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Fizika i Tekhnika Poluprovodnikov, 2018, Volume 52, Issue 11, Pages 1300–1303
DOI: https://doi.org/10.21883/FTP.2018.11.46587.09 (Mi phts5684) 		 
This article is cited in 1 scientific paper (total in 1 paper)

XXII International symposium ''Nanophysics and Nanoelectronics'', Nizhny novgorod, March, 12-15, 2018

Investigation of the anisotropy of the structural properties of GaN(0001) layers grown by MOVPE on $a$-plane (11$\bar2$0) sapphire

P. A. Yuninab, Yu. N. Drozdova, O. I. Khrykina, V. A. Grigoryevb

a Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
b Lobachevsky State University of Nizhny Novgorod
Full-text PDF (367 kB) Citations (1)
DOI: https://doi.org/10.21883/FTP.2018.11.46587.09
Abstract: The structural properties of GaN(0001) heteroepitaxial layers grown by metalorganic vapor phase epitaxy (MOVPE) on $a$-plane (11$\bar2$0) sapphire substrates are investigated by X-ray diffractometry. Anisotropy of the rocking-curve width for the symmetric (0004) and asymmetric $\{11\bar24\}$ and $\{10\bar15\}$ reflections of gallium nitride upon rotation of the sample is observed. A comparison of the anisotropy of the rocking-curve width for (0001)GaN/(11$\bar2$0)Al$_{2}$O$_{3}$ layers with two different variants of in-plane orientation relationships suggests that the anisotropy of the structural properties is independent of the thermoelastic stress arising upon cooling the heterostructure.
Keywords: Metalorganic Vapor Phase Epitaxy (MOVPE), Gallium Nitride, Orientation Relationship, RC Width, Sapphire Substrate.
Funding agency Grant number
Russian Science Foundation 17-72-10166
Received: 25.04.2018
Accepted: 07.05.2018
English version:
Semiconductors, 2018, Volume 52, Issue 11, Pages 1412–1415
DOI: https://doi.org/10.1134/S106378261811026X
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: P. A. Yunin, Yu. N. Drozdov, O. I. Khrykin, V. A. Grigoryev, “Investigation of the anisotropy of the structural properties of GaN(0001) layers grown by MOVPE on $a$-plane (11$\bar2$0) sapphire”, Fizika i Tekhnika Poluprovodnikov, 52:11 (2018), 1300–1303; Semiconductors, 52:11 (2018), 1412–1415
Citation in format AMSBIB
\Bibitem{YunDroKhr18}
\by P.~A.~Yunin, Yu.~N.~Drozdov, O.~I.~Khrykin, V.~A.~Grigoryev
\paper Investigation of the anisotropy of the structural properties of GaN(0001) layers grown by MOVPE on $a$-plane (11$\bar2$0) sapphire
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2018
\vol 52
\issue 11
\pages 1300--1303
\mathnet{http://mi.mathnet.ru/phts5684}
\crossref{https://doi.org/10.21883/FTP.2018.11.46587.09}
\elib{https://elibrary.ru/item.asp?id=36903602}
\transl
\jour Semiconductors
\yr 2018
\vol 52
\issue 11
\pages 1412--1415
\crossref{https://doi.org/10.1134/S106378261811026X}
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    • This publication is cited in the following 1 articles:
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