Yu. G. Galitsyn, D. V. Dmitriev, V. G. Mansurov, S. P. Moshchenko, A. I. Toropov, “Asymmetric c(4×4) → γ(2×4) reconstruction phase transition on the (001)GaAs surface”, Pis'ma v Zh. Èksper. Teoret. Fiz., 84:9 (2006), 596–600; JETP Letters, 84:9 (2006), 505

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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2006, Volume 84, Issue 9, Pages 596–600 (Mi jetpl1180)

This article is cited in 9 scientific papers (total in 9 papers)

CONDENSED MATTER

Asymmetric c(4×4) → γ(2×4) reconstruction phase transition on the (001)GaAs surface

Yu. G. Galitsyn, D. V. Dmitriev, V. G. Mansurov, S. P. Moshchenko, A. I. Toropov

Institute of Semiconductor Physics of SB RAS

Full-text PDF (909 kB) Citations (9)

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Abstract: The c(4×4) → γ(2×4) reconstruction phase transition on the (001)GaAs surface is studied experimentally. It is shown that it is a first-order phase transition. The phase transition is found to exhibit a highly asymmetric hysteresis. The difference between the direct and inverse runs of the hysteresis is explained in terms of the mean field theory of an adsorption-induced phase transition by the substantial contribution of lateral multiparticle interactions in the adsorbate.

Received: 26.09.2006

English version:
Journal of Experimental and Theoretical Physics Letters, 2006, Volume 84, Issue 9, Pages 505–508
DOI: https://doi.org/10.1134/S0021364006210089

Bibliographic databases:

Document Type: Article

PACS: 64.60.-i, 68.35.Bs

Language: Russian

Citation: Yu. G. Galitsyn, D. V. Dmitriev, V. G. Mansurov, S. P. Moshchenko, A. I. Toropov, “Asymmetric c(4×4) → γ(2×4) reconstruction phase transition on the (001)GaAs surface”, Pis'ma v Zh. Èksper. Teoret. Fiz., 84:9 (2006), 596–600; JETP Letters, 84:9 (2006), 505–508

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https://www.mathnet.ru/eng/jetpl1180

https://www.mathnet.ru/eng/jetpl/v84/i9/p596

This publication is cited in the following 9 articles:

D S Milakhin, T V Malin, V G Mansurov, Yu G Galitsyn, K S Zhuravlev, J. Phys.: Conf. Ser., 1851:1 (2021), 012005
Ivanov V S., Chernov M.Yu., Solov'ev V.A., Brunkov P.N., Firsov D.D., Kornkov O.S., Prog. Cryst. Growth Charact. Mater., 65:1 (2019), 20–35
S.V. Ivanov, M.Yu. Chernov, V.A. Solov'ev, P.N. Brunkov, D.D. Firsov, O.S. Komkov, Progress in Crystal Growth and Characterization of Materials, 65:1 (2019), 20
Solov'ev V.A., Chernov M.Yu., Sitnikova A.A., Brunkov P.N., Meltser B.Ya., Ivanov S.V., Semiconductors, 52:1 (2018), 120–125
Konfederatova K.A. Mansurov V.G. Malin T.V. Galitsyn Yu.G. Aleksandrov I.A. Vdovin V.I. Zhuravlev K.S., J. Therm. Anal. Calorim., 133:2 (2018), 1181–1187
Bakarov A. Galitsyn Yu. Mansurov V. Zhuravlev K., J. Cryst. Growth, 457:SI (2017), 207–210
Galitsyn Yu.G., Lyamkina A.A., Moschenko S.P., Dmitriev D.V., Toropov A.I., Ernesto P., Mikhailov Yu.I., Doklady akademii nauk vysshei shkoly rossiiskoi federatsii, 2012, no. 2, 27–33
Yu. G. Galitsyn, A. A. Lyamkina, S. P. Moshchenko, T. S. Shamirzaev, K. S. Zhuravlev, A. I. Toropov, Self-Assembly of Nanostructures, 2012, 127
JETP Letters, 86:7 (2007), 482–486

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