|
This article is cited in 11 scientific papers (total in 11 papers)
High-power high-speed Schottky photodiodes for analog fiber-optic microwave signal transmission lines
A. L. Chizha, K. B. Mikitchuka, K. S. Zhuravlevbc, D. V. Dmitrievbc, A. I. Toropovb, N. A. Valishevab, M. S. Aksenovb, A. M. Gilinskiib, I. B. Chistokhinb a SSPA Optics, Optoelectronics, and Laser Technology, National Academy of Sciences of Belarus, Minsk, Belarus
b Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
c Novosibirsk State University
Abstract:
Design and manufacturing technology of high-power microwave Schottky photodiodes with microstripe leads have been developed based on an InAlAs/InGaAs heterostructure. The operating frequency of photodiodes with a mesa diameter of 15 $\mu$m is above 25 GHz and a maximum output microwave power at 20 GHz exceeds 50 mW, which allows these photodiodes to be employed in analog fiber-optic microwave signal transmission lines, as well as for the microwave signal generation and processing by optical methods in remote sensing and measuring microwave technology.
Keywords:
high-power microwave photodiodes, Schottky barrier, InAlAs/InGaAs heterostructures.
Received: 04.03.2019 Revised: 17.04.2019 Accepted: 17.04.2019
Citation:
A. L. Chizh, K. B. Mikitchuk, K. S. Zhuravlev, D. V. Dmitriev, A. I. Toropov, N. A. Valisheva, M. S. Aksenov, A. M. Gilinskii, I. B. Chistokhin, “High-power high-speed Schottky photodiodes for analog fiber-optic microwave signal transmission lines”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:14 (2019), 52–54; Tech. Phys. Lett., 45:7 (2019), 739–741
Linking options:
https://www.mathnet.ru/eng/pjtf5383 https://www.mathnet.ru/eng/pjtf/v45/i14/p52
|
Statistics & downloads: |
Abstract page: | 65 | Full-text PDF : | 35 |
|