Production of nanocrystalline silicon layers using the plasma enhanced chemical vapor deposition from the gas phase of silicon tetrafluoride

The production of silicon layers using plasma enhanced chemical vapor deposition in the mixture of silicon tetrafluoride and hydrogen is reported. The samples have been analyzed by X-ray diffraction, Raman spectroscopy, and secondary ion mass spectrometry. The phase composition of the layers is nanocrystalline silicon with the crystalline-domain sizes from 3 to 9 nm in dependence of the conditions of the process. The samples are characterized by intense photoluminescence at room temperature.