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Fizika i Tekhnika Poluprovodnikov, 2018, Volume 52, Issue 11, Pages 1326–1330
DOI: https://doi.org/10.21883/FTP.2018.11.46593.15 (Mi phts5690) 		 
This article is cited in 1 scientific paper (total in 1 paper)

XXII International symposium ''Nanophysics and Nanoelectronics'', Nizhny novgorod, March, 12-15, 2018

Spectroscopy of single AlInAs and (111)-oriented InGaAs quantum dots

I. A. Derebezovab, V. A. Gaislera, A. V. Gaislera, D. V. Dmitrieva, A. I. Toropova, M. Von Helversenc, C. De la Hayec, S. Bounouarc, S. Reitzensteinc

a Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
b Siberian State University of Telecommunications and Informatics, Novosibirsk
c Technische Universität Berlin, Institut für Festkörperphysik Eugene-Wigner-Gebäude, D-10623 Berlin, Federal Republic of Germany
Full-text PDF (509 kB) Citations (1)
DOI: https://doi.org/10.21883/FTP.2018.11.46593.15
Abstract: A system of AlInAs- and InGaAs(111)-based quantum dots is studied. The use of wide-gap Al$_{x}$In$_{1-x}$As alloys as a basis for quantum dots provides a means for substantially extending the spectral region of emission to shorter wavelengths, including the region close to 770 nm which is of interest for the engineering of aerospace systems of quantum cryptography. The fine structure of exciton states in AlInAs and InGaAs(111) quantum dots is studied. It is shown that, for a set of quantum dots, the splitting of exciton states is comparable to the natural width of exciton lines, which is of interest for the engineering of emitters of photon pairs on the basis of these quantum dots.
Keywords: InGaAs, Quantum Dots (QDs), Exciton States, Polarization-entangled Photon Pairs.
Funding agency Grant number
Russian Foundation for Basic Research 16-52-12023
Received: 25.04.2018
Accepted: 07.05.2018
English version:
Semiconductors, 2018, Volume 52, Issue 11, Pages 1437–1441
DOI: https://doi.org/10.1134/S1063782618110064
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: I. A. Derebezov, V. A. Gaisler, A. V. Gaisler, D. V. Dmitriev, A. I. Toropov, M. Von Helversen, C. De la Haye, S. Bounouar, S. Reitzenstein, “Spectroscopy of single AlInAs and (111)-oriented InGaAs quantum dots”, Fizika i Tekhnika Poluprovodnikov, 52:11 (2018), 1326–1330; Semiconductors, 52:11 (2018), 1437–1441
Citation in format AMSBIB
\Bibitem{DerGaiGai18}
\by I.~A.~Derebezov, V.~A.~Gaisler, A.~V.~Gaisler, D.~V.~Dmitriev, A.~I.~Toropov, M.~Von Helversen, C.~De la Haye, S.~Bounouar, S.~Reitzenstein
\paper Spectroscopy of single AlInAs and (111)-oriented InGaAs quantum dots
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2018
\vol 52
\issue 11
\pages 1326--1330
\mathnet{http://mi.mathnet.ru/phts5690}
\crossref{https://doi.org/10.21883/FTP.2018.11.46593.15}
\elib{https://elibrary.ru/item.asp?id=36903608}
\transl
\jour Semiconductors
\yr 2018
\vol 52
\issue 11
\pages 1437--1441
\crossref{https://doi.org/10.1134/S1063782618110064}
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    • This publication is cited in the following 1 articles:
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