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This article is cited in 1 scientific paper (total in 1 paper)
New cluster secondary ions for quantitative analysis of the concentration of boron atoms in diamond by time-of-flight secondary-ion mass spectrometry
M. N. Drozdova, Yu. N. Drozdova, M. A. Lobaevb, P. A. Yuninac a Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
b Institute of Applied Physics, Russian Academy of Sciences, Nizhny Novgorod
c Lobachevsky State University of Nizhny Novgorod
Abstract:
A new approach to quantitative analysis of the concentration of boron atoms in diamond using secondary ion mass spectrometers with time-of-flight mass analyzers is proposed. Along with the known boron-containing lines (B, BC, BC$_2$), many lines related to cluster secondary ions BC$_ N$ have been found in the mass spectrum; their intensity increases by one or two orders of magnitude when Bi$_3$ probe ions are used. Lines BC$_{4}$, BC$_{6}$, BC$_{2}$, and BC$_{8}$ have the highest intensity (in the descending order); when they are summed, the sensitivity increases by an order of magnitude in comparison with the known mode of detecting BC$_2$. The parameters of the boron $\delta$-layer in single-crystal diamond films grown under optimal conditions have been measured to be unprecedented: the $\delta$-layer width is about 2 nm, and the concentration is 6.4 $\times$ 10$^{20}$ cm$^{-3}$ (the boron concentrations for doped and undoped diamonds differ by four orders of magnitude).
Received: 17.11.2017
Citation:
M. N. Drozdov, Yu. N. Drozdov, M. A. Lobaev, P. A. Yunin, “New cluster secondary ions for quantitative analysis of the concentration of boron atoms in diamond by time-of-flight secondary-ion mass spectrometry”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:7 (2018), 52–60; Tech. Phys. Lett., 44:4 (2018), 297–300
Linking options:
https://www.mathnet.ru/eng/pjtf5845 https://www.mathnet.ru/eng/pjtf/v44/i7/p52
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