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Publications in Math-Net.Ru |
Citations |
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2021 |
| 1. |
D. V. Gulyaev, D. V. Dmitriev, N. V. Fateev, D. Yu. Protasov, A. S. Kozhukhov, K. S. Zhuravlev, “GaAs/AlGaAs- and InGaAs/AlGaAs heterostructures for high-power semiconductor infrared emitters”, Zhurnal Tekhnicheskoi Fiziki, 91:11 (2021), 1727–1731   |
| 2. |
K. S. Zhuravlev, A. M. Gilinskii, I. B. Chistokhin, N. A. Valisheva, D. V. Dmitriev, A. I. Toropov, M. S. Aksenov, A. L. Chizh, K. B. Mikitchuk, “High-power microwave photodiodes based on MBE-grown InAlAs/InGaAs heterostructures”, Zhurnal Tekhnicheskoi Fiziki, 91:7 (2021), 1158–1163 ; Tech. Phys., 66:9 (2021), 1072–1077  |
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| 3. |
D. V. Dmitriev, D. A. Kolosovsky, E. V. Fedosenko, A. I. Toropov, K. S. Zhuravlev, “Substitution of phosphorus at the InP(001) surface upon annealing in an arsenic flux”, Fizika i Tekhnika Poluprovodnikov, 55:10 (2021), 877–881 ; Semiconductors, 55:11 (2021), 823–837 |
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2020 |
| 4. |
A. P. Kovchavtsev, M. S. Aksenov, A. E. Nastovjak, N. A. Valisheva, D. V. Gorshkov, G. Yu. Sidorov, D. V. Dmitriev, “Study of the density of interface states at the insulator/In$_{0.52}$Al$_{0.48}$As interface”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:10 (2020), 10–13 ; Tech. Phys. Lett., 46:5 (2020), 469–472 |
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2019 |
| 5. |
I. A. Derebezov, V. A. Gaisler, A. V. Gaisler, D. V. Dmitriev, A. I. Toropov, M. von Helversen, C. de la Haye, S. Bounouar, S. Reitzenstein, “Non-classical light sources based on selectively positioned deterministic microlenses structures and (111) In(Ga)As quantum dots”, Fizika i Tekhnika Poluprovodnikov, 53:10 (2019), 1338–1342 ; Semiconductors, 53:10 (2019), 1304–1307 |
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| 6. |
A. L. Chizh, K. B. Mikitchuk, K. S. Zhuravlev, D. V. Dmitriev, A. I. Toropov, N. A. Valisheva, M. S. Aksenov, A. M. Gilinskii, I. B. Chistokhin, “High-power high-speed Schottky photodiodes for analog fiber-optic microwave signal transmission lines”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:14 (2019), 52–54 ; Tech. Phys. Lett., 45:7 (2019), 739–741 |
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| 7. |
I. B. Chistokhin, M. S. Aksenov, N. A. Valisheva, D. V. Dmitriev, I. V. Marchishin, A. I. Toropov, K. S. Zhuravlev, “The influence of the InAlAs layer surface morphology on the temperature dependence of parameters of Au/Ti/$n$-InAlAs (001) Schottky diodes”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:4 (2019), 59–62 ; Tech. Phys. Lett., 45:2 (2019), 180–184 |
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2018 |
| 8. |
I. A. Derebezov, V. A. Gaisler, A. V. Gaisler, D. V. Dmitriev, A. I. Toropov, M. Von Helversen, C. De la Haye, S. Bounouar, S. Reitzenstein, “Spectroscopy of single AlInAs and (111)-oriented InGaAs quantum dots”, Fizika i Tekhnika Poluprovodnikov, 52:11 (2018), 1326–1330 ; Semiconductors, 52:11 (2018), 1437–1441 |
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2017 |
| 9. |
A. V. Gaisler, I. A. Derebezov, V. A. Gaisler, D. V. Dmitriev, A. I. Toropov, A. S. Kozhukhov, D. V. Shcheglov, A. V. Latyshev, A. L. Aseev, “AlInAs quantum dots”, Pis'ma v Zh. Èksper. Teoret. Fiz., 105:2 (2017), 93–99 ; JETP Letters, 105:2 (2017), 103–109  |
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| 10. |
I. A. Derebezov, V. A. Gaisler, A. V. Gaisler, D. V. Dmitriev, A. I. Toropov, S. Fischbach, A. Schlehahn, A. Kaganskiy, T. Heindel, S. Bounouar, S. Rodt, S. Reitzenstein, “Subminiature emitters based on a single (111) In(Ga)As quantum dot and hybrid microcavity”, Fizika i Tekhnika Poluprovodnikov, 51:11 (2017), 1451–1455 ; Semiconductors, 51:11 (2017), 1399–1402 |
| 11. |
I. B. Chistokhin, M. S. Aksenov, N. A. Valisheva, D. V. Dmitriev, K. S. Zhuravlev, A. A. Guzev, “Features of current flow in structures based on Au/Ti/$n$-InAlAs Schottky barriers”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:12 (2017), 83–89 ; Tech. Phys. Lett., 43:6 (2017), 581–583 |
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2014 |
| 12. |
A. A. Lyamkina, S. P. Moshchenko, D. V. Dmitriev, A. I. Toropov, T. S. Shamirzaev, “Exciton-plasmon interaction in hybrid quantum dot/metal cluster structures fabricated by molecular-beam epitaxy”, Pis'ma v Zh. Èksper. Teoret. Fiz., 99:4 (2014), 245–249 ; JETP Letters, 99:4 (2014), 219–223 |
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2013 |
| 13. |
Z. D. Kvon, D. A. Kozlov, S. N. Danilov, C. Zoth, P. Vierling, S. Stachel, V. V. Bel'kov, A. K. Bakarov, D. V. Dmitriev, A. I. Toropov, S. D. Ganichev, “Terahertz radiation-induced magnetoresistance oscillations of a high-density and high-mobility two-dimensional electron gas”, Pis'ma v Zh. Èksper. Teoret. Fiz., 97:1 (2013), 45–48 ; JETP Letters, 97:1 (2013), 41–44 |
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2012 |
| 14. |
D. V. Dmitriev, I. S. Strygin, A. A. Bykov, S. Dietrich, S. A. Vitkalov, “Transport relaxation time and quantum lifetime in selectively doped GaAs/AlAs heterostructures”, Pis'ma v Zh. Èksper. Teoret. Fiz., 95:8 (2012), 467–471 ; JETP Letters, 95:8 (2012), 420–423 |
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2011 |
| 15. |
T. S. Shamirzaev, D. V. Dmitriev, L. L. Sveshnikova, P. Tronc, “Nonradiative exciton transfer by the Förster mechanism from InAs/AlAs quantum dots to dye molecules in hybrid structures”, Pis'ma v Zh. Èksper. Teoret. Fiz., 94:10 (2011), 828–831 ; JETP Letters, 94:10 (2011), 764–767 |
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| 16. |
O. E. Tereshchenko, D. V. Dmitriev, A. I. Toropov, S. V. Eremeev, S. E. Kul'kova, “Surfactant properties of cesium in molecular beam epitaxy of GaAs(100)”, Pis'ma v Zh. Èksper. Teoret. Fiz., 93:10 (2011), 647–652 ; JETP Letters, 93:10 (2011), 585–590 |
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2007 |
| 17. |
Yu. G. Galitsyn, D. V. Dmitriev, V. G. Mansurov, S. P. Moshchenko, A. I. Toropov, “Role of lateral interaction in the homoepitaxy of GaAs on the (001)-$\beta(2\times 4)$ surface”, Pis'ma v Zh. Èksper. Teoret. Fiz., 86:7 (2007), 553–557 ; JETP Letters, 86:7 (2007), 482–486 |
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2006 |
| 18. |
Yu. G. Galitsyn, D. V. Dmitriev, V. G. Mansurov, S. P. Moshchenko, A. I. Toropov, “Asymmetric <i>c</i>(4×4) → γ(2×4) reconstruction phase transition on the (001)GaAs surface”, Pis'ma v Zh. Èksper. Teoret. Fiz., 84:9 (2006), 596–600 ; JETP Letters, 84:9 (2006), 505–508 |
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2005 |
| 19. |
Yu. G. Galitsyn, D. V. Dmitriev, V. G. Mansurov, S. P. Moshchenko, A. I. Toropov, “Critical phenomena in the β-(2×4) → α-(2×4) reconstruction transition on the (001) GaAs surface”, Pis'ma v Zh. Èksper. Teoret. Fiz., 81:12 (2005), 766–770 ; JETP Letters, 81:12 (2005), 629–633 |
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