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This article is cited in 1 scientific paper (total in 1 paper)
XXII International symposium ''Nanophysics and Nanoelectronics'', Nizhny novgorod, March, 12-15, 2018
Spectroscopy of single AlInAs and (111)-oriented InGaAs quantum dots
I. A. Derebezovab, V. A. Gaislera, A. V. Gaislera, D. V. Dmitrieva, A. I. Toropova, M. Von Helversenc, C. De la Hayec, S. Bounouarc, S. Reitzensteinc a Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
b Siberian State University of Telecommunications and Informatics, Novosibirsk
c Technische Universität Berlin, Institut für
Festkörperphysik Eugene-Wigner-Gebäude,
D-10623 Berlin, Federal Republic of Germany
Abstract:
A system of AlInAs- and InGaAs(111)-based quantum dots is studied. The use of wide-gap Al$_{x}$In$_{1-x}$As alloys as a basis for quantum dots provides a means for substantially extending the spectral region of emission to shorter wavelengths, including the region close to 770 nm which is of interest for the engineering of aerospace systems of quantum cryptography. The fine structure of exciton states in AlInAs and InGaAs(111) quantum dots is studied. It is shown that, for a set of quantum dots, the splitting of exciton states is comparable to the natural width of exciton lines, which is of interest for the engineering of emitters of photon pairs on the basis of these quantum dots.
Keywords:
InGaAs, Quantum Dots (QDs), Exciton States, Polarization-entangled Photon Pairs.
Received: 25.04.2018 Accepted: 07.05.2018
Citation:
I. A. Derebezov, V. A. Gaisler, A. V. Gaisler, D. V. Dmitriev, A. I. Toropov, M. Von Helversen, C. De la Haye, S. Bounouar, S. Reitzenstein, “Spectroscopy of single AlInAs and (111)-oriented InGaAs quantum dots”, Fizika i Tekhnika Poluprovodnikov, 52:11 (2018), 1326–1330; Semiconductors, 52:11 (2018), 1437–1441
Linking options:
https://www.mathnet.ru/eng/phts5690 https://www.mathnet.ru/eng/phts/v52/i11/p1326
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