2018.11.46592.14}
\elib{https://elibrary.ru/item.asp?id=36903607}
\transl
\jour Semiconductors
\yr 2018
\vol 52
\issue 11
\pages 1432--1436
\crossref{https://doi.org/10.1134/S1063782618110271}
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    • This publication is cited in the following 6 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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