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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2017, Volume 105, Issue 2, Pages 93–99
DOI: https://doi.org/10.7868/S0370274X17020072
(Mi jetpl5169)
 

This article is cited in 5 scientific papers (total in 5 papers)

CONDENSED MATTER

AlInAs quantum dots

A. V. Gaislera, I. A. Derebezova, V. A. Gaislerbca, D. V. Dmitrieva, A. I. Toropova, A. S. Kozhukhova, D. V. Shcheglova, A. V. Latyshevca, A. L. Aseeva

a Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia
b Novosibirsk State Technical University, Novosibirsk, Russia
c Novosibirsk State University, Novosibirsk, Russia
Full-text PDF (906 kB) Citations (5)
References:
Abstract: A system of quantum dots on the basis of Al$_x$In$_{1-x}$As/Al$_y$Ga$_{1-y}$As solid solutions has been studied. The usage of broadband Al$_x$In$_{1-x}$ solid solutions as the basis of quantum dots makes it possible to expand considerably the spectral emission range into the short-wave region, including the wavelength region near 770 nm being of interest for the design of aerospace systems of quantum cryptography. The optical characteristics of single Al$_x$In$_{1-x}$As quantum dots grown according to the Stranski–Krastanov mechanism are studied by the cryogenic microphotoluminescence method. The fine structure of exciton states of quantum dots is studied in the wavelength region near 770 nm. It is shown that the splitting of exciton states is comparable with the natural width of exciton lines, which is of great interest for the design of emitters of pairs of entangled photons on the basis of Al$_x$As$_{1-x}$ quantum dots.
Received: 16.11.2016
Revised: 05.12.2016
English version:
Journal of Experimental and Theoretical Physics Letters, 2017, Volume 105, Issue 2, Pages 103–109
DOI: https://doi.org/10.1134/S0021364017020096
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: A. V. Gaisler, I. A. Derebezov, V. A. Gaisler, D. V. Dmitriev, A. I. Toropov, A. S. Kozhukhov, D. V. Shcheglov, A. V. Latyshev, A. L. Aseev, “AlInAs quantum dots”, Pis'ma v Zh. Èksper. Teoret. Fiz., 105:2 (2017), 93–99; JETP Letters, 105:2 (2017), 103–109
Citation in format AMSBIB
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  • This publication is cited in the following 5 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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