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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2005, Volume 81, Issue 12, Pages 766–770
(Mi jetpl1779)
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This article is cited in 12 scientific papers (total in 12 papers)
CONDENSED MATTER
Critical phenomena in the β-(2×4) → α-(2×4) reconstruction transition on the (001) GaAs surface
Yu. G. Galitsyn, D. V. Dmitriev, V. G. Mansurov, S. P. Moshchenko, A. I. Toropov A. V. Rzhanov Institute of Semiconductor Physics of SB RAS, Novosibirsk
Abstract:
The critical exponents of the β-(2×4) → α-(2×4) reconstruction phase transition on the (001) GaAs surface are determined experimentally. It is found that the phase transition is analogous to a van der Waals transition. The critical parameters T c , P c , and Θc have been measured experimentally. The mean field theory is applied, and three-parameter isotherms are obtained that agree with the experimental results at the following values of the parameters: E st = 0.36 eV, ΔE = 0.18 eV, and E i = 0.134 eV. Precision measurements of the critical exponents β and δ are carried out. Their values β = 1/8 and δ = 15 indicate that the phase transition is truly two-dimensional.
Received: 24.05.2005
Citation:
Yu. G. Galitsyn, D. V. Dmitriev, V. G. Mansurov, S. P. Moshchenko, A. I. Toropov, “Critical phenomena in the β-(2×4) → α-(2×4) reconstruction transition on the (001) GaAs surface”, Pis'ma v Zh. Èksper. Teoret. Fiz., 81:12 (2005), 766–770; JETP Letters, 81:12 (2005), 629–633
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https://www.mathnet.ru/eng/jetpl1779 https://www.mathnet.ru/eng/jetpl/v81/i12/p766
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