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Zhurnal Tekhnicheskoi Fiziki, 2021, Volume 91, Issue 7, Pages 1158–1163
DOI: https://doi.org/10.21883/JTF.2021.07.50957.347-20 (Mi jtf4977) 		 
This article is cited in 4 scientific papers (total in 4 papers)

Solid-State Electronics

High-power microwave photodiodes based on MBE-grown InAlAs/InGaAs heterostructures

K. S. Zhuravlevab, A. M. Gilinskiia, I. B. Chistokhina, N. A. Valishevaa, D. V. Dmitrieva, A. I. Toropova, M. S. Aksenovab, A. L. Chizhc, K. B. Mikitchukc

a Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
b Novosibirsk State University
c State Scientific and Production Association 'Optics, Optoelectronics and Laser Technology', National Academy of Sciences of Belarus, Minsk
Full-text PDF (626 kB) Citations (4)
DOI: https://doi.org/10.21883/JTF.2021.07.50957.347-20
Abstract: The design and fabrication technology of high-power Schottky-barrier microwave mesa photodiodes from 10 to 40 $\mu$m in diameter back-illuminated through the substrate are described. The diodes were made on MBE-grown InAlAs/InGaAs/InP heterostructures. The operating frequency of photodiodes 10 $\mu$m in diameter has been found to be 40 GHz, and the maximal microwave output at 20 GHz for photodiodes 15 $\mu$m in diameter have been found to reach 58 mW. The coefficient of amplitude-to-phase conversion has been determined to be 1.5 rad/W. This value outperforms the available literature data and makes the given design of photodiodes promising for systems of analog microwave signal generation and transmission, which are very sensitive to phase noise.
Keywords: high power microwave photodiodes, InAlAs/InGaAs heterostructures, Schottky barrier, planar technology.
Funding agency Grant number
Russian Science Foundation 19-72-30023
Russian Foundation for Basic Research 20-52-26013
This study was supported by the Russian Science Foundation (grant no. 19-72- 30023) and the Russian Foundation for Basic Research (grant no. 20-52-26013).
Received: 16.12.2020
Revised: 24.02.2021
Accepted: 01.03.2021
English version:
Technical Physics, 2021, Volume 66, Issue 9, Pages 1072–1077
DOI: https://doi.org/10.1134/S1063784221070185
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: K. S. Zhuravlev, A. M. Gilinskii, I. B. Chistokhin, N. A. Valisheva, D. V. Dmitriev, A. I. Toropov, M. S. Aksenov, A. L. Chizh, K. B. Mikitchuk, “High-power microwave photodiodes based on MBE-grown InAlAs/InGaAs heterostructures”, Zhurnal Tekhnicheskoi Fiziki, 91:7 (2021), 1158–1163; Tech. Phys., 66:9 (2021), 1072–1077
Citation in format AMSBIB
\Bibitem{ZhuGilChi21}
\by K.~S.~Zhuravlev, A.~M.~Gilinskii, I.~B.~Chistokhin, N.~A.~Valisheva, D.~V.~Dmitriev, A.~I.~Toropov, M.~S.~Aksenov, A.~L.~Chizh, K.~B.~Mikitchuk
\paper High-power microwave photodiodes based on MBE-grown InAlAs/InGaAs heterostructures
\jour Zhurnal Tekhnicheskoi Fiziki
\yr 2021
\vol 91
\issue 7
\pages 1158--1163
\mathnet{http://mi.mathnet.ru/jtf4977}
\crossref{https://doi.org/10.21883/JTF.2021.07.50957.347-20}
\elib{https://elibrary.ru/item.asp?id=46470488}
\transl
\jour Tech. Phys.
\yr 2021
\vol 66
\issue 9
\pages 1072--1077
\crossref{https://doi.org/10.1134/S1063784221070185}
\scopus{https://www.scopus.com/record/display.url?origin=inward&eid=2-s2.0-85124379939}
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    Citing articles in Google Scholar: Russian citations, English citations
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