Asymmetric c(4×4) → γ(2×4) reconstruction phase transition on the (001)GaAs surface

The c(4×4) → γ(2×4) reconstruction phase transition on the (001)GaAs surface is studied experimentally. It is shown that it is a first-order phase transition. The phase transition is found to exhibit a highly asymmetric hysteresis. The difference between the direct and inverse runs of the hysteresis is explained in terms of the mean field theory of an adsorption-induced phase transition by the substantial contribution of lateral multiparticle interactions in the adsorbate.